{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,31]],"date-time":"2025-10-31T16:52:12Z","timestamp":1761929532997},"reference-count":20,"publisher":"World Scientific Pub Co Pte Lt","issue":"27","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Int. J. Mod. Phys. B"],"published-print":{"date-parts":[[2010,10,30]]},"abstract":"<jats:p> Laser ablation has attracted special interest for the formation of thin films compared with other formation technique. A distinctive feature of laser ablation is that it allows high quality and stoichiometry of films of even very complex element material. In this presentation, laser ablation of AgInSe <jats:sub>2<\/jats:sub> chalcopyrite semiconductor will be discussed in which it is difficult to maintain stoichiometry by conventional method. High Quality AgInSe <jats:sub>2<\/jats:sub> (AIS) films were grown on Glass substrates by the ultra-high-vacuum pulsed laser deposition technique from the AIS target synthesized from high-purity materials. The X-ray diffraction studies of the films show that films are textured in (112) direction. The substrate temperature appears to influence the properties of films. Increase in substrate temperature results in a more ordered structure. Compositional analysis has been carried out by EDAX. It is observed that compositional stoichiometry is maintained to a greater extent by PLD technique than other traditional methods like thermal evaporation. The optical studies of the films show that the optical band gap is about 1.20 eV. <\/jats:p>","DOI":"10.1142\/s0217979210056256","type":"journal-article","created":{"date-parts":[[2011,2,8]],"date-time":"2011-02-08T06:33:59Z","timestamp":1297146839000},"page":"5379-5385","source":"Crossref","is-referenced-by-count":11,"title":["CRYSTALLINE <font>AgInSe<\/font><sub>2<\/sub> FILMS ON GLASS BY LASER ABLATION"],"prefix":"10.1142","volume":"24","author":[{"given":"DINESH","family":"PATHAK","sequence":"first","affiliation":[{"name":"Department of Physics, Guru Nanak Dev University, Amritsar., India"}]},{"given":"R. K.","family":"BEDI","sequence":"additional","affiliation":[{"name":"Department of Physics, Guru Nanak Dev University, Amritsar., India"}]},{"given":"AJAY","family":"KAUSHAL","sequence":"additional","affiliation":[{"name":"Department of Physics and Center of Nanotechnology, Indian Institute of Technology Roorkee, India"}]},{"given":"DAVINDER","family":"KAUR","sequence":"additional","affiliation":[{"name":"Department of Physics and Center of Nanotechnology, Indian Institute of Technology Roorkee, India"}]}],"member":"219","published-online":{"date-parts":[[2012,1,25]]},"reference":[{"key":"rf1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1661532"},{"key":"rf2","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/11\/11\/005"},{"key":"rf3","doi-asserted-by":"publisher","DOI":"10.1002\/pip.626"},{"key":"rf4","doi-asserted-by":"publisher","DOI":"10.1002\/pssc.200669511"},{"key":"rf5","doi-asserted-by":"publisher","DOI":"10.1016\/0042-207X(95)00233-2"},{"key":"rf6","doi-asserted-by":"publisher","DOI":"10.1016\/0040-6090(84)90348-1"},{"key":"rf7","doi-asserted-by":"publisher","DOI":"10.1139\/p87-169"},{"key":"rf8","doi-asserted-by":"publisher","DOI":"10.1016\/S0040-6090(98)00982-1"},{"key":"rf9","author":"Pathak D.","journal-title":"Appl. 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