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Current approaches rely on external fields or complex heterogeneous stacking to break crystalline symmetries, which hinders scalable device integration. In this work, we demonstrate surface premelting engineering to create wafer-scale low-symmetry graphene on germanium-110 [Ge(110)]. Controlled premelting forms striped germanium surface patterns that reduce graphene symmetry from\n                    <jats:italic toggle=\"yes\">D<\/jats:italic>\n                    <jats:sub>6h<\/jats:sub>\n                    to\n                    <jats:italic toggle=\"yes\">C<\/jats:italic>\n                    <jats:sub>1v<\/jats:sub>\n                    , producing a room-temperature nonlinear Hall conductivity of ~11 micrometers per volt per ohm. First-principles calculations attribute this to originating from overtilted massive Dirac cones of hybridized germanium bands and the graphene Dirac cone. Integrated nonlinear Hall rectifiers generate &gt;20 millivolts of output from radio frequency input and drive commercial voltage boosters and light-emitting diodes, establishing a complementary metal-oxide semiconductor\u2013compatible route toward wafer-scale nonlinear quantum devices.\n                  <\/jats:p>","DOI":"10.1126\/science.aeh3915","type":"journal-article","created":{"date-parts":[[2026,10,8]],"date-time":"2026-10-08T18:00:31Z","timestamp":1791482431000},"page":"222-227","update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark","source":"Crossref","is-referenced-by-count":0,"title":["Wafer-scale low-symmetry graphene moir\u00e9 superlattice for integrated quantum rectifiers"],"prefix":"10.1126","volume":"394","author":[{"ORCID":"https:\/\/orcid.org\/0009-0005-8584-9007","authenticated-orcid":true,"given":"Wenhao","family":"Tan","sequence":"first","affiliation":[{"name":"State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem 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