{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,13]],"date-time":"2026-03-13T08:45:58Z","timestamp":1773391558325,"version":"3.50.1"},"reference-count":20,"publisher":"World Scientific Pub Co Pte Ltd","issue":"09","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[2026,5,30]]},"abstract":"<jats:p>This paper presents a broadband, highly linear, gain-compensated GaN low-noise amplifier (LNA) for Ground Penetrating Radar (GPR) applications. The LNA, based on RLC feedback approach, was designed to work from 20[Formula: see text]MHz to 2[Formula: see text]GHz. Due to the need for high-power robustness in practical GPR scenarios, the LNA is designed with a 0.25[Formula: see text] [Formula: see text]m GaN HEMT technology, which has high bandgap energy and breakdown voltage. Common source topology with RLC feedback is utilized to achieve broadband gain flatness with [Formula: see text]0.5[Formula: see text]dB variation. Self-bias topology with a single supply voltage is chosen to eliminate extra gate bias circuitry. Post-layout simulations were performed including device, package and routing parasitics. The LNA achieves less than 1.3[Formula: see text]dB NF with a 16[Formula: see text]dB power gain. Input [Formula: see text] and output [Formula: see text] return losses are below [Formula: see text]10[Formula: see text]dB. OP[Formula: see text] and OIP3 are better than [Formula: see text]27[Formula: see text]dBm and [Formula: see text]40[Formula: see text]dBm within the bandwidth, respectively. Total power dissipation is approximately 1.9[Formula: see text]W from a 12[Formula: see text]V supply.<\/jats:p>","DOI":"10.1142\/s0218126626501070","type":"journal-article","created":{"date-parts":[[2026,1,10]],"date-time":"2026-01-10T03:33:14Z","timestamp":1768015994000},"source":"Crossref","is-referenced-by-count":0,"title":["A Highly Linear 0.02\u20132 GHz RLC Feedback LNA MMIC with 1.3 dB NF in 0.25 \u03bcm GaN HEMT Technology for GPR"],"prefix":"10.1142","volume":"35","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7041-8352","authenticated-orcid":false,"given":"Ertan","family":"Zencir","sequence":"first","affiliation":[{"name":"Department of Electrical and Electronics Engineering, University of Turkish Aeronautical Association, Etimesgut 06790, Ankara, Turkey"},{"name":"Informatics and Information Security Research Center, TUBITAK, Gebze 41470, Kocaeli, Turkey"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2026,2,11]]},"reference":[{"key":"S0218126626501070BIB001","first-page":"191","volume-title":"Proc. of the Tenth Int. 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