{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,30]],"date-time":"2025-07-30T14:10:40Z","timestamp":1753884640179,"version":"3.41.2"},"reference-count":18,"publisher":"World Scientific Pub Co Pte Ltd","issue":"12","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2025,8]]},"abstract":"<jats:p> A new high performance tunable Voltage Differencing Inverting Buffered Amplifier (VDIBA) is proposed in this paper. The proposed structure of VDIBA includes partial positive feedback (PPF) to enhance its transconductance, as well as an adaptive biasing technique to decrease standby power consumption while maintaining the circuit\u2019s dynamic behavior. In this novel structure of VDIBA, a squarer circuit is used to provide biasing current. The load enhancement technique is used to provide PPF. The enhanced performance of the proposed VDIBA is validated using SPICE simulation software and 180[Formula: see text]nm technology parameters. The validation process confirmed that the proposed VDIBA can achieve an enhanced transconductance ([Formula: see text]) of up to 3.1[Formula: see text]mS with a 3[Formula: see text]dB bandwidth of 437[Formula: see text]MHz at a biasing current of 50[Formula: see text]\u00a0[Formula: see text]A, which is an increment of 118% in [Formula: see text] keeping BW at par approximately. The proposed structure exhibits improvements in DC gain, linearity, and power efficiency over the conventional structure. The THD of the proposed structure is observed to be 0.49%. <\/jats:p>","DOI":"10.1142\/s0218126625502792","type":"journal-article","created":{"date-parts":[[2025,3,1]],"date-time":"2025-03-01T04:48:51Z","timestamp":1740804531000},"source":"Crossref","is-referenced-by-count":0,"title":["A New CMOS Realization of High Performance Adaptive Biased Voltage Differencing Inverting Buffered Amplifier"],"prefix":"10.1142","volume":"34","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-0018-4412","authenticated-orcid":false,"given":"Priyanka","family":"Gupta","sequence":"first","affiliation":[{"name":"Department of Electronics and Communication Engineering, Bharati Vidyapeeth\u2019s College of Engineering, New Delhi, India"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-5101-2998","authenticated-orcid":false,"given":"Saji M.","family":"Antony","sequence":"additional","affiliation":[{"name":"Department of Electronics and Communication Engineering, Bharati Vidyapeeth\u2019s College of Engineering, New Delhi, India"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-1364-3117","authenticated-orcid":false,"given":"Diksha","family":"Jain","sequence":"additional","affiliation":[{"name":"Department of Electronics and Communication Engineering, Bharati Vidyapeeth\u2019s College of Engineering, New Delhi, India"}]}],"member":"219","published-online":{"date-parts":[[2025,5,12]]},"reference":[{"key":"S0218126625502792BIB001","first-page":"15","volume":"17","author":"Biolek D.","year":"2008","journal-title":"Radioengineering"},{"key":"S0218126625502792BIB002","doi-asserted-by":"publisher","DOI":"10.1049\/PBCS002E"},{"key":"S0218126625502792BIB003","volume-title":"Microelectronic Circuits","author":"Sedra A. 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