{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,9]],"date-time":"2026-01-09T01:35:30Z","timestamp":1767922530276,"version":"3.49.0"},"reference-count":34,"publisher":"World Scientific Pub Co Pte Ltd","issue":"14","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2020,11]]},"abstract":"<jats:p>In non-isolated bidirectional DC-DC converters (NIBIDC), voltage output of buck\/boost mode is incongruous at lower and higher end due to the existing gain. In this paper, a novel NIBIDC is designed in such a way that it enhances the gain in both buck and boost mode of operation. The proposed NIBIDC is employed with four power switches (MOSFET) with an anti-parallel diode embodied, four inductors and three capacitors used as passive elements. The current flow in parallel connected inductor improves the circuit competence. Voltage gain of NIBIDC in buck operation is lower than conventional cascaded bidirectional buck\/boost converter (CCBBC) whereas the voltage gain is higher than CCBBC in boost mode. The switching stress is same while the efficiency of NIBIDC is more than CCBBC. The topology structure of the NIBIDC is simple and easy to control. The performance analysis under steady-state condition of the novel converter is carried out and a detailed comparison with CCBBC is done in connection to switching stress, converter efficiency and duty ratios to output power, etc. The operation details for proposed NIBIDC in both mode is verified\/validated by experimenting with 20[Formula: see text]V input for different duty ratios in charging and discharging state of a battery and the results infer to be identical with theoretical analysis.<\/jats:p>","DOI":"10.1142\/s0218126620502229","type":"journal-article","created":{"date-parts":[[2020,2,13]],"date-time":"2020-02-13T07:59:46Z","timestamp":1581580786000},"page":"2050222","source":"Crossref","is-referenced-by-count":24,"title":["A Novel Topology for Bidirectional Converter with High Buck Boost Gain"],"prefix":"10.1142","volume":"29","author":[{"given":"S.","family":"Saravanan","sequence":"first","affiliation":[{"name":"Department of Electrical and Electronics Engineering, B. V. Raju Institute of Technology, Narsapur, Telangana 502313, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"K.","family":"Karunanithi","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronics Engineering, Vel Tech Rangarajan Dr. Sagunthala R&D Institute of Science and Technology, Tamil Nadu 600 062, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7579-8043","authenticated-orcid":false,"given":"S.","family":"Pragaspathy","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronics Engineering, Vishnu Institute of Technology, Andhra Pradesh 534202, India"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2020,3,20]]},"reference":[{"key":"S0218126620502229BIB001","doi-asserted-by":"crossref","first-page":"1482","DOI":"10.1109\/TSG.2016.2600863","volume":"9","author":"Rahbar K.","year":"2018","journal-title":"IEEE Trans. Smart Grid"},{"key":"S0218126620502229BIB002","doi-asserted-by":"crossref","first-page":"6630","DOI":"10.1109\/TPWRS.2018.2834461","volume":"33","author":"Du E.","year":"2018","journal-title":"IEEE Trans. Power Syst."},{"key":"S0218126620502229BIB003","doi-asserted-by":"crossref","first-page":"2405","DOI":"10.1520\/JTE20170590","volume":"47","author":"Pragaspathy S.","year":"2019","journal-title":"J. Test. Eval."},{"key":"S0218126620502229BIB004","first-page":"272","volume":"53","author":"Wai R. J.","year":"2005","journal-title":"IEEE Trans. Ind. Electron."},{"key":"S0218126620502229BIB005","doi-asserted-by":"crossref","first-page":"54","DOI":"10.1109\/TPEL.2003.820550","volume":"19","author":"Peng F. Z.","year":"2004","journal-title":"IEEE Trans. Power Electron."},{"key":"S0218126620502229BIB006","first-page":"1","volume":"28","author":"Buvana D.","year":"2018","journal-title":"J. Circ., Syst. Comput."},{"key":"S0218126620502229BIB007","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126604001490"},{"key":"S0218126620502229BIB008","doi-asserted-by":"crossref","first-page":"587","DOI":"10.1109\/TIE.2009.2025283","volume":"57","author":"Camara M. B.","year":"2010","journal-title":"IEEE Trans. Ind. Electron."},{"key":"S0218126620502229BIB009","first-page":"435","volume-title":"Proc. IEEE Nation. Aero. Electron. Conf.","author":"Kazimierczuk M. K."},{"key":"S0218126620502229BIB010","doi-asserted-by":"crossref","first-page":"90","DOI":"10.1109\/41.345851","volume":"42","author":"Mak O. C.","year":"1995","journal-title":"IEEE Trans. Ind. Electron."},{"key":"S0218126620502229BIB011","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1142\/S0218126618501591","volume":"27","author":"Athikkal S.","year":"2018","journal-title":"J. Circ., Syst. Comput."},{"key":"S0218126620502229BIB012","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126617501055"},{"key":"S0218126620502229BIB013","first-page":"1","volume":"7","author":"Uthirasamy R.","year":"2015","journal-title":"IET Power Electron."},{"key":"S0218126620502229BIB014","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126618501888"},{"key":"S0218126620502229BIB015","doi-asserted-by":"crossref","first-page":"184","DOI":"10.1109\/63.737607","volume":"14","author":"Huber L.","year":"1999","journal-title":"IEEE Trans. Power Electron."},{"key":"S0218126620502229BIB016","doi-asserted-by":"crossref","first-page":"2721","DOI":"10.1109\/TVT.2008.915491","volume":"57","author":"Camara M. B.","year":"2008","journal-title":"IEEE Trans. Veh. Tech."},{"key":"S0218126620502229BIB017","doi-asserted-by":"crossref","first-page":"1578","DOI":"10.1109\/TIE.2008.2009561","volume":"56","author":"Zhang F.","year":"2009","journal-title":"IEEE Trans. Ind. Electron."},{"key":"S0218126620502229BIB018","doi-asserted-by":"crossref","first-page":"595","DOI":"10.1109\/63.849029","volume":"15","author":"Jain M. D.","year":"2000","journal-title":"IEEE Trans. Power Electron."},{"key":"S0218126620502229BIB019","first-page":"784","volume-title":"Proc. IEEE App. Power Electron. Conf. Expos.","author":"Han S."},{"key":"S0218126620502229BIB020","author":"Karthikeyan V.","year":"2019","journal-title":"IEEE Trans. Circuits Syst. II: Express Briefs"},{"key":"S0218126620502229BIB021","doi-asserted-by":"crossref","first-page":"422","DOI":"10.1109\/TIE.2011.2134060","volume":"59","author":"Yang L. S.","year":"2012","journal-title":"IEEE Trans. Ind. Electron."},{"key":"S0218126620502229BIB022","doi-asserted-by":"crossref","first-page":"525","DOI":"10.1109\/TIA.2003.808965","volume":"39","author":"Li H.","year":"2013","journal-title":"IEEE Trans. Ind. Electron."},{"key":"S0218126620502229BIB023","doi-asserted-by":"crossref","first-page":"480","DOI":"10.1109\/TPEL.2006.889928","volume":"22","author":"Duarte J. L.","year":"2007","journal-title":"IEEE Trans. Power Electron."},{"key":"S0218126620502229BIB024","doi-asserted-by":"crossref","first-page":"1394","DOI":"10.1109\/TPEL.2018.2828984","volume":"34","author":"Uno M.","year":"2019","journal-title":"IEEE Trans. Power Electron."},{"key":"S0218126620502229BIB025","doi-asserted-by":"crossref","first-page":"595","DOI":"10.1109\/63.849029","volume":"15","author":"Jain M.","year":"2000","journal-title":"IEEE Trans. Power Electron."},{"key":"S0218126620502229BIB026","first-page":"2197","volume-title":"Proc. IEEE Power Electron. Specialists Conf.","author":"Cheng K. W. E."},{"key":"S0218126620502229BIB027","first-page":"614","volume-title":"Proc. IEEE App. Power Electron. Conf. Expos.","author":"Sable D. M."},{"key":"S0218126620502229BIB028","author":"Mohammadi M. R.","year":"2019","journal-title":"IEEE Trans. Indus. Electron."},{"key":"S0218126620502229BIB029","doi-asserted-by":"crossref","first-page":"2309","DOI":"10.1109\/TPEL.2011.2172465","volume":"27","author":"Nejabatkhah F.","year":"2012","journal-title":"IEEE Trans. Power Electron."},{"key":"S0218126620502229BIB030","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1142\/S0218126619501846","volume":"28","author":"Kumar K. Ramash","year":"2019","journal-title":"J. Circ., Syst. Comput."},{"key":"S0218126620502229BIB031","doi-asserted-by":"crossref","first-page":"106","DOI":"10.1109\/TPEL.2018.2815718","volume":"34","author":"Li Z.","year":"2019","journal-title":"IEEE Trans. Power Electron."},{"key":"S0218126620502229BIB032","doi-asserted-by":"crossref","first-page":"309","DOI":"10.1049\/iet-pel.2009.0341","volume":"4","author":"Berkovich Y.","year":"2011","journal-title":"IET Power Electron."},{"key":"S0218126620502229BIB033","doi-asserted-by":"crossref","first-page":"235","DOI":"10.3103\/S0003701X18040047","volume":"54","author":"Ba A.","year":"2018","journal-title":"Applied Solar Energy"},{"key":"S0218126620502229BIB034","doi-asserted-by":"crossref","first-page":"253","DOI":"10.15244\/pjoes\/64457","volume":"26","author":"Pragaspathy S.","year":"2017","journal-title":"Pol. J. Environ. Stud."}],"container-title":["Journal of Circuits, Systems and Computers"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S0218126620502229","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,7,31]],"date-time":"2024-07-31T15:17:21Z","timestamp":1722439041000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/abs\/10.1142\/S0218126620502229"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,3,20]]},"references-count":34,"journal-issue":{"issue":"14","published-print":{"date-parts":[[2020,11]]}},"alternative-id":["10.1142\/S0218126620502229"],"URL":"https:\/\/doi.org\/10.1142\/s0218126620502229","relation":{},"ISSN":["0218-1266","1793-6454"],"issn-type":[{"value":"0218-1266","type":"print"},{"value":"1793-6454","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,3,20]]}}}