{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,22]],"date-time":"2026-04-22T01:25:21Z","timestamp":1776821121617,"version":"3.51.2"},"reference-count":34,"publisher":"American Association for the Advancement of Science (AAAS)","issue":"6071","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Science"],"published-print":{"date-parts":[[2012,2,24]]},"abstract":"<jats:title>Tunnel Barriers for Graphene Transistors<\/jats:title>\n          <jats:p>\n            Transistor operation for integrated circuits not only requires that the gate material has high-charge carrier mobility, but that there is also an effective way of creating a barrier to current flow so that the device can be switched off and not waste power. Graphene offers high carrier mobility, but the shape of its conduction and valence bands enables electron tunneling and makes it difficult to achieve low currents in an \u201coff\u201d state.\n            <jats:bold>\n              Britnell\n              <jats:italic>et al.<\/jats:italic>\n            <\/jats:bold>\n            (p.\n            <jats:related-article xmlns:xlink=\"http:\/\/www.w3.org\/1999\/xlink\" ext-link-type=\"doi\" page=\"947\" related-article-type=\"in-this-issue\" vol=\"335\" xlink:href=\"10.1126\/science.1218461\">947<\/jats:related-article>\n            , published online 2 February) have fabricated field-effect transistors in which a thin tunneling barrier created from a layered material\u2014either hexagonal boron nitride or molybdenum disulfide\u2014is sandwiched between graphene sheets. These devices exhibit on-off switching ratios of \u224850 and \u224810,000, respectively, at room temperature.\n          <\/jats:p>","DOI":"10.1126\/science.1218461","type":"journal-article","created":{"date-parts":[[2012,2,3]],"date-time":"2012-02-03T06:42:04Z","timestamp":1328251324000},"page":"947-950","source":"Crossref","is-referenced-by-count":2377,"title":["Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures"],"prefix":"10.1126","volume":"335","author":[{"given":"L.","family":"Britnell","sequence":"first","affiliation":[{"name":"School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK."}]},{"given":"R. V.","family":"Gorbachev","sequence":"additional","affiliation":[{"name":"Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, UK."}]},{"given":"R.","family":"Jalil","sequence":"additional","affiliation":[{"name":"Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, UK."}]},{"given":"B. D.","family":"Belle","sequence":"additional","affiliation":[{"name":"Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, UK."}]},{"given":"F.","family":"Schedin","sequence":"additional","affiliation":[{"name":"Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, UK."}]},{"given":"A.","family":"Mishchenko","sequence":"additional","affiliation":[{"name":"School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK."}]},{"given":"T.","family":"Georgiou","sequence":"additional","affiliation":[{"name":"School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK."}]},{"given":"M. I.","family":"Katsnelson","sequence":"additional","affiliation":[{"name":"Institute for Molecules and Materials, Radboud University of Nijmegen, 6525 AJ Nijmegen, Netherlands."}]},{"given":"L.","family":"Eaves","sequence":"additional","affiliation":[{"name":"School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK."}]},{"given":"S. V.","family":"Morozov","sequence":"additional","affiliation":[{"name":"Institute for Microelectronics Technology, 142432 Chernogolovka, Russia."}]},{"given":"N. M. R.","family":"Peres","sequence":"additional","affiliation":[{"name":"Departamento de F\u00edsica, Universidade do Minho, P-4710-057, Braga, Portugal."},{"name":"Graphene Research Centre and Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore."}]},{"given":"J.","family":"Leist","sequence":"additional","affiliation":[{"name":"Momentive Performance Materials, 22557 West Lunn Road, Strongsville, OH 44070, USA."}]},{"given":"A. 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