{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,22]],"date-time":"2025-03-22T10:55:55Z","timestamp":1742640955747,"version":"3.37.3"},"reference-count":15,"publisher":"World Scientific Pub Co Pte Ltd","issue":"05","funder":[{"name":"Southeast University, China"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2020,4]]},"abstract":"<jats:p> An active quasi-circulator (AQC) integrated circuit is designed and fabricated in a 0.18-[Formula: see text]m CMOS process. The proposed design is based on a parallel combination of a common-source (CS) stage and a combined common-drain (CD) and common-gate (CG) topology. Scattering matrix of the core AQC circuit is derived considering MOSFET\u2019s secondary effects, particularly the body effect as well as output loading effects. Measurements of the quasi-circulator reveal an insertion loss of [Formula: see text] dB between transmitter-to-antenna ports ([Formula: see text]) and of [Formula: see text] dB between antenna-to-receiver ports ([Formula: see text]), within a frequency band of 2.2\u20134.6 GHz. The isolation between the transmitter and the receiver ports ([Formula: see text]) is better than 24 dB with a maximum value of 29.5[Formula: see text]dB @ 3.6[Formula: see text]GHz. The power dissipation of the proposed AQC is 40[Formula: see text]mW and it covers an active chip area of 0.677[Formula: see text]mm<jats:sup>2<\/jats:sup>. <\/jats:p>","DOI":"10.1142\/s0218126620500772","type":"journal-article","created":{"date-parts":[[2019,6,4]],"date-time":"2019-06-04T08:20:17Z","timestamp":1559636417000},"page":"2050077","source":"Crossref","is-referenced-by-count":3,"title":["2.2\u20134.6-GHz Active Quasi-Circulator with &gt; 24-dB Transmit\u2013Receive Isolation"],"prefix":"10.1142","volume":"29","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7648-0344","authenticated-orcid":false,"given":"Najam Muhammad","family":"Amin","sequence":"first","affiliation":[{"name":"National Mobile Communications Research Laboratory, Southeast University, No. 2 Sipailou, Nanjing, Jiangsu 210096, P. R. China"},{"name":"Department of Electrical Engineering, Bahria University, 13 National Stadium Road, Karachi, Sindh 75100, Pakistan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Lianfeng","family":"Shen","sequence":"additional","affiliation":[{"name":"National Mobile Communications Research Laboratory, Southeast University, No. 2 Sipailou, Nanjing, Jiangsu 210096, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Danish","family":"Kaleem","sequence":"additional","affiliation":[{"name":"Department of Avionics, Pakistan Air Force Karachi Institute of Economics and Technology (PAF-KIET), PAF Base, Korangi Creek, Karachi, Sindh 75190, Pakistan"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhi-Gong","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute of RF- & OE-ICs, Southeast University, No. 2 Sipailou, Nanjing, Jiangsu 210096, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Keping","family":"Wang","sequence":"additional","affiliation":[{"name":"Institute of RF- & OE-ICs, Southeast University, No. 2 Sipailou, Nanjing, Jiangsu 210096, P. R. 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