{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,29]],"date-time":"2025-09-29T11:54:27Z","timestamp":1759146867666,"version":"3.41.2"},"reference-count":20,"publisher":"World Scientific Pub Co Pte Ltd","issue":"13","funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"crossref","award":["61861009","62064002"],"award-info":[{"award-number":["61861009","62064002"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"crossref"}]},{"name":"Director Foundation of Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing","award":["GXKL06200105"],"award-info":[{"award-number":["GXKL06200105"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2022,9,15]]},"abstract":"<jats:p> This paper presents a low-dropout voltage regulator (LDO) with a slew-rate enhancement circuit. The proposed slew-rate enhancement circuit was utilized to generate a large current for driving a large pass transistor and quicker charge and discharge of the parasitic capacitance. Hence, the transient response of the LDO was significantly enhanced owing to the improvement in the slew rate at the gate of the pass transistor. The proposed LDO regulator was designed and fabricated using the SMIC 0.18-[Formula: see text]m standard CMOS process, and its core area occupation was only 0.012[Formula: see text]mm<jats:sup>2<\/jats:sup>. The measurement results show that the output overshoot\/undershoot voltages and settling times of the proposed LDO with SRE are 190[Formula: see text]mV\/267[Formula: see text]ns and 174[Formula: see text]mV\/233[Formula: see text]ns when the load current changes between 100[Formula: see text][Formula: see text]A and 100[Formula: see text]mA. It has a moderate figure-of-merit (FOM) of 0.267[Formula: see text]ns. <\/jats:p>","DOI":"10.1142\/s021812662250311x","type":"journal-article","created":{"date-parts":[[2022,6,23]],"date-time":"2022-06-23T08:16:36Z","timestamp":1655972196000},"source":"Crossref","is-referenced-by-count":1,"title":["A Transient-Enhanced  Low-Dropout Regulator in 0.18-\u03bcm CMOS Technology"],"prefix":"10.1142","volume":"31","author":[{"given":"Baolin","family":"Wei","sequence":"first","affiliation":[{"name":"Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guilin University of Electronic Technology, Guilin, Guangxi 541004, P. R. China"}]},{"given":"Yuanyuan","family":"Li","sequence":"additional","affiliation":[{"name":"Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guilin University of Electronic Technology, Guilin, Guangxi 541004, P. R. China"}]},{"given":"Weilin","family":"Xu","sequence":"additional","affiliation":[{"name":"Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guilin University of Electronic Technology, Guilin, Guangxi 541004, P. R. China"}]},{"given":"Xueming","family":"Wei","sequence":"additional","affiliation":[{"name":"Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guilin University of Electronic Technology, Guilin, Guangxi 541004, P. R. China"}]},{"given":"Jihai","family":"Duan","sequence":"additional","affiliation":[{"name":"Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guilin University of Electronic Technology, Guilin, Guangxi 541004, P. R. 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