{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,5,8]],"date-time":"2025-05-08T07:48:46Z","timestamp":1746690526378},"reference-count":50,"publisher":"World Scientific Pub Co Pte Lt","issue":"14","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2019,12,31]]},"abstract":"<jats:p> Due to the ultra-high carrier mobility and ultralow resistivity of Graphene channel, a Graphene field effect transistor (GFET) is an interesting candidate for future RF and microwave electronics. In this paper, the introduction and review of existing compact circuit-level model of GFETs are presented. A compact GFET model based on drift-diffusion transport theory is then implemented in Verilog-A for RF\/microwave circuit analysis. Finally, the GFET model is used to design a GFET-based distributed amplifier (DA) using advanced design system (ADS) tools. The simulation results demonstrate a gain of 8[Formula: see text]dB, an input\/output return loss less than [Formula: see text]10[Formula: see text]dB, [Formula: see text]3[Formula: see text]dB bandwidth from DC up to 5[Formula: see text]GHz and a dissipation of about 60.45[Formula: see text]mW for a 1.5[Formula: see text]V power supply. The main performance characteristics of the distributed amplifier are compared with 0.18[Formula: see text][Formula: see text]m CMOS technology. <\/jats:p>","DOI":"10.1142\/s0218126619502311","type":"journal-article","created":{"date-parts":[[2019,1,15]],"date-time":"2019-01-15T01:12:25Z","timestamp":1547514745000},"page":"1950231","source":"Crossref","is-referenced-by-count":3,"title":["Distributed Amplifier Based on Monolayer Graphene Field Effect Transistor"],"prefix":"10.1142","volume":"28","author":[{"given":"Ali","family":"Safari","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran"}]},{"given":"Massoud","family":"Dousti","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran"}]},{"given":"Mohammad Bagher","family":"Tavakoli","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran"}]}],"member":"219","published-online":{"date-parts":[[2019,2,25]]},"reference":[{"key":"S0218126619502311BIB001","doi-asserted-by":"publisher","DOI":"10.1016\/j.ssc.2008.02.024"},{"key":"S0218126619502311BIB002","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2008.199"},{"key":"S0218126619502311BIB003","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.102.136808"},{"key":"S0218126619502311BIB004","doi-asserted-by":"publisher","DOI":"10.1063\/1.3483130"},{"key":"S0218126619502311BIB005","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2193129"},{"key":"S0218126619502311BIB006","doi-asserted-by":"publisher","DOI":"10.1140\/epjst\/e2007-00222-8"},{"key":"S0218126619502311BIB007","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2009.2016443"},{"key":"S0218126619502311BIB008","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms1787"},{"key":"S0218126619502311BIB009","first-page":"1","volume":"4","author":"Wu B.","year":"2014","journal-title":"Sci. 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