{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,7]],"date-time":"2026-04-07T23:01:32Z","timestamp":1775602892995,"version":"3.50.1"},"reference-count":46,"publisher":"World Scientific Pub Co Pte Ltd","issue":"07","funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["U1909201"],"award-info":[{"award-number":["U1909201"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Fundamental Research Funds for the Provincial Universities of Zhejiang","award":["GK199900299012-010"],"award-info":[{"award-number":["GK199900299012-010"]}]},{"name":"Brunel Research Initiative and Enterprise Fund"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Int. J. Bifurcation Chaos"],"published-print":{"date-parts":[[2021,6,15]]},"abstract":"<jats:p> Memristive technologies are attractive due to their nonvolatility, high density, low power, nanoscale geometry, nonlinearity, binary\/multiple memory capacity, and negative differential resistance. For memristive devices, a model corresponding with practical behavioral characteristics is highly favorable for the realization of its neuromorphic system and applications. In this paper, we propose a novel memristor model based on the Ag\/TiO<jats:sub>x<\/jats:sub> nanobelt\/Ti configuration, which can reflect three different states (i.e. original stage, transition stage, and resistive switching state) of the physical memristor with a satisfactory fitting precision (greater than 99.88%). Meanwhile, this work gives (1) an insight onto the electrical characteristics of the memristor model under different humidity conditions; (2) the influence of the water molecular concentration on the memristor behavior, which is of importance for the memristor fabrication and subsequent applications. For verification purposes, the proposed three-state switchable memristor is applied into the memristor-based logic implementation. The experimental results demonstrate that the constructed circuit is able to realize basic Boolean logic operations with fast response speed and high efficiency. <\/jats:p>","DOI":"10.1142\/s0218127421300202","type":"journal-article","created":{"date-parts":[[2021,6,18]],"date-time":"2021-06-18T04:18:28Z","timestamp":1623989908000},"page":"2130020","source":"Crossref","is-referenced-by-count":23,"title":["TSSM: Three-State Switchable Memristor Model Based on Ag\/TiOx Nanobelt\/Ti Configuration"],"prefix":"10.1142","volume":"31","author":[{"given":"Xiaoyue","family":"Ji","sequence":"first","affiliation":[{"name":"College of Electrical Engineering, Zhejiang University, Hangzhou 310027, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6535-2221","authenticated-orcid":false,"given":"Donglian","family":"Qi","sequence":"additional","affiliation":[{"name":"College of Electrical Engineering, Zhejiang University, Hangzhou 310027, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhekang","family":"Dong","sequence":"additional","affiliation":[{"name":"School of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, P. R. China"},{"name":"Zhejiang Provincial Key Lab of Equipment Electronics, Hangzhou 310018, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chun Sing","family":"Lai","sequence":"additional","affiliation":[{"name":"Department of Electronic and Computer Engineering, Brunel University London, London UB8 3PH, UK"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Guangdong","family":"Zhou","sequence":"additional","affiliation":[{"name":"School of Artificial Intelligence, Southwest University, Chongqing 400715, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaofang","family":"Hu","sequence":"additional","affiliation":[{"name":"School of Artificial Intelligence, Southwest University, Chongqing 400715, P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"219","published-online":{"date-parts":[[2021,6,18]]},"reference":[{"key":"S0218127421300202BIB001","doi-asserted-by":"publisher","DOI":"10.1039\/C9CP00972H"},{"key":"S0218127421300202BIB002","first-page":"210","volume":"18","author":"Biolek Z.","year":"2009","journal-title":"Radioengineering"},{"key":"S0218127421300202BIB003","doi-asserted-by":"publisher","DOI":"10.1109\/TCT.1971.1083337"},{"key":"S0218127421300202BIB004","doi-asserted-by":"publisher","DOI":"10.1016\/j.neucom.2018.04.066"},{"key":"S0218127421300202BIB005","doi-asserted-by":"publisher","DOI":"10.1142\/S0218127418501493"},{"key":"S0218127421300202BIB006","doi-asserted-by":"publisher","DOI":"10.1109\/TNNLS.2014.2334701"},{"key":"S0218127421300202BIB007","doi-asserted-by":"publisher","DOI":"10.1063\/1.5127039"},{"key":"S0218127421300202BIB008","volume-title":"Matrix Comptations","author":"Golub G. H.","year":"1989","edition":"2"},{"key":"S0218127421300202BIB009","doi-asserted-by":"publisher","DOI":"10.1039\/C8NR09662G"},{"key":"S0218127421300202BIB010","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2899889"},{"key":"S0218127421300202BIB011","doi-asserted-by":"publisher","DOI":"10.1109\/ICASSP.1997.604858"},{"key":"S0218127421300202BIB012","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2010.2078710"},{"key":"S0218127421300202BIB013","doi-asserted-by":"publisher","DOI":"10.1021\/nl904092h"},{"key":"S0218127421300202BIB014","doi-asserted-by":"publisher","DOI":"10.1063\/1.5108899"},{"key":"S0218127421300202BIB015","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2012.2215714"},{"key":"S0218127421300202BIB016","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2015.2433536"},{"key":"S0218127421300202BIB017","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.112.206101"},{"key":"S0218127421300202BIB018","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2917935"},{"key":"S0218127421300202BIB019","first-page":"1","volume-title":"Handbook of Advanced Electronic and Photonic Devices and Materials","author":"Lie D. Y. C.","year":"2000"},{"key":"S0218127421300202BIB020","first-page":"151","volume-title":"Semiconductors and Semimetals","volume":"73","author":"Lie D. Y. C.","year":"2001"},{"key":"S0218127421300202BIB021","first-page":"4873","volume":"18","author":"Mandt S.","year":"2017","journal-title":"J. Mach. Learn. Res."},{"key":"S0218127421300202BIB022","doi-asserted-by":"publisher","DOI":"10.1016\/j.jssc.2019.120975"},{"key":"S0218127421300202BIB023","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201501517"},{"key":"S0218127421300202BIB024","doi-asserted-by":"publisher","DOI":"10.1016\/j.commatsci.2019.04.046"},{"key":"S0218127421300202BIB025","doi-asserted-by":"publisher","DOI":"10.1186\/s11671-017-2419-8"},{"key":"S0218127421300202BIB026","doi-asserted-by":"publisher","DOI":"10.1109\/4.808914"},{"key":"S0218127421300202BIB027","doi-asserted-by":"publisher","DOI":"10.1016\/j.chemphys.2018.09.008"},{"key":"S0218127421300202BIB028","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.8b20423"},{"key":"S0218127421300202BIB029","doi-asserted-by":"publisher","DOI":"10.3390\/nano9060897"},{"key":"S0218127421300202BIB030","doi-asserted-by":"publisher","DOI":"10.1038\/nature06932"},{"key":"S0218127421300202BIB031","doi-asserted-by":"publisher","DOI":"10.1021\/acsaelm.0c00094"},{"key":"S0218127421300202BIB032","doi-asserted-by":"publisher","DOI":"10.1021\/nn4026614"},{"key":"S0218127421300202BIB033","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201501389"},{"key":"S0218127421300202BIB034","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2017.2648844"},{"key":"S0218127421300202BIB035","doi-asserted-by":"publisher","DOI":"10.1038\/nmat4756"},{"key":"S0218127421300202BIB036","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2013.2252057"},{"key":"S0218127421300202BIB037","doi-asserted-by":"publisher","DOI":"10.1063\/1.3693392"},{"key":"S0218127421300202BIB038","doi-asserted-by":"publisher","DOI":"10.1038\/s41586-020-1942-4"},{"key":"S0218127421300202BIB039","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6528\/ab3260"},{"key":"S0218127421300202BIB040","doi-asserted-by":"publisher","DOI":"10.1002\/inf2.12032"},{"key":"S0218127421300202BIB041","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.201700567"},{"key":"S0218127421300202BIB042","doi-asserted-by":"publisher","DOI":"10.1039\/C9MH00468H"},{"key":"S0218127421300202BIB043","doi-asserted-by":"publisher","DOI":"10.1063\/1.5089147"},{"key":"S0218127421300202BIB044","doi-asserted-by":"publisher","DOI":"10.1039\/C8TC04903C"},{"key":"S0218127421300202BIB045","doi-asserted-by":"publisher","DOI":"10.1016\/j.nanoen.2019.104386"},{"key":"S0218127421300202BIB046","doi-asserted-by":"publisher","DOI":"10.1109\/81.802822"}],"container-title":["International Journal of Bifurcation and Chaos"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S0218127421300202","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,6,18]],"date-time":"2021-06-18T04:20:56Z","timestamp":1623990056000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/abs\/10.1142\/S0218127421300202"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,6,15]]},"references-count":46,"journal-issue":{"issue":"07","published-print":{"date-parts":[[2021,6,15]]}},"alternative-id":["10.1142\/S0218127421300202"],"URL":"https:\/\/doi.org\/10.1142\/s0218127421300202","relation":{},"ISSN":["0218-1274","1793-6551"],"issn-type":[{"value":"0218-1274","type":"print"},{"value":"1793-6551","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,6,15]]}}}