{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,6]],"date-time":"2022-04-06T00:35:11Z","timestamp":1649205311138},"reference-count":13,"publisher":"World Scientific Pub Co Pte Lt","issue":"03","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2014,3]]},"abstract":"<jats:p> This paper proposes a novel second-order temperature-compensated CMOS current reference which exploits a new self-biased current source for first-order temperature compensation and a resistor-free widlar current mirror for second-order temperature compensation. Moreover, by deriving the temperature coefficient (TC) of the reference current, the temperature compensation condition equations together with a design method of minimizing the thermal drift in a required temperature range are presented. Based on these, the circuit is designed in a standard 0.18 \u03bcm CMOS process and achieves a very low TC of only 16.9 ppm\/\u00b0C in a temperature range between -40\u00b0C and 120\u00b0C, with 1 \u03bcA reference current at 27\u00b0C. Besides, the current reference can operate at supply voltage down to 1.3 V, with a good supply regulation of 0.5%\/V. At 27\u00b0C, its power consumption is 8.93 \u03bcW. <\/jats:p>","DOI":"10.1142\/s021812661450042x","type":"journal-article","created":{"date-parts":[[2013,12,19]],"date-time":"2013-12-19T07:22:19Z","timestamp":1387437739000},"page":"1450042","source":"Crossref","is-referenced-by-count":3,"title":["A VERY LOW-TC SECOND-ORDER TEMPERATURE-COMPENSATED CMOS CURRENT REFERENCE"],"prefix":"10.1142","volume":"23","author":[{"given":"LIANG","family":"LIANG","sequence":"first","affiliation":[{"name":"School of Microelectronics, Xidian University, No. 2 South Taibai Road, Xi'an 710071, China"}]},{"given":"ZHANGMING","family":"ZHU","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University, No. 2 South Taibai Road, Xi'an 710071, China"}]},{"given":"YINTANG","family":"YANG","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University, No. 2 South Taibai Road, Xi'an 710071, China"}]}],"member":"219","published-online":{"date-parts":[[2014,3,2]]},"reference":[{"key":"rf1","doi-asserted-by":"publisher","DOI":"10.1109\/4.324"},{"key":"rf2","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2007.900176"},{"key":"rf3","doi-asserted-by":"crossref","first-page":"1132","DOI":"10.1109\/4.597305","volume":"32","author":"Oguey H. J.","journal-title":"IEEE J. Solid-State Circuits"},{"key":"rf4","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2004.842059"},{"key":"rf6","doi-asserted-by":"publisher","DOI":"10.1049\/el:20030163"},{"key":"rf7","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.914336"},{"key":"rf8","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2010.2056051"},{"key":"rf9","first-page":"1422","volume":"25","author":"Yoo C.","journal-title":"Electron. Lett."},{"key":"rf10","doi-asserted-by":"publisher","DOI":"10.1049\/el:19960827"},{"key":"rf12","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2005.852529"},{"key":"rf13","volume-title":"MOSFET Modeling and BSIM3 User's Guide","author":"Cheng Y.","year":"1999"},{"key":"rf14","doi-asserted-by":"publisher","DOI":"10.1017\/CBO9781139195065"},{"key":"rf15","doi-asserted-by":"publisher","DOI":"10.1049\/iet-cds:20050373"}],"container-title":["Journal of Circuits, Systems and Computers"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S021812661450042X","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,8,7]],"date-time":"2019-08-07T00:23:33Z","timestamp":1565137413000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/abs\/10.1142\/S021812661450042X"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2014,3]]},"references-count":13,"journal-issue":{"issue":"03","published-online":{"date-parts":[[2014,3,2]]},"published-print":{"date-parts":[[2014,3]]}},"alternative-id":["10.1142\/S021812661450042X"],"URL":"https:\/\/doi.org\/10.1142\/s021812661450042x","relation":{},"ISSN":["0218-1266","1793-6454"],"issn-type":[{"value":"0218-1266","type":"print"},{"value":"1793-6454","type":"electronic"}],"subject":[],"published":{"date-parts":[[2014,3]]}}}