{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,17]],"date-time":"2026-03-17T04:51:26Z","timestamp":1773723086192,"version":"3.50.1"},"reference-count":24,"publisher":"World Scientific Pub Co Pte Lt","issue":"13","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2018,12,15]]},"abstract":"<jats:p> Very large-scale integrated circuit (VLSI) design faces many challenges with today\u2019s nanometer CMOS technology, including leakage current and reliability issues. Magnetic tunnel junction (MTJ) hybrid with CMOS transistors can offer many advantages for future VLSI design such as high performance, low power consumption, easy integration with CMOS and also nonvolatility. However, MTJ-based logic circuits suffer from a reliability challenge that is the read disturbance issue. This paper proposes a new nonvolatile magnetic flip-flop (MFF) that offers a disturbance-free sensing and a low power write operation over the previous MFFs. This magnetic-based logic circuit is based on the previous two-in-one (TIO) MTJ cell that presents the aforementioned attributes. Radiation-induced single event upset, as another reliability challenge, is also taken into consideration for the MFFs and another MFF robust against radiation effects is suggested and evaluated. <\/jats:p>","DOI":"10.1142\/s0218126618502055","type":"journal-article","created":{"date-parts":[[2018,3,16]],"date-time":"2018-03-16T06:20:52Z","timestamp":1521181252000},"page":"1850205","source":"Crossref","is-referenced-by-count":8,"title":["A Reliable, Low Power and Nonvolatile MTJ-Based Flip-Flop for Advanced Nanoelectronics"],"prefix":"10.1142","volume":"27","author":[{"given":"Ramin","family":"Rajaei","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, Shahid Beheshti University, G. 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