{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,13]],"date-time":"2026-03-13T12:59:09Z","timestamp":1773406749961,"version":"3.50.1"},"reference-count":24,"publisher":"World Scientific Pub Co Pte Lt","issue":"09","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2014,10]]},"abstract":"<jats:p> In this paper, a variable threshold voltage metal oxide semiconductor (VTMOS) field effect transistor is used to improve an ultra-low voltage, ultra-low power current conveyor transconductance amplifier (CCTA). To achieve the desired result, an analytical subthreshold VTMOS model is used. Designs that utilize the TSMC 0.18 \u03bcm technology are verified using PSPICE simulation. The power consumption is simply 0.12 \u03bcW at a \u00b1 0.2 V supply voltage. The proposed CCTA is synthesized using fractional-order (FO) universal filters that can simultaneously realise low pass (LP), high pass (HP) and bandpass (BP) responses with independent control of quality factor and pole frequency by transconductances (g<jats:sub>m<\/jats:sub>). Moreover, the circuit has low input and high output impedance which would be an ideal choice for cascading in current-mode circuit. The FO filters are constructed using two FO capacitors of orders \u03b1 and \u03b2 (0 &lt; \u03b1, \u03b2 \u2264 1). The FO filters provide improved performance in terms of pole frequency compared with conventional-order filters. The filter has a low power consumption of 0.71 \u03bcW at a \u00b1 0.2 V supply voltage. The validity of the proposed filter is verified through PSPICE simulations. <\/jats:p>","DOI":"10.1142\/s0218126614501266","type":"journal-article","created":{"date-parts":[[2014,7,7]],"date-time":"2014-07-07T08:16:18Z","timestamp":1404720978000},"page":"1450126","source":"Crossref","is-referenced-by-count":6,"title":["A \u00b1 0.2 V, 0.12 \u03bcW CCTA USING VTMOS AND AN APPLICATION FRACTIONAL-ORDER UNIVERSAL FILTER"],"prefix":"10.1142","volume":"23","author":[{"given":"TADA","family":"COMEDANG","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, Pathumwan Institute of Technology, 833 Rama 1 Road, Bangkok, Thailand"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"PATTNA","family":"INTANI","sequence":"additional","affiliation":[{"name":"Electric and Energy Research (EER), Pathumwan Institute of Technology, 833 Rama 1 Road, Bangkok, Thailand"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2014,8,25]]},"reference":[{"key":"rf2","doi-asserted-by":"publisher","DOI":"10.7763\/IJCEE.2009.V1.48"},{"key":"rf3","first-page":"317","volume":"20","author":"Sotner R.","year":"2011","journal-title":"Radioengineering"},{"key":"rf4","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126611007104"},{"key":"rf5","first-page":"415","volume":"22","author":"Khateb F.","year":"2013","journal-title":"Radioengineering"},{"key":"rf6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1996.542322"},{"key":"rf8","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.40.2854"},{"key":"rf10","doi-asserted-by":"publisher","DOI":"10.1007\/s10470-007-9096-y"},{"key":"rf11","doi-asserted-by":"publisher","DOI":"10.1002\/cta.453"},{"key":"rf12","doi-asserted-by":"publisher","DOI":"10.1016\/j.sigpro.2010.06.022"},{"key":"rf13","doi-asserted-by":"publisher","DOI":"10.1007\/s00034-012-9539-2"},{"key":"rf14","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126608004691"},{"key":"rf15","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126609004995"},{"key":"rf17","doi-asserted-by":"publisher","DOI":"10.1007\/s00034-012-9432-z"},{"key":"rf20","first-page":"15","volume":"17","author":"Biolek D.","year":"2008","journal-title":"Radioengineering"},{"key":"rf23","doi-asserted-by":"crossref","unstructured":"G.\u00a0Palumbo, S.\u00a0Palmisano and S.\u00a0Pennisi, CMOS Current Amplifiers (Kluwer Academic Publishers, Boston, 1999)\u00a0pp. 45\u201397.","DOI":"10.1007\/978-1-4615-5135-5_2"},{"key":"rf24","first-page":"458","volume":"22","author":"Uygur A.","year":"2013","journal-title":"Radioengineering"},{"key":"rf25","first-page":"231","volume":"12","author":"Vittoz E. 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