{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,4]],"date-time":"2022-04-04T23:58:16Z","timestamp":1649116696467},"reference-count":28,"publisher":"World Scientific Pub Co Pte Lt","issue":"05","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2007,10]]},"abstract":"<jats:p> Propagation characteristics, including scattering, dispersion, and loss modeling, of some microstrip lines (MTLs) with defected ground structure (DGS) slots were investigated in this paper. A simple approach was firstly introduced to calculate the slow-wave factors (SWF) of these MTLs with DGS. Based on the above-mentioned theory, a meander MTL structure with periodic DGS slots was proposed and analyzed. The improved SWF and characteristic impedances have been demonstrated, while the bandgap performances have been proved by experimental results. Further, a type of nonuniform DGS slots, which are composed of dual-periodic photonic bandgap structures, was applied to reduce the second-order harmonics and improve the output power of a Ku-band voltage-controlled oscillator. Measurements showed that the second-order harmonics are suppressed by more than - 20 dB and the output power is improved by 3\u20135%. <\/jats:p>","DOI":"10.1142\/s0218126607003952","type":"journal-article","created":{"date-parts":[[2008,3,25]],"date-time":"2008-03-25T12:05:59Z","timestamp":1206446759000},"page":"731-743","source":"Crossref","is-referenced-by-count":0,"title":["PROPAGATION CHARACTERISTICS OF MICROSTRIP LINES (MTLs) WITH DEFECTED GROUND STRUCTURE SLOTS: THEORY AND APPLICATION"],"prefix":"10.1142","volume":"16","author":[{"given":"HAIWEN","family":"LIU","sequence":"first","affiliation":[{"name":"State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu 61029, China"}]},{"given":"LINGLING","family":"SUN","sequence":"additional","affiliation":[{"name":"Microelectronic CAD Center, Hangzhou Dianzi University, Hangzhou 310018, China"}]},{"given":"ZHENGFAN","family":"LI","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, Shanghai Jiaotong University, Shanghai 200030, China"}]},{"given":"XIAOWEI","family":"SUN","sequence":"additional","affiliation":[{"name":"Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China"}]}],"member":"219","published-online":{"date-parts":[[2011,11,21]]},"reference":[{"key":"rf1","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.1960.1124658"},{"key":"rf2","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.1983.1131543"},{"key":"rf3","doi-asserted-by":"publisher","DOI":"10.1109\/75.658644"},{"key":"rf4","doi-asserted-by":"publisher","DOI":"10.1109\/TAP.2002.1003380"},{"key":"rf5","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2002.802338"},{"key":"rf6","doi-asserted-by":"publisher","DOI":"10.1109\/TAP.2003.817566"},{"key":"rf7","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2003.821273"},{"key":"rf9","doi-asserted-by":"publisher","DOI":"10.1109\/22.899965"},{"key":"rf10","first-page":"1426","volume":"52","author":"Chung Y.","journal-title":"IEEE Trans. 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