{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,21]],"date-time":"2026-04-21T04:00:43Z","timestamp":1776744043727,"version":"3.51.2"},"reference-count":25,"publisher":"World Scientific Pub Co Pte Ltd","issue":"15","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2024,10]]},"abstract":"<jats:p> This study proposes a novel 6-transistor bootstrapped switch with minimized sampling and holding error obtained through sampling window error analysis for SAR ADC design. The proposed switch design strategically mitigates channel charge injection and minimizes the input signal dependency of on-resistance by optimizing its sizing parameters. To counteract channel charge effects, dummy NMOS and PMOS components are judiciously employed, culminating in a substantial improvement in the effective number of bits (ENOB). The complete analysis of the proposed circuit is done using the Cadence Virtuoso SCL 0.18 [Formula: see text]m CMOS process. For a 51.514 kHz sinusoidal 1 V peak-to-peak differential input signal with a 1 MSPs clock speed, the proposed circuit achieves 2.0141 mV maximum sampling window error, 0.131 [Formula: see text]W power consumption, 84.67 dB signal-to-noise ratio (SNR), 84.67 signal-to-noise and distortion (SINAD) ratio and 86.02 dB spurious-free dynamic range (SFDR), which produces 13.77 bits ENOB. For the impacts of process variations and mismatch on switch performance, a comprehensive 500-point Monte Carlo (MC) simulation of the proposed bootstrap switch is conducted in this study. Post-layout results show that the proposed circuit is suitable for IoT applications. <\/jats:p>","DOI":"10.1142\/s0218126624502645","type":"journal-article","created":{"date-parts":[[2024,3,28]],"date-time":"2024-03-28T15:03:20Z","timestamp":1711638200000},"source":"Crossref","is-referenced-by-count":9,"title":["A Novel Bootstrapped CMOS Switch with Minimized Sampling and Holding Error Using Sampling Window Error Analysis"],"prefix":"10.1142","volume":"33","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-1192-9168","authenticated-orcid":false,"given":"Buddhi Prakash","family":"Sharma","sequence":"first","affiliation":[{"name":"Department of Electrical & Electronics Engineering, Birla Institute of Technology and Science, Pilani, Rajasthan 333031, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0009-0354-0014","authenticated-orcid":false,"given":"Chandu","family":"Mysakshi","sequence":"additional","affiliation":[{"name":"Department of Electrical & Electronics Engineering, Birla Institute of Technology and Science, Pilani, Rajasthan 333031, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shivam","family":"Kumar","sequence":"additional","affiliation":[{"name":"Department of Electrical & Electronics Engineering, Birla Institute of Technology and Science, Pilani, Rajasthan 333031, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6320-556X","authenticated-orcid":false,"given":"Anu","family":"Gupta","sequence":"additional","affiliation":[{"name":"Department of Electrical & Electronics Engineering, Birla Institute of Technology and Science, Pilani, Rajasthan 333031, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chandra","family":"Shekhar","sequence":"additional","affiliation":[{"name":"Department of Electrical & Electronics Engineering, Birla Institute of Technology and Science, Pilani, Rajasthan 333031, India"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2024,4,25]]},"reference":[{"key":"S0218126624502645BIB001","doi-asserted-by":"publisher","DOI":"10.1002\/cta.2958"},{"key":"S0218126624502645BIB002","doi-asserted-by":"publisher","DOI":"10.1023\/B:ALOG.0000016641.83563.96"},{"key":"S0218126624502645BIB003","doi-asserted-by":"publisher","DOI":"10.1109\/NGCT.2016.7877392"},{"key":"S0218126624502645BIB004","doi-asserted-by":"publisher","DOI":"10.1007\/978-981-99-0639-0_6"},{"key":"S0218126624502645BIB005","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2018.01.006"},{"key":"S0218126624502645BIB006","doi-asserted-by":"publisher","DOI":"10.1109\/MCOM.2016.7452270"},{"key":"S0218126624502645BIB007","doi-asserted-by":"publisher","DOI":"10.1109\/UPCON56432.2022.9986363"},{"key":"S0218126624502645BIB008","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2019.104680"},{"key":"S0218126624502645BIB009","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2822823"},{"key":"S0218126624502645BIB010","doi-asserted-by":"publisher","DOI":"10.1142\/S0218126621501437"},{"key":"S0218126624502645BIB011","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2021.3137540"},{"key":"S0218126624502645BIB012","doi-asserted-by":"publisher","DOI":"10.1142\/S021812661850130X"},{"key":"S0218126624502645BIB013","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2742523"},{"key":"S0218126624502645BIB014","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2023.105695"},{"key":"S0218126624502645BIB015","first-page":"12","volume":"7","author":"Razavi B.","year":"2015","journal-title":"IEEE Solid-State Circuits Mag."},{"key":"S0218126624502645BIB016","doi-asserted-by":"publisher","DOI":"10.1049\/el.2014.3922"},{"key":"S0218126624502645BIB017","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2005.852927"},{"key":"S0218126624502645BIB018","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2922726"},{"key":"S0218126624502645BIB019","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2016.2631723"},{"key":"S0218126624502645BIB020","doi-asserted-by":"publisher","DOI":"10.1016\/j.aeue.2019.152864"},{"key":"S0218126624502645BIB021","first-page":"266","volume":"4","author":"Rashtian M.","year":"2008","journal-title":"World Appl. 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