{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,1]],"date-time":"2025-11-01T09:34:49Z","timestamp":1761989689787,"version":"3.41.2"},"reference-count":32,"publisher":"World Scientific Pub Co Pte Ltd","issue":"18","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2022,12]]},"abstract":"<jats:p> Single Event Transients (SETs) have become a major reliability concern for integrated circuits used in critical applications. Research to improve the radiation robustness of digital circuits has been conducted, assessing all abstraction levels (from the device up to the system). This study evaluates transistor-level radiation-hardened techniques in combinational logic, such as transistor folding, sizing and reordering. In addition, the efficiency of using supergates, including series-parallel and non-series-parallel CMOS structures, to harden the combinational logic is discussed. The dependence of input signals probability on a logic cell susceptibility to SET is assessed. Moreover, a new concept of electrical masking is introduced. The robustness of the investigated logic cells was evaluated regarding their SET rate. The CREME96 tool was used to generate the SET rates, and an electrical model was used to perform particle hit simulations. Obtained results have indicated that modifying the structure of logic gates can substantially improve circuit robustness without necessarily worsening its performance. Besides, using supergates in combinational logic design has demonstrated to be a promising hardening strategy. The most robust supergate implementation of a five-input logic function provided up to [Formula: see text] SET rate reduction regarding an approach based on standard cells, along with lower critical delay ([Formula: see text]) and average power ([Formula: see text]). <\/jats:p>","DOI":"10.1142\/s0218126622400096","type":"journal-article","created":{"date-parts":[[2022,9,30]],"date-time":"2022-09-30T03:27:12Z","timestamp":1664508432000},"source":"Crossref","is-referenced-by-count":2,"title":["Transistor-Level Radiation Hardening by Design Techniques in Complex Gates"],"prefix":"10.1142","volume":"31","author":[{"given":"Bruno T.","family":"Ferraz","sequence":"first","affiliation":[{"name":"Center for Technological Development, Federal University of Pelotas, Rua Gomes Carneiro, 1, Pelotas, Rio Grande do Sul, 96010-900, Brazil"}]},{"given":"Henrique","family":"Kessler","sequence":"additional","affiliation":[{"name":"Center for Technological Development, Federal University of Pelotas, Rua Gomes Carneiro, 1, Pelotas, Rio Grande do Sul, 96010-900, Brazil"}]},{"given":"Vin\u00edcius V. A.","family":"Camargo","sequence":"additional","affiliation":[{"name":"Center for Technological Development, Federal University of Pelotas, Rua Gomes Carneiro, 1, Pelotas, Rio Grande do Sul, 96010-900, Brazil"}]}],"member":"219","published-online":{"date-parts":[[2022,11,14]]},"reference":[{"key":"S0218126622400096BIB001","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2013.2255624"},{"key":"S0218126622400096BIB002","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2003.813129"},{"key":"S0218126622400096BIB003","first-page":"2115","volume":"64","author":"Harrington R.","year":"2017","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"S0218126622400096BIB004","doi-asserted-by":"crossref","first-page":"361","DOI":"10.1109\/ICECS.2018.8617996","volume-title":"2018 25th IEEE Int. Conf. Electronics, Circuits and Systems (ICECS)","author":"Andjelkovic M.","year":"2018"},{"key":"S0218126622400096BIB005","doi-asserted-by":"crossref","first-page":"45","DOI":"10.1109\/MIEL52794.2021.9569065","volume-title":"2021 IEEE 32nd Int. Conf. Microelectronics (MIEL)","author":"Krstic M.","year":"2021"},{"key":"S0218126622400096BIB006","doi-asserted-by":"publisher","DOI":"10.1007\/s10470-018-1300-8"},{"key":"S0218126622400096BIB007","doi-asserted-by":"crossref","first-page":"47","DOI":"10.1109\/MDAT.2015.2499272","volume":"34","author":"Sayil S.","year":"2015","journal-title":"IEEE Design Test"},{"key":"S0218126622400096BIB008","first-page":"6","volume-title":"12th IEEE Int. On-Line Testing Symp. (IOLTS\u201906)","author":"Nieuwland A. K.","year":"2006"},{"issue":"6","key":"S0218126622400096BIB009","doi-asserted-by":"crossref","first-page":"3511","DOI":"10.1109\/TNS.2009.2034377","volume":"56","author":"Cannon E. H.","year":"2009","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"S0218126622400096BIB010","doi-asserted-by":"crossref","first-page":"113457","DOI":"10.1016\/j.microrel.2019.113457","volume":"100","author":"Aguiar Y.","year":"2019","journal-title":"Microelectron. Reliab."},{"key":"S0218126622400096BIB011","doi-asserted-by":"crossref","first-page":"1581","DOI":"10.1109\/TNS.2020.3003166","volume":"67","author":"Aguiar Y.","year":"2020","journal-title":"IEEE Trans. Nucl. Sci."},{"issue":"1","key":"S0218126622400096BIB012","doi-asserted-by":"crossref","first-page":"177","DOI":"10.1109\/TDMR.2012.2227261","volume":"13","author":"Chen J.","year":"2012","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"S0218126622400096BIB013","doi-asserted-by":"crossref","DOI":"10.1007\/978-3-030-68368-9","volume-title":"Mitigating Process Variability and Soft Errors at Circuit-Level for FinFETs","author":"Zimpeck A.","year":"2021"},{"issue":"7","key":"S0218126622400096BIB014","doi-asserted-by":"crossref","first-page":"1465","DOI":"10.1109\/TNS.2019.2918077","volume":"66","author":"Aguiar Y.","year":"2019","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"S0218126622400096BIB015","doi-asserted-by":"crossref","first-page":"143","DOI":"10.1145\/775832.775871","volume-title":"Proc. 40th annual Design Automation Conf.","author":"Mishchenko A.","year":"2003"},{"key":"S0218126622400096BIB016","doi-asserted-by":"crossref","first-page":"236","DOI":"10.1109\/ISVLSI.2013.6654639","volume-title":"2013 IEEE Computer Society Annual Symp. VLSI (ISVLSI)","author":"Machado L.","year":"2013"},{"key":"S0218126622400096BIB018","doi-asserted-by":"crossref","first-page":"2150","DOI":"10.1109\/23.659030","volume":"44","author":"Tylka A. J.","year":"1997","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"S0218126622400096BIB019","doi-asserted-by":"crossref","first-page":"1726","DOI":"10.1109\/TNS.2010.2044807","volume":"57","author":"Weller R. A.","year":"2010","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"S0218126622400096BIB020","doi-asserted-by":"crossref","first-page":"134","DOI":"10.1016\/j.nima.2010.04.054","volume":"621","author":"Abat E.","year":"2010","journal-title":"Nucl. Instrum. Methods Phys. Res. A: Accel. Spectrom. Detect. Assoc. Equip."},{"key":"S0218126622400096BIB021","doi-asserted-by":"crossref","first-page":"35","DOI":"10.1109\/MIEL.2017.8190065","volume-title":"2017 IEEE 30th Int. Conf. Microelectronics (MIEL)","author":"Andjelkovic M.","year":"2017"},{"key":"S0218126622400096BIB022","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.1982.4336490"},{"key":"S0218126622400096BIB023","doi-asserted-by":"crossref","first-page":"3152","DOI":"10.1109\/TNS.2009.2033798","volume":"56","author":"Kauppila J. S.","year":"2009","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"S0218126622400096BIB024","doi-asserted-by":"crossref","first-page":"1540","DOI":"10.1109\/TNS.2015.2449073","volume":"62","author":"Black D. A.","year":"2015","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"S0218126622400096BIB025","doi-asserted-by":"crossref","first-page":"1577","DOI":"10.1109\/23.211340","volume":"39","author":"Petersen E.","year":"1992","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"S0218126622400096BIB026","doi-asserted-by":"crossref","first-page":"2758","DOI":"10.1109\/23.556863","volume":"43","author":"Tylka A. J.","year":"1996","journal-title":"IEEE Trans. Nucl. Sci."},{"key":"S0218126622400096BIB027","doi-asserted-by":"crossref","first-page":"12","DOI":"10.3390\/aerospace7020012","volume":"7","author":"Aguiar Y. Q.","year":"2020","journal-title":"Aerospace"},{"volume-title":"Logical Effort: Designing Fast CMOS Circuits","year":"1999","author":"Sutherland I.","key":"S0218126622400096BIB028"},{"key":"S0218126622400096BIB029","doi-asserted-by":"crossref","first-page":"247","DOI":"10.1109\/TVLSI.2016.2569562","volume":"25","author":"Raji M.","year":"2016","journal-title":"IEEE Trans. Very Large Scale Integr. (VLSI) Syst."},{"key":"S0218126622400096BIB030","doi-asserted-by":"crossref","first-page":"155","DOI":"10.1109\/TCAD.2005.853696","volume":"25","author":"Zhou Q.","year":"2005","journal-title":"IEEE Trans. Comput.-Aided Design Integr. Circuits Syst."},{"key":"S0218126622400096BIB031","doi-asserted-by":"publisher","DOI":"10.1007\/s00202-011-0212-8"},{"key":"S0218126622400096BIB033","doi-asserted-by":"crossref","first-page":"49","DOI":"10.1145\/1854153.1854167","volume-title":"Proc. 23rd Symp. Integrated circuits and system design","author":"Callegaro V.","year":"2010"},{"key":"S0218126622400096BIB034","doi-asserted-by":"crossref","first-page":"692","DOI":"10.1109\/TVLSI.2015.2410764","volume":"24","author":"Possani V. N.","year":"2015","journal-title":"IEEE Trans. Very Large Scale Integr. (VLSI) Syst."}],"container-title":["Journal of Circuits, Systems and Computers"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S0218126622400096","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,12,31]],"date-time":"2022-12-31T11:57:48Z","timestamp":1672487868000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/10.1142\/S0218126622400096"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,11,14]]},"references-count":32,"journal-issue":{"issue":"18","published-print":{"date-parts":[[2022,12]]}},"alternative-id":["10.1142\/S0218126622400096"],"URL":"https:\/\/doi.org\/10.1142\/s0218126622400096","relation":{},"ISSN":["0218-1266","1793-6454"],"issn-type":[{"type":"print","value":"0218-1266"},{"type":"electronic","value":"1793-6454"}],"subject":[],"published":{"date-parts":[[2022,11,14]]},"article-number":"2240009"}}