{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,3]],"date-time":"2022-04-03T12:15:39Z","timestamp":1648988139643},"reference-count":9,"publisher":"World Scientific Pub Co Pte Lt","issue":"10","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2013,12]]},"abstract":"<jats:p> A novel silicon-on-insulator (SOI) high voltage device with a composite dielectric buried layer (CD SOI) is proposed in this paper. In the proposed structure, the composite dielectric buried layer consists of Si <jats:sub>3<\/jats:sub> N <jats:sub>4<\/jats:sub> dielectric and low-k (relative permittivity) dielectric. The electric field strength in the buried layer is enhanced by the low-k dielectric. The Si <jats:sub>3<\/jats:sub> N <jats:sub>4<\/jats:sub> dielectric in the buried layer not only modulates the electric field distribution in the drift region, but also provides a heat conduction path for the SOI layer and alleviates the self-heating effect (SHE). The breakdown voltage (BV) = 362 V for CD SOI is obtained by simulation on a 1 \u03bcm SOI layer over 2 \u03bcm buried layer, which is enhanced by 26% compared with that of conventional SOI. <\/jats:p>","DOI":"10.1142\/s021812661340029x","type":"journal-article","created":{"date-parts":[[2013,11,18]],"date-time":"2013-11-18T03:22:33Z","timestamp":1384744953000},"page":"1340029","source":"Crossref","is-referenced-by-count":0,"title":["NOVEL HIGH VOLTAGE SILICON-ON-INSULATOR DEVICE WITH COMPOSITE DIELECTRIC BURIED LAYER"],"prefix":"10.1142","volume":"22","author":[{"given":"JIE","family":"FAN","sequence":"first","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China"}]},{"given":"XIAORONG","family":"LUO","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China"}]},{"given":"BO","family":"ZHANG","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China"}]},{"given":"ZHAOJI","family":"LI","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China"}]}],"member":"219","published-online":{"date-parts":[[2014,1]]},"reference":[{"key":"rf2","doi-asserted-by":"publisher","DOI":"10.1109\/16.760414"},{"key":"rf5","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2007307"},{"key":"rf6","doi-asserted-by":"publisher","DOI":"10.1080\/00207217.2011.576598"},{"key":"rf7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.924048"},{"key":"rf8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2028405"},{"key":"rf9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2037372"},{"key":"rf10","first-page":"594","volume":"31","author":"Luo X.","journal-title":"IEEE Electron Dev. Lett."},{"key":"rf11","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2007.01.034"},{"key":"rf12","first-page":"1832","volume":"27","author":"Xiaorong L.","journal-title":"J. Semiconduct."}],"container-title":["Journal of Circuits, Systems and Computers"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S021812661340029X","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,8,6]],"date-time":"2019-08-06T21:18:28Z","timestamp":1565126308000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/abs\/10.1142\/S021812661340029X"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,12]]},"references-count":9,"journal-issue":{"issue":"10","published-online":{"date-parts":[[2014,1]]},"published-print":{"date-parts":[[2013,12]]}},"alternative-id":["10.1142\/S021812661340029X"],"URL":"https:\/\/doi.org\/10.1142\/s021812661340029x","relation":{},"ISSN":["0218-1266","1793-6454"],"issn-type":[{"value":"0218-1266","type":"print"},{"value":"1793-6454","type":"electronic"}],"subject":[],"published":{"date-parts":[[2013,12]]}}}