{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,7,3]],"date-time":"2023-07-03T21:41:12Z","timestamp":1688420472674},"reference-count":30,"publisher":"World Scientific Pub Co Pte Lt","issue":"02","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Int. J. Bifurcation Chaos"],"published-print":{"date-parts":[[2015,2]]},"abstract":"<jats:p> Semi-insulating Gallium Arsenide ( SI-GaAs ) samples experimentally show, under high electric fields and even at room temperature, negative differential conductivity in N-shaped form (NNDC). Since the most consolidated model for n-GaAs , namely, \"the model\", proposed by E. Sch\u00f6ll was not capable to generate the NNDC curve for SI-GaAs , in this work we have proposed an alternative model. The model proposed, \"the two-valley model\" is based on the minimal set of generation-recombination equations for two valleys inside of the conduction band, and an equation for the drift velocity as a function of the applied electric field, that covers the physical properties of the nonlinear electrical conduction of the SI-GaAs system. The \"two-valley model\" was capable to generate theoretically the NNDC region for the first time, and with that, we were able to build a high resolution parameter-space of the periodicity (PSP) using a Periodicity-Detection (PD) routine. In the parameter-space were observed self-organized periodic structures immersed in chaotic regions. The complex regions are presented in a \"shrimp\" shape rotated around a focal point, which forms in large-scale a \"snail shell\" shape, with intricate connections between different \"shrimps\". The knowledge of detailed information on parameter spaces is crucial to localize wide regions of smooth and continuous chaos. <\/jats:p>","DOI":"10.1142\/s0218127415300049","type":"journal-article","created":{"date-parts":[[2015,2,26]],"date-time":"2015-02-26T02:18:11Z","timestamp":1424917091000},"page":"1530004","source":"Crossref","is-referenced-by-count":3,"title":["High Resolution Parameter-Space from a Two-Level Model on Semi-Insulating <font>GaAs<\/font>"],"prefix":"10.1142","volume":"25","author":[{"given":"S. L.","family":"Da Silva","sequence":"first","affiliation":[{"name":"Departamento de F\u00edsica, Instituto de Ci\u00eancias Exatas, Universidade Federal de Minas Gerais, Caixa Postal 702, 30123-970 Belo Horizonte, Brazil"},{"name":"Instituto Federal do Esp\u00edrito Santo, Campus Vit\u00f3ria, 29040-780 Vit\u00f3ria, Brazil"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"E. R.","family":"Viana","sequence":"additional","affiliation":[{"name":"Departamento de F\u00edsica, Instituto de Ci\u00eancias Exatas, Universidade Federal de Minas Gerais, Caixa Postal 702, 30123-970 Belo Horizonte, Brazil"},{"name":"Departamento de F\u00edsica, Universidade Tecnol\u00f3gica Federal do Paran\u00e1, 80230-901 Curitiba, Brazil"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"A. G.","family":"De Oliveira","sequence":"additional","affiliation":[{"name":"Departamento de F\u00edsica, Instituto de Ci\u00eancias Exatas, Universidade Federal de Minas Gerais, Caixa Postal 702, 30123-970 Belo Horizonte, Brazil"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G. M.","family":"Ribeiro","sequence":"additional","affiliation":[{"name":"Departamento de F\u00edsica, Instituto de Ci\u00eancias Exatas, Universidade Federal de Minas Gerais, Caixa Postal 702, 30123-970 Belo Horizonte, Brazil"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R. 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