{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,2]],"date-time":"2022-04-02T04:08:10Z","timestamp":1648872490987},"reference-count":0,"publisher":"World Scientific Pub Co Pte Lt","issue":"01","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[1995,3]]},"abstract":"<jats:p> An equation for the i<jats:sub>K<\/jats:sub>-v<jats:sub>AK<\/jats:sub> static forward characteristic of an MOS-controlled thyristor (MCT) is derived using a four-transistor equivalent model of the device. The Ebers\u2013Moll large-signal model is used for n-p-n and p-n-p bipolar transistors. The equation is similar to that for forward-biased diodes. The equivalent saturation current of the MCT is a function of both the saturation currents and the forward and reverse current gains of the n-p-n and p-n-p transistors. Effects of these parameters on the MCT equivalent saturation current are investigated. Voltages and currents of all transistors that form the MCT equivalent model are simulated using SPICE to explain the behavior of the device in the forward-biased region. Finally, the experimental i<jats:sub>K<\/jats:sub>-v<jats:sub>AK<\/jats:sub> characteristics are presented. The calculated and measured i<jats:sub>K<\/jats:sub>-v<jats:sub>AK<\/jats:sub> characteristics were in good agreement. The measured ON-voltage drop was 1.6 V at a cathode current of 200 A and a temperature of 300 K. MCTs are especially useful power devices for electric car applications. <\/jats:p>","DOI":"10.1142\/s0218126695000060","type":"journal-article","created":{"date-parts":[[2004,11,12]],"date-time":"2004-11-12T06:59:25Z","timestamp":1100242765000},"page":"65-80","source":"Crossref","is-referenced-by-count":0,"title":["STATIC CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS \u2014 ANALYSIS, SIMULATION, AND EXPERIMENTAL RESULTS"],"prefix":"10.1142","volume":"05","author":[{"given":"DARIUSZ","family":"CZARKOWSKI","sequence":"first","affiliation":[{"name":"University of Florida, Department of Electrical Engineering, Gainesville, FL 32611, U.S.A."}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"MARIAN K.","family":"KAZIMIERCZUK","sequence":"additional","affiliation":[{"name":"Wright State University, Department of Electrical Engineering, Dayton, OH 45435, U.S.A."}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2011,11,21]]},"container-title":["Journal of Circuits, Systems and Computers"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S0218126695000060","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,8,6]],"date-time":"2019-08-06T22:47:54Z","timestamp":1565131674000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/abs\/10.1142\/S0218126695000060"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1995,3]]},"references-count":0,"journal-issue":{"issue":"01","published-online":{"date-parts":[[2011,11,21]]},"published-print":{"date-parts":[[1995,3]]}},"alternative-id":["10.1142\/S0218126695000060"],"URL":"https:\/\/doi.org\/10.1142\/s0218126695000060","relation":{},"ISSN":["0218-1266","1793-6454"],"issn-type":[{"value":"0218-1266","type":"print"},{"value":"1793-6454","type":"electronic"}],"subject":[],"published":{"date-parts":[[1995,3]]}}}