{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,24]],"date-time":"2026-01-24T19:40:42Z","timestamp":1769283642975,"version":"3.49.0"},"reference-count":29,"publisher":"World Scientific Pub Co Pte Ltd","issue":"09","funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61473177"],"award-info":[{"award-number":["61473177"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002858","name":"The China Postdoctoral Science Foundation","doi-asserted-by":"crossref","award":["2015M582114"],"award-info":[{"award-number":["2015M582114"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"crossref"}]},{"name":"The Shandong Postdoctoral Special Foundation","award":["201502017"],"award-info":[{"award-number":["201502017"]}]},{"name":"The Qingdao Science and Technology Plan Project","award":["15-9-1-39-jch"],"award-info":[{"award-number":["15-9-1-39-jch"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Int. J. Bifurcation Chaos"],"published-print":{"date-parts":[[2017,8]]},"abstract":"<jats:p>The Sr[Formula: see text]Ba[Formula: see text]TiO<jats:sub>3<\/jats:sub>(SBT) memristor is prepared using the monolayer Sr[Formula: see text]Ba[Formula: see text]TiO<jats:sub>3<\/jats:sub>nano-film structure. In order to apply it into the nonlinear circuit design, the SBT memristor is modeled in the paper. The voltage-controlled physical model of the SBT memristor is established based on its working mechanism. Due to the difficulty in determining the accurate parameters of the voltage-controlled physical model, a flux-controlled mathematical model of the SBT memristor is proposed, and its equivalence relation with the voltage-controlled physical model is proved. Moreover, the parameters of the flux-controlled mathematical model are determined by means of the quadratic polynomial interpolation method using the experimentally measured voltage and current data of the SBT memristor. The simulated [Formula: see text]\u2013[Formula: see text] characteristic curve using the flux-controlled mathematical model coincides well with the measured [Formula: see text]\u2013[Formula: see text] characteristic curves. The result indicates that the flux-controlled mathematical model with the definite parameters can be used to characterize the behaviors of the physical SBT memristor and guide its application to nonlinear circuit design.<\/jats:p>","DOI":"10.1142\/s0218127417501486","type":"journal-article","created":{"date-parts":[[2017,9,11]],"date-time":"2017-09-11T03:15:58Z","timestamp":1505099758000},"page":"1750148","source":"Crossref","is-referenced-by-count":24,"title":["Establishment of Physical and Mathematical Models for Sr0.95Ba0.05TiO<sub>3<\/sub>Memristor"],"prefix":"10.1142","volume":"27","author":[{"given":"Yuman","family":"Zhang","sequence":"first","affiliation":[{"name":"College of Electrical Engineering and Automation, Shandong University of Science and Technology, Qingdao 266590, P. R. China"}]},{"given":"Gang","family":"Dou","sequence":"additional","affiliation":[{"name":"College of Electrical Engineering and Automation, Shandong University of Science and Technology, Qingdao 266590, P. R. China"}]},{"given":"Zhao","family":"Sun","sequence":"additional","affiliation":[{"name":"College of Electrical Engineering and Automation, Shandong University of Science and Technology, Qingdao 266590, P. R. China"}]},{"given":"Mei","family":"Guo","sequence":"additional","affiliation":[{"name":"College of Electrical Engineering and Automation, Shandong University of Science and Technology, Qingdao 266590, P. R. China"}]},{"given":"Yuxia","family":"Li","sequence":"additional","affiliation":[{"name":"College of Electrical Engineering and Automation, Shandong University of Science and Technology, Qingdao 266590, P. R. China"}]}],"member":"219","published-online":{"date-parts":[[2017,9,10]]},"reference":[{"key":"S0218127417501486BIB001","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2016.2622225"},{"key":"S0218127417501486BIB002","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2014.2359717"},{"key":"S0218127417501486BIB003","first-page":"210","volume":"18","author":"Biolek Z.","year":"2009","journal-title":"Radioengin."},{"key":"S0218127417501486BIB004","doi-asserted-by":"publisher","DOI":"10.1109\/TCT.1971.1083337"},{"key":"S0218127417501486BIB005","doi-asserted-by":"publisher","DOI":"10.1016\/j.neucom.2012.01.011"},{"key":"S0218127417501486BIB006","doi-asserted-by":"publisher","DOI":"10.1142\/S0218127408022354"},{"key":"S0218127417501486BIB007","doi-asserted-by":"publisher","DOI":"10.1142\/S0218127414300158"},{"key":"S0218127417501486BIB008","first-page":"1297","volume":"10","author":"Jo S. H.","year":"2010","journal-title":"IEEE Trans. Circuit Th."},{"key":"S0218127417501486BIB009","doi-asserted-by":"publisher","DOI":"10.1088\/0143-0807\/30\/4\/001"},{"key":"S0218127417501486BIB010","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2012.2215714"},{"key":"S0218127417501486BIB011","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2015.2433536"},{"key":"S0218127417501486BIB012","doi-asserted-by":"publisher","DOI":"10.1142\/S0218127413502040"},{"key":"S0218127417501486BIB013","doi-asserted-by":"publisher","DOI":"10.1038\/srep01619"},{"key":"S0218127417501486BIB014","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201500125"},{"key":"S0218127417501486BIB015","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.6b11465"},{"key":"S0218127417501486BIB016","doi-asserted-by":"publisher","DOI":"10.1021\/am403497y"},{"key":"S0218127417501486BIB017","doi-asserted-by":"publisher","DOI":"10.1063\/1.3236506"},{"key":"S0218127417501486BIB018","doi-asserted-by":"publisher","DOI":"10.1038\/nature14441"},{"key":"S0218127417501486BIB019","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2158004"},{"key":"S0218127417501486BIB020","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2016.2572726"},{"key":"S0218127417501486BIB021","doi-asserted-by":"publisher","DOI":"10.1038\/nature06932"},{"key":"S0218127417501486BIB022","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/22\/25\/254003"},{"key":"S0218127417501486BIB023","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2645946"},{"key":"S0218127417501486BIB024","doi-asserted-by":"crossref","first-page":"1704","DOI":"10.1109\/TFUZZ.2013.2294855","volume":"22","author":"Wen S.","year":"2013","journal-title":"IEEE Trans. Fuzzy Syst."},{"key":"S0218127417501486BIB025","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2016.2538727"},{"key":"S0218127417501486BIB026","first-page":"429","volume":"3","author":"Yang J. J.","year":"2008","journal-title":"Nature"},{"key":"S0218127417501486BIB027","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2015.2504841"},{"key":"S0218127417501486BIB028","doi-asserted-by":"publisher","DOI":"10.1063\/1.4922344"},{"key":"S0218127417501486BIB029","doi-asserted-by":"publisher","DOI":"10.1039\/C7NR00934H"}],"container-title":["International Journal of Bifurcation and Chaos"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S0218127417501486","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,10,17]],"date-time":"2020-10-17T10:05:37Z","timestamp":1602929137000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/abs\/10.1142\/S0218127417501486"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,8]]},"references-count":29,"journal-issue":{"issue":"09","published-online":{"date-parts":[[2017,9,10]]},"published-print":{"date-parts":[[2017,8]]}},"alternative-id":["10.1142\/S0218127417501486"],"URL":"https:\/\/doi.org\/10.1142\/s0218127417501486","relation":{},"ISSN":["0218-1274","1793-6551"],"issn-type":[{"value":"0218-1274","type":"print"},{"value":"1793-6551","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017,8]]}}}