{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T05:37:47Z","timestamp":1740116267562,"version":"3.37.3"},"reference-count":10,"publisher":"World Scientific Pub Co Pte Ltd","issue":"14","funder":[{"name":"National Natural Science Foundation of China under Grant","award":["61904124","61702369"],"award-info":[{"award-number":["61904124","61702369"]}]},{"DOI":"10.13039\/501100010041","name":"Tianjin Municipal Science and Technology Commission","doi-asserted-by":"crossref","award":["18JCQNJC70700"],"award-info":[{"award-number":["18JCQNJC70700"]}],"id":[{"id":"10.13039\/501100010041","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2020,11]]},"abstract":"<jats:p> This study describes a novel bidirectional current shunt monitor (CSM) circuit operating at both positive and negative common-mode (CM) voltages. The proposed CSM circuit mainly consists of two comparators, three error amplifiers, several current-mirror transistors and a few resistors. One comparator is used to detect current flowing direction, and the other one is utilized to ensure good operation of CSM circuit with both positive and negative CM voltages. The proposed CSM circuit has been implemented in SMIC 0.18[Formula: see text][Formula: see text]m standard CMOS process and its performances have been verified by simulations. The simulated results show that the proposed CSM circuit, at a supply voltage of 5[Formula: see text]V and with an input CM voltage range from [Formula: see text] to 4[Formula: see text]V, can sense a voltage difference of 4\u201340[Formula: see text]mV and keep a constant scaled gain of 100[Formula: see text]V\/V. The gain error is less than 0.65% and the common-mode rejection ratio (CMRR) is higher than 130[Formula: see text]dB at 1[Formula: see text]kHz. Simulation results show that the output voltage of CSM circuit varies linearly with the CSM input sense voltage. <\/jats:p>","DOI":"10.1142\/s0218126620502217","type":"journal-article","created":{"date-parts":[[2020,2,13]],"date-time":"2020-02-13T07:59:46Z","timestamp":1581580786000},"page":"2050221","source":"Crossref","is-referenced-by-count":1,"title":["A \u22124\u20134 V Input Common-Mode Range Bidirectional Current Shunt Monitor"],"prefix":"10.1142","volume":"29","author":[{"given":"S.","family":"Huang","sequence":"first","affiliation":[{"name":"School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peijun","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0236-3019","authenticated-orcid":false,"given":"Quanzhen","family":"Duan","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuemin","family":"Ding","sequence":"additional","affiliation":[{"name":"School of Computer Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhen","family":"Meng","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2020,3,25]]},"reference":[{"key":"S0218126620502217BIB001","doi-asserted-by":"crossref","first-page":"94","DOI":"10.1109\/LSSC.2018.2855407","volume":"1","author":"Long X.","year":"2018","journal-title":"IEEE Solid-State Circuits Lett."},{"key":"S0218126620502217BIB002","doi-asserted-by":"crossref","first-page":"800","DOI":"10.1109\/JSSC.2015.2511168","volume":"51","author":"Shalmany S. H.","year":"2016","journal-title":"IEEE J. Solid-State Circuits"},{"key":"S0218126620502217BIB003","first-page":"374","volume-title":"IEEE Int. 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