{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,15]],"date-time":"2025-08-15T02:28:00Z","timestamp":1755224880081,"version":"3.43.0"},"reference-count":13,"publisher":"World Scientific Pub Co Pte Ltd","issue":"16","funder":[{"name":"the Bulgarian National Science Fund","award":["KP-06-H37\/32"],"award-info":[{"award-number":["KP-06-H37\/32"]}]},{"DOI":"10.13039\/501100005995","name":"Bulgarian Academy of Sciences","doi-asserted-by":"crossref","award":["IC-PL\/03\/2024-2025"],"award-info":[{"award-number":["IC-PL\/03\/2024-2025"]}],"id":[{"id":"10.13039\/501100005995","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2025,11,15]]},"abstract":"<jats:p> Voltage ramp and constant voltage stress (CVS) measurements have been implemented to investigate the breakdown (BD) processes in charge trapping (CT) memory cells with atomic layer deposited (ALD) HfO<jats:sub>2<\/jats:sub>\/Al<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> nanolaminated stacks. The impact of tunneling oxide thickness as well as post-deposition annealing of memory stacks on the BD characteristics is also studied. The redistribution of the electric field in different parts of the stack due to CT has been calculated and taken into consideration when discussing the BD phenomena. The results imply that there are two BD mechanisms in the charge-trapping stacks \u00a0\u2014 current-driven BD in the high-k part of the stack and voltage-driven BD of the thin tunneling SiO<jats:sub>2<\/jats:sub>. Each of these mechanisms could dominate depending on the measurement mode (voltage ramp or CVS) and\/or trapped charge in the structure. The electric BD is accompanied by a positive charge build-up and generation of interface states at SiO<jats:sub>2<\/jats:sub>\/Si interface. Annealing in O<jats:sub>2<\/jats:sub> suppresses these processes. <\/jats:p>","DOI":"10.1142\/s0218126625410038","type":"journal-article","created":{"date-parts":[[2024,10,17]],"date-time":"2024-10-17T22:08:59Z","timestamp":1729202939000},"source":"Crossref","is-referenced-by-count":0,"title":["Impact of Trapped Charge on the Breakdown Phenomena in HfO<sub>2<\/sub>\/Al<sub>2<\/sub>O<sub>3<\/sub> \u2014 Based Memory Capacitors"],"prefix":"10.1142","volume":"34","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-9299-7148","authenticated-orcid":false,"given":"D.","family":"Spassov","sequence":"first","affiliation":[{"name":"Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784, Bulgaria"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4409-1915","authenticated-orcid":false,"given":"A.","family":"Paskaleva","sequence":"additional","affiliation":[{"name":"Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784, Bulgaria"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6158-5258","authenticated-orcid":false,"given":"E.","family":"Guziewicz","sequence":"additional","affiliation":[{"name":"Institute of Physics, Polish Academy of Sciences, Al. Lotnik\u00f3w 32\/46 Warsaw 02-668, Poland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tz.","family":"Ivanov","sequence":"additional","affiliation":[{"name":"Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784, Bulgaria"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"T.","family":"Stanchev","sequence":"additional","affiliation":[{"name":"Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784, Bulgaria"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3889-9595","authenticated-orcid":false,"given":"V.","family":"Davidovi\u0107","sequence":"additional","affiliation":[{"name":"Faculty of Electronic Engineering, University of Ni\u0161, Aleksandra Medvedeva 14, Ni\u0161 18000, Serbia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-9510-7465","authenticated-orcid":false,"given":"S.","family":"Veljkovi\u0107","sequence":"additional","affiliation":[{"name":"Faculty of Electronic Engineering, University of Ni\u0161, Aleksandra Medvedeva 14, Ni\u0161 18000, Serbia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8981-637X","authenticated-orcid":false,"given":"N.","family":"Mitrovi\u0107","sequence":"additional","affiliation":[{"name":"Faculty of Electronic Engineering, University of Ni\u0161, Aleksandra Medvedeva 14, Ni\u0161 18000, Serbia"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0214-2606","authenticated-orcid":false,"given":"D.","family":"Dankovi\u0107","sequence":"additional","affiliation":[{"name":"Faculty of Electronic Engineering, University of Ni\u0161, Aleksandra Medvedeva 14, Ni\u0161 18000, Serbia"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2024,12,17]]},"reference":[{"key":"S0218126625410038BIB002","doi-asserted-by":"publisher","DOI":"10.3390\/ma7075117"},{"key":"S0218126625410038BIB003","unstructured":"P. A. Cox ,  Transition Metal Oxides: An Introduction to their Electronic Structure and Properties ( Oxford University Press,  Oxford,  1992), p.  4."},{"key":"S0218126625410038BIB004","first-page":"98","volume":"6","author":"Mehta D. N.","year":"2013","journal-title":"Intern. J. Comput. Sci. App."},{"key":"S0218126625410038BIB005","doi-asserted-by":"publisher","DOI":"10.1063\/1.3531559"},{"key":"S0218126625410038BIB006","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201700854"},{"key":"S0218126625410038BIB007","doi-asserted-by":"publisher","DOI":"10.3390\/ma15186285"},{"key":"S0218126625410038BIB008","doi-asserted-by":"publisher","DOI":"10.3390\/nano13172456"},{"first-page":"63","volume-title":"Proc. 2023 IEEE 33rd Int. Conf. Microelectron. MIEL2023","author":"Spassov D.","key":"S0218126625410038BIB009"},{"key":"S0218126625410038BIB011","doi-asserted-by":"publisher","DOI":"10.1098\/rspa.1928.0091"},{"key":"S0218126625410038BIB012","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(90)90017-9"},{"key":"S0218126625410038BIB013","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2008.10.005"},{"key":"S0218126625410038BIB014","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.877700"},{"key":"S0218126625410038BIB015","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2057239"}],"container-title":["Journal of Circuits, Systems and Computers"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S0218126625410038","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,8,13]],"date-time":"2025-08-13T02:30:18Z","timestamp":1755052218000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/10.1142\/S0218126625410038"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,12,17]]},"references-count":13,"journal-issue":{"issue":"16","published-print":{"date-parts":[[2025,11,15]]}},"alternative-id":["10.1142\/S0218126625410038"],"URL":"https:\/\/doi.org\/10.1142\/s0218126625410038","relation":{},"ISSN":["0218-1266","1793-6454"],"issn-type":[{"type":"print","value":"0218-1266"},{"type":"electronic","value":"1793-6454"}],"subject":[],"published":{"date-parts":[[2024,12,17]]},"article-number":"2541003"}}