{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,2]],"date-time":"2026-01-02T07:10:43Z","timestamp":1767337843928,"version":"3.41.2"},"reference-count":66,"publisher":"World Scientific Pub Co Pte Ltd","issue":"05","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2023,3,30]]},"abstract":"<jats:p> In the present scenario, the devices supporting neighbor discovery are going through the renovation phase, and crossing the classical barrier such as the trade-off between power dissipation and access time. The presence of opportunistic nodes in place of static nodes has presented multiple challenges for such devices. Therefore, the focus of neighbor discovery has mostly shifted toward such issues where power dissipation and latency of mobile nodes need to be simultaneously improved to achieve uninterrupted and quality communication. Since static random-access memory (SRAM) is an integral part of all such sensor nodes and directly impacts power dissipation and latency, therefore in this paper, we have introduced a novel SRAM cell for such nodes. The proposed eleven transistors (11T) SRAM cell is compared with six recently reported designs to check the improvement of SRAM key design parameters. The compared designs include Standard 6T (S6T), tunable 8T(TU8T), PPN-based 10T (PN10T), Schmitt trigger-based 10T (S10T), bit-line-dependent 11T (DP11T) bit-cell and stable low power 11T (SP11T). The improvement in write ability and read stability of proposed 11T cell is represented by [Formula: see text] and [Formula: see text] enhancement of write and read static margins, respectively, in comparison to S6T\/TU8T\/PN10T\/S10T\/DP11T\/SP11T. Further, the leakage power dissipation is reduced by [Formula: see text] as compared to S6T\/TU8T\/S10T\/PN10T\/DP 11T\/SP11T. Additionally, power dissipation and delay of proposed 11T cell during read operation is reduced by [Formula: see text] and [Formula: see text], respectively, as compared to S6T\/TU8T\/PN10T\/S10T\/DP11T\/SP11T. It is worth mentioning here that the proposed 11T also shows narrower variability in power dissipation and current values during read operation comparing S6T. The proposed 11T design successfully mitigates the half-select issue and allows the SRAM array to attain the bit-interleaved architecture implementation. <\/jats:p>","DOI":"10.1142\/s0218126623500780","type":"journal-article","created":{"date-parts":[[2022,9,10]],"date-time":"2022-09-10T05:14:01Z","timestamp":1662786841000},"source":"Crossref","is-referenced-by-count":13,"title":["Low Power Static Random-Access Memory Cell Design for Mobile Opportunistic Networks Sensor Nodes"],"prefix":"10.1142","volume":"32","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-2434-5073","authenticated-orcid":false,"given":"Ashish","family":"Sachdeva","sequence":"first","affiliation":[{"name":"Electronics and Communication Department, Chandigarh University, Mohali, Punjab, India"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2022,10,27]]},"reference":[{"key":"S0218126623500780BIB001","doi-asserted-by":"crossref","first-page":"1497","DOI":"10.1016\/j.adhoc.2012.02.016","volume":"10","author":"Miorandi D.","year":"2012","journal-title":"Ad Hoc Netw."},{"key":"S0218126623500780BIB002","doi-asserted-by":"crossref","first-page":"7806","DOI":"10.1109\/TII.2021.3073066","volume":"17","author":"Cao K.","year":"2021","journal-title":"IEEE Trans. Ind. Inf."},{"journal-title":"IEEE Internet Things J.","year":"2021","author":"Cao K.","key":"S0218126623500780BIB003"},{"key":"S0218126623500780BIB004","doi-asserted-by":"crossref","first-page":"2787","DOI":"10.1016\/j.comnet.2010.05.010","volume":"54","author":"Atzori L.","year":"2010","journal-title":"Comput. Netw."},{"key":"S0218126623500780BIB005","doi-asserted-by":"crossref","first-page":"85","DOI":"10.1109\/MCOM.2014.6710069","volume":"52","author":"Conti M.","year":"2014","journal-title":"IEEE Commun. Mag."},{"key":"S0218126623500780BIB006","doi-asserted-by":"crossref","first-page":"44","DOI":"10.1109\/MWC.2010.5675777","volume":"17","author":"Zorzi M.","year":"2010","journal-title":"IEEE Wireless Commun."},{"key":"S0218126623500780BIB009","doi-asserted-by":"crossref","first-page":"3364","DOI":"10.3390\/s19153364","volume":"19","author":"Borza P. N.","year":"2019","journal-title":"Sensors"},{"key":"S0218126623500780BIB010","doi-asserted-by":"crossref","first-page":"782","DOI":"10.1109\/ISQED.2009.4810392","volume-title":"2009 10th Int. Symp. Quality Electronic Design","author":"Kumar A.","year":"2009"},{"key":"S0218126623500780BIB011","doi-asserted-by":"crossref","first-page":"172","DOI":"10.1109\/TDMR.2016.2544780","volume":"16","author":"Pal S.","year":"2016","journal-title":"IEEE Trans. Device Mater. Reliab."},{"key":"S0218126623500780BIB012","doi-asserted-by":"crossref","first-page":"405","DOI":"10.1016\/j.microrel.2011.09.034","volume":"52","author":"Islam A.","year":"2012","journal-title":"Microelectron. Reliab."},{"key":"S0218126623500780BIB013","doi-asserted-by":"crossref","first-page":"104","DOI":"10.1109\/ACCESS.2014.2304568","volume":"2","author":"Saha S. K.","year":"2014","journal-title":"IEEE Access"},{"issue":"2","key":"S0218126623500780BIB014","doi-asserted-by":"crossref","first-page":"2250023","DOI":"10.1142\/S0218126622500232","volume":"31","author":"Sachdeva A.","year":"2022","journal-title":"J. Circuits Syst. Comput."},{"key":"S0218126623500780BIB015","doi-asserted-by":"crossref","first-page":"656","DOI":"10.1109\/JSSC.2017.2747151","volume":"53","author":"Nabavi M.","year":"2017","journal-title":"IEEE J. Solid-State Circuits"},{"key":"S0218126623500780BIB016","doi-asserted-by":"crossref","first-page":"1193","DOI":"10.1109\/TVLSI.2016.2637918","volume":"25","author":"Maroof N.","year":"2016","journal-title":"IEEE Trans. Very Large Scale Integr. (VLSI) Syst."},{"key":"S0218126623500780BIB017","doi-asserted-by":"crossref","first-page":"3326","DOI":"10.1109\/TCSI.2018.2813326","volume":"65","author":"Gupta S.","year":"2018","journal-title":"IEEE Trans. Circuits Syst. I: Regul. Pap."},{"key":"S0218126623500780BIB018","doi-asserted-by":"crossref","first-page":"2150243","DOI":"10.1142\/S0218126621502431","volume":"30","author":"Raikwal P.","year":"2021","journal-title":"J. Circuits Syst. Comput."},{"key":"S0218126623500780BIB019","doi-asserted-by":"crossref","first-page":"2634","DOI":"10.1109\/TVLSI.2016.2520490","volume":"24","author":"Ahmad S.","year":"2016","journal-title":"IEEE Trans. Very Large Scale Integr. (VLSI) Syst."},{"key":"S0218126623500780BIB020","first-page":"371","volume":"75","author":"Chandrakasan A. P.","year":"1992","journal-title":"IEICE Trans. Electron."},{"key":"S0218126623500780BIB021","doi-asserted-by":"crossref","first-page":"498","DOI":"10.1109\/5.371964","volume":"83","author":"Chandrakasan A. P.","year":"1995","journal-title":"Proc. IEEE"},{"key":"S0218126623500780BIB022","doi-asserted-by":"crossref","first-page":"945","DOI":"10.1007\/978-981-16-1089-9_73","volume-title":"Communication and Intelligent Systems","author":"Sachdeva A.","year":"2021"},{"key":"S0218126623500780BIB023","doi-asserted-by":"crossref","first-page":"631","DOI":"10.1109\/TED.2011.2181387","volume":"59","author":"Islam A.","year":"2012","journal-title":"IEEE Trans. Electron Devices"},{"key":"S0218126623500780BIB024","doi-asserted-by":"crossref","first-page":"1551","DOI":"10.1109\/TCSI.2020.2964903","volume":"67","author":"Cho K.","year":"2020","journal-title":"IEEE Trans. Circuits Syst. I: Regul. Pap."},{"key":"S0218126623500780BIB025","doi-asserted-by":"crossref","first-page":"114","DOI":"10.1049\/iet-cdt.2019.0234","volume":"14","author":"Lorenzo R.","year":"2020","journal-title":"IET Comput. Digit. Tech."},{"key":"S0218126623500780BIB026","doi-asserted-by":"crossref","first-page":"4745","DOI":"10.1109\/TED.2019.2942493","volume":"66","author":"Pal S.","year":"2019","journal-title":"IEEE Trans. Electron Devices"},{"key":"S0218126623500780BIB027","doi-asserted-by":"crossref","first-page":"337","DOI":"10.1109\/TDMR.2018.2839612","volume":"18","author":"Ahmad S.","year":"2018","journal-title":"IEEE Trans. Device Mater. Reliab."},{"issue":"1","key":"S0218126623500780BIB028","doi-asserted-by":"crossref","first-page":"187","DOI":"10.1007\/s10470-021-01898-9","volume":"109","author":"sachdeva A.","year":"2021","journal-title":"Analog Integr. Circuits Signal Process."},{"key":"S0218126623500780BIB029","doi-asserted-by":"crossref","first-page":"650","DOI":"10.1109\/JSSC.2008.2011972","volume":"44","author":"Chang I. J.","year":"2009","journal-title":"IEEE J. Solid-State Circuits"},{"key":"S0218126623500780BIB030","doi-asserted-by":"crossref","first-page":"276","DOI":"10.1109\/TSM.2017.2718029","volume":"30","author":"Yadav N.","year":"2017","journal-title":"IEEE Trans. Semicond. Manuf."},{"key":"S0218126623500780BIB031","doi-asserted-by":"crossref","first-page":"2578","DOI":"10.1109\/TCSI.2014.2332267","volume":"61","author":"Chiu Y.-W.","year":"2014","journal-title":"IEEE Trans. Circuits Syst. I: Regul. Pap."},{"key":"S0218126623500780BIB032","doi-asserted-by":"crossref","first-page":"4133","DOI":"10.1007\/s00542-016-3032-y","volume":"23","author":"Sinha A.","year":"2017","journal-title":"Microsyst. Technol."},{"issue":"5","key":"S0218126623500780BIB033","doi-asserted-by":"crossref","first-page":"2361","DOI":"10.3906\/elk-1801-272","volume":"26","author":"Mansore S.","year":"2018","journal-title":"Turk. J. Electr. Eng. Comput. Sci."},{"key":"S0218126623500780BIB034","doi-asserted-by":"crossref","first-page":"2314","DOI":"10.1002\/cta.2555","volume":"46","author":"Sharma V.","year":"2018","journal-title":"Int. J. Circuit Theory Appl."},{"key":"S0218126623500780BIB035","doi-asserted-by":"crossref","first-page":"718","DOI":"10.1016\/j.mejo.2013.04.007","volume":"44","author":"Wen L.","year":"2013","journal-title":"Microelectron. J."},{"key":"S0218126623500780BIB036","doi-asserted-by":"crossref","first-page":"2357","DOI":"10.1109\/TED.2014.2321295","volume":"61","author":"Pasandi G.","year":"2014","journal-title":"IEEE Trans. Electron Devices"},{"key":"S0218126623500780BIB037","doi-asserted-by":"crossref","first-page":"263","DOI":"10.1007\/s10470-020-01669-y","volume":"105","author":"Eslami N.","year":"2020","journal-title":"Analog Integr. Circuits Signal Process."},{"key":"S0218126623500780BIB038","doi-asserted-by":"crossref","first-page":"1556","DOI":"10.1016\/j.mejo.2014.09.006","volume":"45","author":"Farkhani H.","year":"2014","journal-title":"Microelectron. J."},{"key":"S0218126623500780BIB039","doi-asserted-by":"crossref","first-page":"3473","DOI":"10.1109\/TVLSI.2017.2746683","volume":"25","author":"Gupta S.","year":"2017","journal-title":"IEEE Trans. Very Large Scale Integr. (VLSI) Syst."},{"key":"S0218126623500780BIB040","doi-asserted-by":"crossref","first-page":"1783","DOI":"10.1007\/s00542-017-3570-y","volume":"25","author":"Roy C.","year":"2019","journal-title":"Microsyst. Technol."},{"key":"S0218126623500780BIB041","doi-asserted-by":"crossref","first-page":"287","DOI":"10.1007\/s00034-018-0858-9","volume":"38","author":"Naghizadeh S.","year":"2019","journal-title":"Circuits Syst. Signal Process."},{"key":"S0218126623500780BIB042","doi-asserted-by":"crossref","first-page":"1260","DOI":"10.1049\/el.2012.2612","volume":"48","author":"Wen L.","year":"2012","journal-title":"Electron. Lett."},{"key":"S0218126623500780BIB043","doi-asserted-by":"crossref","first-page":"42","DOI":"10.1049\/cds2.12006","volume":"15","author":"sachdeva A.","year":"2021","journal-title":"IET Circuits Devices Syst."},{"key":"S0218126623500780BIB044","doi-asserted-by":"crossref","first-page":"318","DOI":"10.1109\/TCSII.2006.877276","volume":"54","author":"Aly R. E.","year":"2007","journal-title":"IEEE Trans. Circuits Syst. II: Express Briefs"},{"key":"S0218126623500780BIB045","doi-asserted-by":"crossref","first-page":"584","DOI":"10.1049\/iet-cds.2018.5283","volume":"13","author":"Pal S.","year":"2019","journal-title":"IET Circuits Devices Syst."},{"issue":"3","key":"S0218126623500780BIB046","doi-asserted-by":"crossref","first-page":"2201","DOI":"10.1007\/s11277-021-08462-8","volume":"120","author":"Sachdeva A.","year":"2021","journal-title":"Wirel. Pers. Commun."},{"key":"S0218126623500780BIB047","doi-asserted-by":"crossref","first-page":"2303","DOI":"10.1109\/JSSC.2007.897148","volume":"42","author":"Kulkarni J. P.","year":"2007","journal-title":"IEEE J. Solid-State Circuits"},{"key":"S0218126623500780BIB048","doi-asserted-by":"crossref","first-page":"1000","DOI":"10.1109\/SPIN48934.2020.9071365","volume-title":"2020 7th Int. Conf. Signal Processing and Integrated Networks (SPIN)","author":"Sachdeva A.","year":"2020"},{"key":"S0218126623500780BIB049","doi-asserted-by":"crossref","first-page":"695","DOI":"10.1109\/JSSC.2010.2102571","volume":"46","author":"Lo C.-H.","year":"2011","journal-title":"IEEE J. Solid-State Circuits"},{"key":"S0218126623500780BIB050","doi-asserted-by":"crossref","first-page":"331","DOI":"10.1007\/s10470-018-1286-2","volume":"98","author":"Sharma V.","year":"2019","journal-title":"Analog Integr. Circuits Signal Process."},{"key":"S0218126623500780BIB051","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126620502060"},{"key":"S0218126623500780BIB052","doi-asserted-by":"crossref","first-page":"104445","DOI":"10.1016\/j.micpro.2022.104445","volume":"90","author":"Tomar V.","year":"2022","journal-title":"Microprocess. Microsyst."},{"key":"S0218126623500780BIB053","doi-asserted-by":"crossref","first-page":"1252","DOI":"10.1109\/TCSI.2010.2103154","volume":"58","author":"Anh-Tuan D.","year":"2011","journal-title":"IEEE Trans. Circuits Syst. I: Regul. Pap."},{"key":"S0218126623500780BIB054","doi-asserted-by":"crossref","first-page":"549","DOI":"10.1109\/TCAD.2015.2474408","volume":"35","author":"Pal S.","year":"2015","journal-title":"IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."},{"key":"S0218126623500780BIB055","doi-asserted-by":"crossref","first-page":"113503","DOI":"10.1016\/j.microrel.2019.113503","volume":"105","author":"Pal S.","year":"2020","journal-title":"Microelectron. Reliab."},{"key":"S0218126623500780BIB056","first-page":"1","volume-title":"2017 8th Int. Conf. Computing, Communication and Networking Technologies (ICCCNT)","author":"Tomar V.","year":"2017"},{"key":"S0218126623500780BIB057","doi-asserted-by":"crossref","first-page":"748","DOI":"10.1109\/JSSC.1987.1052809","volume":"22","author":"Seevinck E.","year":"1987","journal-title":"IEEE J. Solid-State Circuits"},{"key":"S0218126623500780BIB058","doi-asserted-by":"crossref","first-page":"2602","DOI":"10.1109\/ISSCC.2006.1696326","volume-title":"2006 IEEE Int. Solid State Circuits Conf.-Digest of Technical Papers","author":"Takeda K.","year":"2006"},{"key":"S0218126623500780BIB059","doi-asserted-by":"crossref","first-page":"97","DOI":"10.1109\/ICMTS.2007.374463","volume-title":"2007 IEEE Int. Conf. Microelectronic Test Structures","author":"Gierczynski N.","year":"2007"},{"key":"S0218126623500780BIB060","doi-asserted-by":"crossref","first-page":"146","DOI":"10.1109\/JSSC.2005.859025","volume":"41","author":"Zhang K.","year":"2005","journal-title":"IEEE J. Solid-State Circuits"},{"key":"S0218126623500780BIB061","first-page":"129","volume-title":"Proc. 13th Int. Symp. Low Power Electronics and Design (ISLPED\u201908)","author":"Wang J.","year":"2008"},{"key":"S0218126623500780BIB062","first-page":"136","volume":"31","author":"Dasgupta S.","year":"2017","journal-title":"IEEE Trans. Semicond. Manuf."},{"volume-title":"Robust SRAM Designs and Analysis","year":"2012","author":"Singh J.","key":"S0218126623500780BIB063"},{"key":"S0218126623500780BIB064","first-page":"191","volume-title":"2016 2nd Int. Conf. Communication Control and Intelligent Systems (CCIS)","author":"Sachdeva A.","year":"2016"},{"key":"S0218126623500780BIB065","doi-asserted-by":"crossref","first-page":"214","DOI":"10.23851\/mjs.v28i3.185","volume":"28","author":"Ibrahim S. N.","year":"2017","journal-title":"Al-Mustansiriyah J. Sci."},{"key":"S0218126623500780BIB066","doi-asserted-by":"crossref","first-page":"789","DOI":"10.1016\/j.mejo.2005.03.003","volume":"36","author":"Qin H.","year":"2005","journal-title":"Microelectron. J."},{"key":"S0218126623500780BIB067","doi-asserted-by":"crossref","first-page":"025001","DOI":"10.1088\/1674-4926\/38\/2\/025001","volume":"38","author":"Dasgupta S.","year":"2017","journal-title":"J. Semicond."},{"key":"S0218126623500780BIB068","doi-asserted-by":"crossref","first-page":"114","DOI":"10.1080\/03772063.2017.1393351","volume":"65","author":"Gupta R.","year":"2019","journal-title":"IETE J. Res."}],"container-title":["Journal of Circuits, Systems and Computers"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S0218126623500780","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,3,14]],"date-time":"2023-03-14T06:07:40Z","timestamp":1678774060000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/10.1142\/S0218126623500780"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,10,27]]},"references-count":66,"journal-issue":{"issue":"05","published-print":{"date-parts":[[2023,3,30]]}},"alternative-id":["10.1142\/S0218126623500780"],"URL":"https:\/\/doi.org\/10.1142\/s0218126623500780","relation":{},"ISSN":["0218-1266","1793-6454"],"issn-type":[{"type":"print","value":"0218-1266"},{"type":"electronic","value":"1793-6454"}],"subject":[],"published":{"date-parts":[[2022,10,27]]},"article-number":"2350078"}}