{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,1]],"date-time":"2022-04-01T20:45:33Z","timestamp":1648845933281},"reference-count":21,"publisher":"World Scientific Pub Co Pte Lt","issue":"04","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2015,4]]},"abstract":"<jats:p> This paper presents the design of C-CNTFET oscillator's arrays for infrared 'IR' technology. These arrays are contained by both of the LC-tank and the voltage control 'coupled N- and P-type C-CNTFET LC-tank' oscillators. In this paper, the analysis of the impact of CNT diameter variations and the nonlinear capacitances (C<jats:sub> GD <\/jats:sub> and C<jats:sub> GS <\/jats:sub>) were introduced, especially on propagation time, oscillation frequency and power consumption. The C-CNTFET inverter, ring oscillator, LC-tank and coupled N- and P-type C-CNTFET LC-tank oscillator structures were designed and their speeding and performances have been investigated with the proposed n-type of C-CNTFET model supplied by a 0.5 V power voltage. Simulation results show that the n- and p-types LC-tank oscillator circuit designs achieved an approximately equal oscillation frequency, response time and power consumption. Whereas the coupled N- and P-type C-CNTFET LC-tank oscillator has the lowest power consumption equal to 0.13 \u03bcW, the highest oscillation frequency (10.08 THz) and the fastest response time (1.81 ps). <\/jats:p>","DOI":"10.1142\/s021812661550053x","type":"journal-article","created":{"date-parts":[[2015,1,26]],"date-time":"2015-01-26T02:29:09Z","timestamp":1422239349000},"page":"1550053","source":"Crossref","is-referenced-by-count":0,"title":["Infrared Oscillators in Conventional Carbon Nanotube FET Technology"],"prefix":"10.1142","volume":"24","author":[{"given":"Lobna","family":"I'msaddak","sequence":"first","affiliation":[{"name":"University Laboratory LETI-ENIS, University of Sfax, ENIS, Street of Soukra 3Km, BP.3038, Sfax, Tunisia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dalenda","family":"Ben Issa","sequence":"additional","affiliation":[{"name":"University Laboratory LETI-ENIS, University of Sfax, ENIS, Street of Soukra 3Km, BP.3038, Sfax, Tunisia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Abdennaceur","family":"Kachouri","sequence":"additional","affiliation":[{"name":"University Laboratory LETI-ENIS, University of Sfax, ENIS, Street of Soukra 3Km, BP.3038, Sfax, Tunisia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mounir","family":"Samet","sequence":"additional","affiliation":[{"name":"University Laboratory LETI-ENIS, University of Sfax, ENIS, Street of Soukra 3Km, BP.3038, Sfax, Tunisia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hekmet","family":"Samet","sequence":"additional","affiliation":[{"name":"University Laboratory LETI-ENIS, University of Sfax, ENIS, Street of Soukra 3Km, BP.3038, Sfax, Tunisia"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2015,3,4]]},"reference":[{"key":"rf1","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2004.835135"},{"key":"rf3","volume-title":"Advances in Design and Specification Languages for Embedded Systems","author":"Pregaldiny F.","year":"2007"},{"key":"rf4","first-page":"2496","volume":"6","author":"Marani R.","year":"2014","journal-title":"Int. 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