{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,25]],"date-time":"2026-07-25T16:38:28Z","timestamp":1784997508658,"version":"3.55.0"},"reference-count":34,"publisher":"World Scientific Pub Co Pte Lt","issue":"09","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2018,8]]},"abstract":"<jats:p> A low voltage analog VLSI circuit model for Hodgkin\u2013Huxley (HH) neuron cell equations (HH neuron model) is presented. Floating gate MOSFET (FGMOS) transistors in weak inversion region have been used to model HH equations such as gating variables, [Formula: see text] and [Formula: see text] functions and combined action of [Formula: see text], [Formula: see text] and [Formula: see text]. The combination of [Formula: see text], [Formula: see text] and [Formula: see text] controls the Na[Formula: see text] and K[Formula: see text] channel currents. The superiorities of the proposed circuits are low supply voltage, low power consumption, less circuit complexity and as a result, low costs are compared to the previous works. The proposed circuit which uses 24 transistors is simulated in Hspice software using 0.18[Formula: see text] technology and consumes 119[Formula: see text][Formula: see text]W. <\/jats:p>","DOI":"10.1142\/s0218126618501414","type":"journal-article","created":{"date-parts":[[2018,1,9]],"date-time":"2018-01-09T01:36:34Z","timestamp":1515461794000},"page":"1850141","source":"Crossref","is-referenced-by-count":10,"title":["A New Low Voltage Analog Circuit Model for Hodgkin\u2013Huxley Neuron Employing FGMOS Transistors"],"prefix":"10.1142","volume":"27","author":[{"given":"Ava","family":"Salmanpour","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, Shahid Chamran University of Ahvaz, Ahvaz, Iran"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ebrahim","family":"Farshidi","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Shahid Chamran University of Ahvaz, Ahvaz, Iran"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Karim Ansari","family":"Asl","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Shahid Chamran University of Ahvaz, Ahvaz, Iran"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"219","published-online":{"date-parts":[[2018,4,26]]},"reference":[{"key":"S0218126618501414BIB001","doi-asserted-by":"publisher","DOI":"10.3389\/fnins.2011.00073"},{"key":"S0218126618501414BIB002","doi-asserted-by":"publisher","DOI":"10.1007\/s10827-007-0038-6"},{"key":"S0218126618501414BIB003","doi-asserted-by":"publisher","DOI":"10.1109\/82.842110"},{"key":"S0218126618501414BIB004","doi-asserted-by":"publisher","DOI":"10.1007\/s11071-013-1053-y"},{"key":"S0218126618501414BIB005","doi-asserted-by":"publisher","DOI":"10.1007\/s11071-012-0417-z"},{"key":"S0218126618501414BIB006","doi-asserted-by":"publisher","DOI":"10.1007\/s11071-016-3283-2"},{"key":"S0218126618501414BIB007","doi-asserted-by":"publisher","DOI":"10.1109\/TBCAS.2010.2048566"},{"key":"S0218126618501414BIB008","doi-asserted-by":"publisher","DOI":"10.1523\/JNEUROSCI.3575-07.2007"},{"key":"S0218126618501414BIB010","doi-asserted-by":"publisher","DOI":"10.1038\/354515a0"},{"key":"S0218126618501414BIB012","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2006.887981"},{"key":"S0218126618501414BIB013","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2003.813593"},{"key":"S0218126618501414BIB014","doi-asserted-by":"publisher","DOI":"10.1109\/TBCAS.2008.2001867"},{"key":"S0218126618501414BIB015","doi-asserted-by":"publisher","DOI":"10.1109\/TNSRE.2007.916289"},{"key":"S0218126618501414BIB016","volume-title":"Principles of Neural Science","author":"Kandel E.","year":"2012"},{"key":"S0218126618501414BIB017","doi-asserted-by":"publisher","DOI":"10.1109\/4.92015"},{"key":"S0218126618501414BIB020","doi-asserted-by":"publisher","DOI":"10.1113\/jphysiol.1952.sp004764"},{"key":"S0218126618501414BIB021","first-page":"721","volume":"19","author":"Kobayashi R.","year":"2007","journal-title":"Adv. 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