{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,30]],"date-time":"2025-12-30T11:04:50Z","timestamp":1767092690807,"version":"3.41.2"},"reference-count":29,"publisher":"World Scientific Pub Co Pte Ltd","issue":"05","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2025,3,30]]},"abstract":"<jats:p> In this work, a 3-D model is presented for the comparative analysis of different Figures of merit (FOM) for MgZnO\/CdZnO and AlN\/Ga<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> Gate All Around Field Effect Transistor (GAA-FET). It is noticed within the analyzed device geometries that for different values of channel length (CL), temperature (T) and channel height (H); the peak magnitude of transconductance ([Formula: see text]) for ZnO-based GAA-FET is higher than Ga<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>-based GAA-FET relatively by 0.996 for CL = 20[Formula: see text]nm and [Formula: see text] = 1[Formula: see text]V. The peak magnitude of second and third-order voltage intercept points, i.e., VIP<jats:sub>2<\/jats:sub>, VIP<jats:sub>3<\/jats:sub> and third-order intercept input power (IIP<jats:sub>3<\/jats:sub>) for ZnO-based GAA-FET is noticed to be higher than Ga<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>-based GAA-FET relatively by 0.89, 0.59 and 0.80, respectively, for CL of 30 nm at [Formula: see text] = 1[Formula: see text]V. On the contrary, the Ga<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub>-based GAA-FET is analyzed to exhibit lower peak magnitude of first and second-order derivatives of [Formula: see text], i.e., [Formula: see text], [Formula: see text] and third-order intermodulation distortion (IMD<jats:sub>3<\/jats:sub>) relatively by 0.94, 0.66 and 3.59[Formula: see text]dB, respectively, for CL = 20[Formula: see text]nm and [Formula: see text] = 1[Formula: see text]V as compared to Ga<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> based GAA-FET. It is noticed that the AlN\/[Formula: see text]-Ga<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> GAA-FET provides a lower magnitude of output conductance than MgZnO\/CdZnO GAA-FET, thus highlighting it as a potential contender for analog circuit applications. <\/jats:p>","DOI":"10.1142\/s0218126625501257","type":"journal-article","created":{"date-parts":[[2024,10,18]],"date-time":"2024-10-18T02:08:59Z","timestamp":1729217339000},"source":"Crossref","is-referenced-by-count":1,"title":["Comparative Analysis of AlN\/\u03b2-Ga<sub>2<\/sub>O<sub>3<\/sub> and MgZnO\/CdZnO Gate All Around Field Effect Transistors (GAA-FETs) for Analog\/RF Applications"],"prefix":"10.1142","volume":"34","author":[{"given":"Yogesh Kumar","family":"Verma","sequence":"first","affiliation":[{"name":"School of Electronics and Electrical Engineering, Lovely Professional University, Jalandhar, Punjab 144411, 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