{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,31]],"date-time":"2026-03-31T14:08:15Z","timestamp":1774966095584,"version":"3.50.1"},"reference-count":33,"publisher":"World Scientific Pub Co Pte Ltd","issue":"01","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2020,1]]},"abstract":"<jats:p> In this paper, a physics-based compact model is developed for novel MgZnO\/ZnO high-electron-mobility transistor (HEMT). Poisson\u2019s equation coupled with 1D Schr\u00f6dinger equation is solved self-consistently in the triangular quantum well to derive an expression of two-dimensional electron gas (2DEG) density with respect to gate voltage at the heterointerface of barrier (MgZnO) and buffer (ZnO) layers. A compact mathematical framework has been devised further for the first time for ZnO-based HEMT to the best of our knowledge using the expression of 2DEG density to compute surface potential, gate charge, gate current, gate capacitance, current\u2013voltage characteristics, output conductance, transconductance and cut-off frequency with respect to gate voltage and along with the drain\u2013source output resistance [Formula: see text]. <\/jats:p>","DOI":"10.1142\/s0218126620500097","type":"journal-article","created":{"date-parts":[[2019,2,14]],"date-time":"2019-02-14T20:31:40Z","timestamp":1550176300000},"page":"2050009","source":"Crossref","is-referenced-by-count":35,"title":["A Physics-Based Analytical Model for MgZnO\/ZnO HEMT"],"prefix":"10.1142","volume":"29","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4145-7202","authenticated-orcid":false,"given":"Yogesh Kumar","family":"Verma","sequence":"first","affiliation":[{"name":"Department of Electronics and Communication 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