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On-demand substitution of the lattice chalcogens is therefore an efficient route to tuning TMDC electronic phases. Here, we custom-molded van der Waals (vdW) heterostructures by layer-by-layer vapor-phase chalcogen substitution starting from\n                    <jats:italic toggle=\"yes\">p<\/jats:italic>\n                    -type WSe\n                    <jats:sub>2<\/jats:sub>\n                    multilayers into which we locally inscribed insulating WO\n                    <jats:italic toggle=\"yes\">\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    ,\n                    <jats:italic toggle=\"yes\">n<\/jats:italic>\n                    -type WS\n                    <jats:sub>2<\/jats:sub>\n                    , and semimetallic WTe\n                    <jats:sub>2<\/jats:sub>\n                    . This spatially precise conversion seamlessly integrated distinct electronic phases, both vertically and laterally, into modular vdW semiconductor heterostructures that are otherwise inaccessible. As a demonstration, we integrated WO\n                    <jats:italic toggle=\"yes\">\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    \/WSe\n                    <jats:sub>2<\/jats:sub>\n                    local gate stacks to build ultrascaled metal oxide\u2013semiconductor field effect transistors (MOSFETs), achieving an unprecedented subthreshold swing at subnanometer equivalent oxide thickness.\n                  <\/jats:p>","DOI":"10.1126\/science.aei2693","type":"journal-article","created":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T18:03:06Z","timestamp":1792087386000},"page":"340-346","update-policy":"https:\/\/doi.org\/10.34133\/aaas_crossmark","source":"Crossref","is-referenced-by-count":1,"title":["Modular van der Waals MOSFETs through layer-by-layer chalcogen 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