{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,2,12]],"date-time":"2026-02-12T14:54:55Z","timestamp":1770908095688,"version":"3.50.1"},"reference-count":6,"publisher":"World Scientific Pub Co Pte Lt","issue":"04","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2018,4]]},"abstract":"<jats:p> The technology scaling impact on FinFET-based Field-Programmable Gate Array (FPGA) components (Flip-Flops and Multiplexers) and cluster metrics is evaluated for technology nodes starting from 20[Formula: see text]nm down to 7[Formula: see text]nm. Power consumption, delay and energy (Power Delay Product, or PDP) trends are reported with FinFET technology scaling. Cluster metrics are then evaluated based on three benchmarking circuits: 2-bit adder, 4-bit NAND and cascaded flip-flops chain. The study shows that power, delay and PDP of the FPGA cluster are improved as we scale down the technology. An example for improvement is that for 7[Formula: see text]nm 2-bit adder, circuit speed is 15% higher than its value at 20[Formula: see text]nm and PDP at 7[Formula: see text]nm is reduced by 43% compared to its value at 20[Formula: see text]nm. The impacts of temperature and threshold voltage variations on FPGA cluster performance are also reported after evaluating a 2-bit adder circuit as a benchmark which is then used to calculate the design constraints to meet 99.9% yield percentage. <\/jats:p>","DOI":"10.1142\/s0218126618500561","type":"journal-article","created":{"date-parts":[[2017,7,31]],"date-time":"2017-07-31T03:48:10Z","timestamp":1501472890000},"page":"1850056","source":"Crossref","is-referenced-by-count":7,"title":["Technology Scaling Roadmap for FinFET-Based FPGA Clusters Under Process Variations"],"prefix":"10.1142","volume":"27","author":[{"given":"Osama","family":"Abdelkader","sequence":"first","affiliation":[{"name":"Mentor Graphics Corporation, 78 El Nozha St Heliopolis, Cairo 11361, Egypt"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mohamed Mohie","family":"El-Din","sequence":"additional","affiliation":[{"name":"Mentor Graphics Corporation, 78 El Nozha St Heliopolis, Cairo 11361, Egypt"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hassan","family":"Mostafa","sequence":"additional","affiliation":[{"name":"Electronics and Communications Engineering Department, Cairo University, Giza 12613, Egypt"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hamdy","family":"Abdelhamid","sequence":"additional","affiliation":[{"name":"Center of Nano-Electronics and Devices, AUC and Zewail City of Science and Technology, New Cairo 11835, Egypt"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hossam A. H.","family":"Fahmy","sequence":"additional","affiliation":[{"name":"Electronics and Communications Engineering Department, Cairo University, Giza 12613, Egypt"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yehea","family":"Ismail","sequence":"additional","affiliation":[{"name":"Center of Nano-Electronics and Devices, AUC and Zewail City of Science and Technology, New Cairo 11835, Egypt"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ahmed M.","family":"Soliman","sequence":"additional","affiliation":[{"name":"Electronics and Communications Engineering Department, Cairo University, Giza 12613, Egypt"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2017,12,6]]},"reference":[{"key":"S0218126618500561BIB002","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.848109"},{"key":"S0218126618500561BIB004","volume":"51","author":"Abd-Elhamid H.","year":"2007","journal-title":"Solid-State Electron. 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Electron Devices J."},{"key":"S0218126618500561BIB016","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2013.2238542"}],"container-title":["Journal of Circuits, Systems and Computers"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S0218126618500561","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,8,6]],"date-time":"2019-08-06T18:38:16Z","timestamp":1565116696000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/abs\/10.1142\/S0218126618500561"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,12,6]]},"references-count":6,"journal-issue":{"issue":"04","published-online":{"date-parts":[[2017,12,6]]},"published-print":{"date-parts":[[2018,4]]}},"alternative-id":["10.1142\/S0218126618500561"],"URL":"https:\/\/doi.org\/10.1142\/s0218126618500561","relation":{},"ISSN":["0218-1266","1793-6454"],"issn-type":[{"value":"0218-1266","type":"print"},{"value":"1793-6454","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017,12,6]]}}}