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A switch is introduced as the load of the primary inductor of the conventional transformer-based SPDT switch to improve the IL performance in transmission and receiving operation modes. A transformer-based SPDT switch is implemented with the switching load technique in TSMC 40[Formula: see text]nm CMOS technology. The transformer which has a symmetrical shape is implemented with the thick metal for low IL propose. The simulated results show that the proposed SPDT switch achieves a minimum insertion loss of 1.64[Formula: see text]dB and the IL is better than 2.2[Formula: see text]dB across the range from 24 to 35[Formula: see text]GHz. The proposed SPDT switch occupies a core area of [Formula: see text]m<jats:sup>2<\/jats:sup>and the return losses are better than [Formula: see text][Formula: see text]dB at 24\u201335[Formula: see text]GHz.<\/jats:p>","DOI":"10.1142\/s0218126621501474","type":"journal-article","created":{"date-parts":[[2020,12,11]],"date-time":"2020-12-11T07:32:53Z","timestamp":1607671973000},"page":"2150147","source":"Crossref","is-referenced-by-count":0,"title":["Low-Mismatch and Low-Loss Transformer-Based SPDT Switch with Switching Load Technique for 5G Applications"],"prefix":"10.1142","volume":"30","author":[{"given":"Xing","family":"Quan","sequence":"first","affiliation":[{"name":"School of Mechano-electronic Engineering, Xidian University, Xi\u2019an 710071, P.\u00a0R.\u00a0China"},{"name":"State Key Laboratory of Millimeter Waves, Nanjing 210096, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jinsong","family":"Zhan","sequence":"additional","affiliation":[{"name":"School of Mechano-electronic Engineering, Xidian University, Xi\u2019an 710071, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jiang","family":"Luo","sequence":"additional","affiliation":[{"name":"Nanjing Electronic Devices Institute, Nanjing 210016, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Guodong","family":"Su","sequence":"additional","affiliation":[{"name":"Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiang","family":"Wang","sequence":"additional","affiliation":[{"name":"Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, P.\u00a0R.\u00a0China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2020,12,10]]},"reference":[{"key":"S0218126621501474BIB001","doi-asserted-by":"publisher","DOI":"10.1142\/S021812662030007X"},{"key":"S0218126621501474BIB002","doi-asserted-by":"publisher","DOI":"10.1142\/S021812661850158X"},{"key":"S0218126621501474BIB003","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126612400099"},{"key":"S0218126621501474BIB004","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2019.2952579"},{"key":"S0218126621501474BIB005","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2020.2980509"},{"key":"S0218126621501474BIB006","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2019.2907254"},{"key":"S0218126621501474BIB007","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2822676"},{"key":"S0218126621501474BIB008","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2877203"},{"key":"S0218126621501474BIB009","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2019.2906614"},{"key":"S0218126621501474BIB010","doi-asserted-by":"publisher","DOI":"10.1109\/LMWC.2018.2802706"},{"key":"S0218126621501474BIB011","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2020.2969904"},{"key":"S0218126621501474BIB012","first-page":"1516","volume":"55","author":"Sadhu B.","year":"2020","journal-title":"IEEE J. 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