{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,3,29]],"date-time":"2022-03-29T09:16:44Z","timestamp":1648545404508},"reference-count":0,"publisher":"World Scientific Pub Co Pte Lt","issue":"03","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J CIRCUIT SYST COMP"],"published-print":{"date-parts":[[1995,9]]},"abstract":"<jats:p> Experimental results are given for a PMOS-controlled thyristor (PMCT). The static I<jats:sub>A<\/jats:sub>-V<jats:sub>AK<\/jats:sub> characteristics of a PMCT were measured using a programmable high power curve tracer for both forward and reverse anode-to-cathode voltage V<jats:sub>AK<\/jats:sub> at different temperatures. The characteristics are similar to the I<jats:sub>D<\/jats:sub>-V<jats:sub>D<\/jats:sub> characteristics of typical p-n junction diodes. The device has a low forward voltage drop at high-current levels, e.g. V<jats:sub>F(AK)<\/jats:sub> = 1.6 V at I<jats:sub>A<\/jats:sub> = 200 A . The dynamic behavior of the PMCT was measured in a single switch configuration under resistive loading. The transient waveforms of anode current i<jats:sub>A<\/jats:sub>, gate current i<jats:sub>G<\/jats:sub>, anode-to-cathode voltage v<jats:sub>AK<\/jats:sub>, and gate-to-anode drive voltage v<jats:sub>GA<\/jats:sub> were observed at turn-on and turn-off for power levels up to 5 kW. The measured turn-on time was 0.3 \u03bcs and the measured turn-off time was 2.2 \u03bcs. The switching power loss and the conduction power loss were 3 W and 18 W, respectively. <\/jats:p>","DOI":"10.1142\/s0218126695000242","type":"journal-article","created":{"date-parts":[[2004,11,12]],"date-time":"2004-11-12T11:59:25Z","timestamp":1100260765000},"page":"393-410","source":"Crossref","is-referenced-by-count":0,"title":["EXPERIMENTAL STATIC AND DYNAMIC CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS FOR RESISTIVE LOADS"],"prefix":"10.1142","volume":"05","author":[{"given":"MARIAN K.","family":"KAZIMIERCZUK","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, Wright State University, Dayton, OH 45435, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"NANDAKUMAR","family":"THIRUNARAYAN","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Wright State University, Dayton, OH 45435, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"BICK T.","family":"NGUYEN","sequence":"additional","affiliation":[{"name":"Wright-Patterson AFB, Dayton, OH 45433-6563, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"JOSEPH A.","family":"WEIMER","sequence":"additional","affiliation":[{"name":"Wright-Patterson AFB, Dayton, OH 45433-6563, USA"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2011,11,21]]},"container-title":["Journal of Circuits, Systems and Computers"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S0218126695000242","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,8,7]],"date-time":"2019-08-07T02:47:21Z","timestamp":1565146041000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/abs\/10.1142\/S0218126695000242"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1995,9]]},"references-count":0,"journal-issue":{"issue":"03","published-online":{"date-parts":[[2011,11,21]]},"published-print":{"date-parts":[[1995,9]]}},"alternative-id":["10.1142\/S0218126695000242"],"URL":"https:\/\/doi.org\/10.1142\/s0218126695000242","relation":{},"ISSN":["0218-1266","1793-6454"],"issn-type":[{"value":"0218-1266","type":"print"},{"value":"1793-6454","type":"electronic"}],"subject":[],"published":{"date-parts":[[1995,9]]}}}