{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,4,23]],"date-time":"2024-04-23T05:10:02Z","timestamp":1713849002660},"reference-count":11,"publisher":"World Scientific Pub Co Pte Lt","issue":"10","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2013,12]]},"abstract":"<jats:p> This paper provides an audio 2-1 cascaded \u03a3\u0394 modulator using a novel gain-boost class-C inverter. The gain-boost class-C inverter behaves as a subthreshold amplifier. By introducing a gain-boost module, the inverter DC-gain is increased from 48 dB to 67 dB. The gain-boost class-C inverter consumes 57 \u03bcW at 1.2-V supply, where the gain-boost module consumes only 3 \u03bcW. In addition, an on-chip body bias technique is introduced to compensate the process and supply voltage variations of the class-C inverter. The proposed inverter-based \u03a3\u0394 modulator chip is implemented in 0.13-\u03bcm CMOS process, and achieves 86-dB peak-signal to noise and distortion ratio (SNDR) and 90-dB dynamic range (DR) over 22.05-KHz bandwidth at 1.2-V supply consuming 360 \u03bcW, which demonstrates that the gain-boost class-C inverter is particularly suitable for micro-power high-resolution applications. <\/jats:p>","DOI":"10.1142\/s0218126613400240","type":"journal-article","created":{"date-parts":[[2013,11,4]],"date-time":"2013-11-04T23:19:42Z","timestamp":1383607182000},"page":"1340024","source":"Crossref","is-referenced-by-count":1,"title":["A \u03a3\u0394 MODULATOR USING GAIN-BOOST CLASS-C INVERTER FOR AUDIO APPLICATIONS"],"prefix":"10.1142","volume":"22","author":[{"given":"HAO","family":"LUO","sequence":"first","affiliation":[{"name":"Institute of Microelectronics and Photoelectronics, Zhejiang University, No. 38, Zheda Road, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"YAN","family":"HAN","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics and Photoelectronics, Zhejiang University, No. 38, Zheda Road, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"RAY C. C.","family":"CHEUNG","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, City University of Hong Kong, Hong Kong 999077, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"TIANLIN","family":"CAO","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics and Photoelectronics, Zhejiang University, No. 38, Zheda Road, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"XIAOPENG","family":"LIU","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics and Photoelectronics, Zhejiang University, No. 38, Zheda Road, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"FENG","family":"GAO","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics and Photoelectronics, Zhejiang University, No. 38, Zheda Road, Hangzhou 310027, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2014,1]]},"reference":[{"key":"rf1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2008.2010973"},{"key":"rf2","doi-asserted-by":"publisher","DOI":"10.1049\/el:20062718"},{"key":"rf3","doi-asserted-by":"crossref","unstructured":"S. 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