{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,25]],"date-time":"2025-10-25T19:03:23Z","timestamp":1761419003283},"reference-count":19,"publisher":"World Scientific Pub Co Pte Lt","issue":"04","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2016,4]]},"abstract":"<jats:p> In this paper, the simplest possible electronically adjustable transresistance-mode (TRM) instrumentation amplifier (IA) using only eight MOS transistors is presented. Extremely simple structure of the proposed IA leads to a wide bandwidth and robust performance against mismatches and parasitic capacitances. Of more interest is that the differential-mode gain of the proposed IA can be electronically varied by control voltages. Post-layout and pre-layout simulation results based on 0.18[Formula: see text][Formula: see text]m TSMC CMOS parameters are included to confirm the validity of the theoretical analysis. Despite extremely simple structure, its input and output impedances are 1.93 and 1.68[Formula: see text]k[Formula: see text], respectively. Time domain analysis shows that for an input signal of 20[Formula: see text][Formula: see text]A peak to peak, maximum value of THD is 4.5% for different frequencies. Monte Carlo simulation is also carried out, which proves robust performance of the proposed IA against mismatches. The required chip area is only [Formula: see text]. <\/jats:p>","DOI":"10.1142\/s0218126616500225","type":"journal-article","created":{"date-parts":[[2015,11,2]],"date-time":"2015-11-02T06:32:23Z","timestamp":1446445943000},"page":"1650022","source":"Crossref","is-referenced-by-count":18,"title":["A New Transresistance-Mode Instrumentation Amplifier with Low Number of MOS Transistors and Electronic Tuning Opportunity"],"prefix":"10.1142","volume":"25","author":[{"given":"Leila","family":"Safari","sequence":"first","affiliation":[{"name":"Department of Electrical and Electronics Engineering, Iran University of Science and Technology, Tehran, Iran"}]},{"given":"Erkan","family":"Yuce","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronics Engineering, Pamukkale University, 20070 Kinikli-Denizli, Turkey"}]},{"given":"Shahram","family":"Minaei","sequence":"additional","affiliation":[{"name":"Department of Electronics and Communications Engineering, Dogus University, Acibadem, 34722 Kadikoy, Istanbul, Turkey"}]}],"member":"219","published-online":{"date-parts":[[2016,2,2]]},"reference":[{"key":"S0218126616500225BIB001","volume-title":"A Designers Guide to Instrumentation Amplifier","author":"Kitchin C.","year":"2006","edition":"3"},{"key":"S0218126616500225BIB002","volume-title":"Microelectronic Circuits","author":"Sedra A. 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