{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,10]],"date-time":"2025-05-10T06:47:11Z","timestamp":1746859631118,"version":"3.37.3"},"reference-count":42,"publisher":"World Scientific Pub Co Pte Ltd","issue":"01","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2018,1]]},"abstract":"<jats:p> The work in this paper presents the analyses of temperature-dependent simultaneous switching noise (SSN) and IR-Drop in multilayer graphene nanoribbon (MLGNR) power interconnects for 16[Formula: see text]nm ITRS technology node. A [Formula: see text] standard cell-based integrated circuit is designed to analyze the SSN and IR-Drop using the proposed temperature-dependent model of MLGNR and Cu interconnect for 10[Formula: see text][Formula: see text]m interconnect length at temperatures (233[Formula: see text]K, 300[Formula: see text]K and 378[Formula: see text]K). Our analysis shows that MLGNR exhibits ([Formula: see text]\u2013[Formula: see text]) less SSN and ([Formula: see text]\u2013[Formula: see text]) less IR-Drop as compared with traditional Cu-based power interconnects. Our analysis also shows that the average percentage of reduction in peak SSN is 52\u201332% (at 233[Formula: see text]K), 53\u201332% (at 300[Formula: see text]K) and 52\u201330% (at 378[Formula: see text]K) less in MLGNR compared with traditional Cu-based power interconnect and the average percentage of reduction in peak IR-Drop in MLGNR is 54\u201331% (at 233[Formula: see text]K), 57\u201329% (at 300[Formula: see text]K) and 57\u201326% (at 378[Formula: see text]K) less than that of Cu-based power interconnects. <\/jats:p>","DOI":"10.1142\/s0218126618500019","type":"journal-article","created":{"date-parts":[[2017,5,25]],"date-time":"2017-05-25T02:57:04Z","timestamp":1495681024000},"page":"1850001","source":"Crossref","is-referenced-by-count":5,"title":["Analysis of Simultaneous Switching Noise and IR-Drop in Side-Contact Multilayer Graphene Nanoribbon Power Distribution Network"],"prefix":"10.1142","volume":"27","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3968-2681","authenticated-orcid":false,"given":"Sandip","family":"Bhattacharya","sequence":"first","affiliation":[{"name":"School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Debaprasad","family":"Das","sequence":"additional","affiliation":[{"name":"Department of Electronics and Communication Engineering, Assam University, Silchar 788011, Assam, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hafizur","family":"Rahaman","sequence":"additional","affiliation":[{"name":"School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103, West Bengal, India"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2017,8,23]]},"reference":[{"key":"S0218126618500019BIB001","doi-asserted-by":"publisher","DOI":"10.1109\/6040.846649"},{"key":"S0218126618500019BIB004","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2002.800533"},{"key":"S0218126618500019BIB005","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2014.2376875"},{"key":"S0218126618500019BIB006","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2014.2362130"},{"key":"S0218126618500019BIB007","doi-asserted-by":"publisher","DOI":"10.1109\/6040.928747"},{"key":"S0218126618500019BIB009","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2003.822568"},{"key":"S0218126618500019BIB011","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2012.2234892"},{"key":"S0218126618500019BIB012","doi-asserted-by":"publisher","DOI":"10.1109\/TEMC.2014.2323980"},{"key":"S0218126618500019BIB013","doi-asserted-by":"publisher","DOI":"10.1109\/TEMC.2012.2216883"},{"key":"S0218126618500019BIB014","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2013.2272788"},{"key":"S0218126618500019BIB015","doi-asserted-by":"publisher","DOI":"10.1109\/LAWP.2011.2158631"},{"key":"S0218126618500019BIB016","doi-asserted-by":"publisher","DOI":"10.1109\/TEMC.2010.2044415"},{"key":"S0218126618500019BIB017","doi-asserted-by":"publisher","DOI":"10.1109\/TEMC.2010.2045894"},{"key":"S0218126618500019BIB018","doi-asserted-by":"publisher","DOI":"10.1109\/TEMC.2011.2159980"},{"key":"S0218126618500019BIB019","doi-asserted-by":"publisher","DOI":"10.1109\/TCPMT.2013.2272938"},{"key":"S0218126618500019BIB020","first-page":"1221","volume":"2","author":"Chun S.","year":"2001","journal-title":"IEEE Int. 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