{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,14]],"date-time":"2026-02-14T13:19:36Z","timestamp":1771075176574,"version":"3.50.1"},"reference-count":4,"publisher":"World Scientific Pub Co Pte Lt","issue":"03","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2015,3]]},"abstract":"<jats:p> This paper presents a new bootstrapped switch with high speed and low nonlinear distortion. Instead of fixed voltage, the gate-to-source voltage of switch varies with input to implement first-order body effect compensation. Post-layout simulations have been done in standard 0.18-\u03bcm CMOS process at 1.8 V, and results indicate that at 200 MHz sample rate, a peak signal-to-noise-and-distortion ratio (SNDR) of 98.4 dB, spurious-free dynamic range (SFDR) of 105.7 dB and total harmonic distortion (THD) of -104.9 dB can be acquired. For input frequency up to the 60 MHz frequency, proposed structure maintains |THD| over 85 dB, SFDR better than 86 dB, respectively. <\/jats:p>","DOI":"10.1142\/s0218126615500322","type":"journal-article","created":{"date-parts":[[2014,11,30]],"date-time":"2014-11-30T21:31:52Z","timestamp":1417383112000},"page":"1550032","source":"Crossref","is-referenced-by-count":5,"title":["A High Linear CMOS Body Effect Compensation Bootstrapped Switch"],"prefix":"10.1142","volume":"24","author":[{"given":"Siwan","family":"Dong","sequence":"first","affiliation":[{"name":"School of Microelectronics, Xidian University, No. 2 Taibai Road, Xi'an 710071, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Minjie","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University, No. 2 Taibai Road, Xi'an 710071, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhangming","family":"Zhu","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University, No. 2 Taibai Road, Xi'an 710071, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yintang","family":"Yang","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University, No. 2 Taibai Road, Xi'an 710071, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2015,2,10]]},"reference":[{"key":"rf1","doi-asserted-by":"publisher","DOI":"10.1049\/el.2011.0547"},{"key":"rf8","doi-asserted-by":"publisher","DOI":"10.1587\/elex.8.189"},{"key":"rf9","doi-asserted-by":"publisher","DOI":"10.1049\/iet-cds.2008.0354"},{"key":"rf10","volume":"22","author":"Zhu Z.","year":"2013","journal-title":"J. Circuits Syst. Comput."}],"container-title":["Journal of Circuits, Systems and Computers"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S0218126615500322","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,8,7]],"date-time":"2019-08-07T00:51:26Z","timestamp":1565139086000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/abs\/10.1142\/S0218126615500322"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,2,10]]},"references-count":4,"journal-issue":{"issue":"03","published-online":{"date-parts":[[2015,2,10]]},"published-print":{"date-parts":[[2015,3]]}},"alternative-id":["10.1142\/S0218126615500322"],"URL":"https:\/\/doi.org\/10.1142\/s0218126615500322","relation":{},"ISSN":["0218-1266","1793-6454"],"issn-type":[{"value":"0218-1266","type":"print"},{"value":"1793-6454","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,2,10]]}}}