{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,30]],"date-time":"2025-07-30T13:37:31Z","timestamp":1753882651547,"version":"3.41.2"},"reference-count":51,"publisher":"World Scientific Pub Co Pte Ltd","issue":"07","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2023,5,15]]},"abstract":"<jats:p> For the first time, a new memristor emulator structure using a single four-terminal floating nullor (FTFN) and a transconductance stage has been presented with tunable circuit configuration. Along with that the circuit requires only a single grounded capacitance and two external MOS transistors to realize both incremental and decremental types of memductance functions. The use of the FTFN block has been demonstrated for the first time to build such a compact memristor emulator, which fully utilizes the employed circuit resources. The wide-band operating frequency range (1 kHz\u20133 MHz) is another attractive feature of the proposed emulator. Moreover, the mutation of the proposed memristor emulator into meminductor and memcapacitor emulators is also presented by the mutators based on FTFN. All the presented circuits have been tested by performing simulations using PSPICE with 0.18-[Formula: see text]m CMOS technology. The generated simulation results clearly show the ideal nonvolatile nature of the realized memristor, which has also been utilized in an op-amp-based circuit designed to exhibit associative learning phenomena. The proposed FTFN-based memristor has been implemented using commercially available ICs, LM13700, and AD844, and the generated PHL plot is discussed. <\/jats:p>","DOI":"10.1142\/s0218126623501232","type":"journal-article","created":{"date-parts":[[2022,10,7]],"date-time":"2022-10-07T17:38:56Z","timestamp":1665164336000},"source":"Crossref","is-referenced-by-count":4,"title":["New FTFN-Based Tunable Memristor Emulator Circuit and its Mutation to Meminductor and Memcapacitor Emulators"],"prefix":"10.1142","volume":"32","author":[{"given":"Kapil","family":"Bhardwaj","sequence":"first","affiliation":[{"name":"Department of Electronics and Communication Engineering, National Institute of Technology Jamshedpur, 831014 Jamshedpur, Jharkhand, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ravuri","family":"Narayana","sequence":"additional","affiliation":[{"name":"Department of Electronics and Communication Engineering, National Institute of Technology Jamshedpur, 831014 Jamshedpur, Jharkhand, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0963-2605","authenticated-orcid":false,"given":"Mayank","family":"Srivastava","sequence":"additional","affiliation":[{"name":"Department of Electronics and Communication Engineering, National Institute of Technology Jamshedpur, 831014 Jamshedpur, Jharkhand, India"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2022,11,19]]},"reference":[{"key":"S0218126623501232BIB001","doi-asserted-by":"crossref","first-page":"507","DOI":"10.1109\/TCT.1971.1083337","volume":"18","author":"Chua L. 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