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Antiferroelectrics are promising for energy storage, solid-state cooling, and memory technologies; however, these materials are scarce, and their scalability remains largely unexplored. In this work, we demonstrated that single-crystalline hafnia, a lead-free complementary metal-oxide semiconductor (CMOS)\u2013compatible material, exhibits antiferroelectricity under compressive-strain conditions. We observed antiparallel sublattice polarization and stable double hysteresis in single-crystalline (111)-oriented epitaxial lanthanum (La)\u2013doped hafnia films grown on yttrium-stabilized zirconia and showed that the antipolar orthorhombic phase of hafnia adheres to the Kittel model of antiferroelectricity. Compressive strain strengthens the orthorhombic order in thinner La-doped hafnia films, achieving a very high ordering temperature of 850\u00b0C in the two-dimensional limit, highlighting hafnia\u2019s potential for advanced antiferroelectric devices.<\/jats:p>","DOI":"10.1126\/science.ady5526","type":"journal-article","created":{"date-parts":[[2026,9,24]],"date-time":"2026-09-24T18:04:06Z","timestamp":1790273046000},"page":"763-767","update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark","source":"Crossref","is-referenced-by-count":1,"title":["Antiferroelectric hafnia down to the 2D limit"],"prefix":"10.1126","volume":"394","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7996-8430","authenticated-orcid":true,"given":"Xin","family":"Li","sequence":"first","affiliation":[{"name":"Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 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