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The simulation results show that the short channel effects (SCEs) including the sub-threshold swing (SS) and the drain-induced barrier lowering (DIBL) are improved. Also, OFF current has a significant reduction, which in turn increases the current ratio. Besides, improving the ambipolar behavior and leakage current are other benefits of the proposed structure. <\/jats:p>","DOI":"10.1142\/s0218126622501821","type":"journal-article","created":{"date-parts":[[2022,3,25]],"date-time":"2022-03-25T04:54:16Z","timestamp":1648184056000},"source":"Crossref","is-referenced-by-count":9,"title":["Improving the Performance of a Doping-Less Carbon Nanotube FET with Dual Junction Source and Drain Regions: Numerical Studies"],"prefix":"10.1142","volume":"31","author":[{"given":"Maryam","family":"Ghodrati","sequence":"first","affiliation":[{"name":"Department of Electronics, Faculty of Engineering, Lorestan University, Khorram-Abad, Iran"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7196-6513","authenticated-orcid":false,"given":"Ali","family":"Mir","sequence":"additional","affiliation":[{"name":"Department of Electronics, Faculty of Engineering, Lorestan University, Khorram-Abad, Iran"}]}],"member":"219","published-online":{"date-parts":[[2022,3,24]]},"reference":[{"key":"S0218126622501821BIB001","doi-asserted-by":"publisher","DOI":"10.1006\/spmi.2000.0920"},{"key":"S0218126622501821BIB002","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.816524"},{"key":"S0218126622501821BIB003","doi-asserted-by":"publisher","DOI":"10.1021\/nl047931j"},{"key":"S0218126622501821BIB004","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2829633"},{"key":"S0218126622501821BIB005","first-page":"518","volume":"1","author":"Koswatta S. 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