{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,3,31]],"date-time":"2022-03-31T04:07:16Z","timestamp":1648699636625},"reference-count":11,"publisher":"World Scientific Pub Co Pte Lt","issue":"06","funder":[{"name":"the National Basic Research Program of China","award":["2010CB327505"],"award-info":[{"award-number":["2010CB327505"]}]},{"name":"the Advance Research project of China","award":["51308xxxx06"],"award-info":[{"award-number":["51308xxxx06"]}]},{"name":"the Doctoral Scientific Research Foundation of Henan University of Science and Technology","award":["400613480011"],"award-info":[{"award-number":["400613480011"]}]},{"name":"the Foundation of He'nan Educational Committee","award":["15A510001"],"award-info":[{"award-number":["15A510001"]}]},{"name":"the International Science and Technology Cooperation Program of Henan Province","award":["144300510037"],"award-info":[{"award-number":["144300510037"]}]},{"name":"the Foundation of He'nan Educational Committee","award":["14A510003"],"award-info":[{"award-number":["14A510003"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2016,6]]},"abstract":"<jats:p> In this paper, a fully integrated Ku-band voltage controlled oscillator (VCO) with low phase noise is presented in a GaAs heterojunction bipolar transistor (HBT) technology. A cross-coupled configuration is employed to achieve low phase noise, and to achieve high output power, the largest HBT and higher bias current are adopted. The implemented VCO demonstrates that the oscillation frequency is from 13.77[Formula: see text]GHz to 14.8[Formula: see text]GHz, with a maximum 4.83[Formula: see text]dBm output power at 13.77[Formula: see text]GHz. The phase noise of the VCO is [Formula: see text]100.2[Formula: see text]dBc\/Hz at 1[Formula: see text]MHz offset from 14.36[Formula: see text]GHz oscillation frequency. The VCO consumes 61.2[Formula: see text]mW from 6[Formula: see text]V supply and occupies an area of 0.51[Formula: see text]mm[Formula: see text][Formula: see text]mm. Finally, the figure-of-merits (FOMs) for VCOs are discussed. <\/jats:p>","DOI":"10.1142\/s0218126616500535","type":"journal-article","created":{"date-parts":[[2016,1,22]],"date-time":"2016-01-22T03:57:04Z","timestamp":1453435024000},"page":"1650053","source":"Crossref","is-referenced-by-count":3,"title":["A <i>Ku<\/i>-Band Low-Phase-Noise Cross-Coupled VCO in GaAs HBT Technology"],"prefix":"10.1142","volume":"25","author":[{"given":"Jincan","family":"Zhang","sequence":"first","affiliation":[{"name":"Electrical Engineering College, Henan University of Science and Technology, Luoyang 471023, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuming","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor, Materials and Devices, Xi\u2019an 710071, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hongliang","family":"Lu","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor, Materials and Devices, Xi\u2019an 710071, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yimen","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor, Materials and Devices, Xi\u2019an 710071, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bo","family":"Liu","sequence":"additional","affiliation":[{"name":"Electrical Engineering College, Henan University of Science and Technology, Luoyang 471023, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Leiming","family":"Zhang","sequence":"additional","affiliation":[{"name":"Electrical Engineering College, Henan University of Science and Technology, Luoyang 471023, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jinchan","family":"Wang","sequence":"additional","affiliation":[{"name":"Electrical Engineering College, Henan University of Science and Technology, Luoyang 471023, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Liwen","family":"Zhang","sequence":"additional","affiliation":[{"name":"Electrical Engineering College, Henan University of Science and Technology, Luoyang 471023, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2016,3,31]]},"reference":[{"key":"S0218126616500535BIB001","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2010.2098022"},{"key":"S0218126616500535BIB002","doi-asserted-by":"publisher","DOI":"10.1088\/1674-4926\/35\/7\/075004"},{"key":"S0218126616500535BIB003","doi-asserted-by":"publisher","DOI":"10.1109\/TEMC.2013.2271792"},{"key":"S0218126616500535BIB004","doi-asserted-by":"publisher","DOI":"10.1002\/mmce.20308"},{"key":"S0218126616500535BIB006","doi-asserted-by":"publisher","DOI":"10.1049\/iet-map.2012.0634"},{"key":"S0218126616500535BIB008","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126614500030"},{"key":"S0218126616500535BIB009","doi-asserted-by":"publisher","DOI":"10.1088\/1674-4926\/36\/6\/065010"},{"key":"S0218126616500535BIB010","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126615500528"},{"key":"S0218126616500535BIB011","doi-asserted-by":"publisher","DOI":"10.1088\/1674-4926\/30\/2\/025005"},{"key":"S0218126616500535BIB012","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2014.2345342"},{"key":"S0218126616500535BIB014","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2360385"}],"container-title":["Journal of Circuits, Systems and Computers"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S0218126616500535","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,8,6]],"date-time":"2019-08-06T13:09:15Z","timestamp":1565096955000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/abs\/10.1142\/S0218126616500535"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,3,31]]},"references-count":11,"journal-issue":{"issue":"06","published-online":{"date-parts":[[2016,3,31]]},"published-print":{"date-parts":[[2016,6]]}},"alternative-id":["10.1142\/S0218126616500535"],"URL":"https:\/\/doi.org\/10.1142\/s0218126616500535","relation":{},"ISSN":["0218-1266","1793-6454"],"issn-type":[{"value":"0218-1266","type":"print"},{"value":"1793-6454","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,3,31]]}}}