{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,3,25]],"date-time":"2024-03-25T08:41:17Z","timestamp":1711356077715},"reference-count":0,"publisher":"World Scientific Pub Co Pte Ltd","issue":"08","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Math. Models Methods Appl. Sci."],"published-print":{"date-parts":[[2001,11]]},"abstract":"<jats:p> The aim of this paper is to present a new scaling which is appropriate for modeling reverse biased semiconductor devices with moderately high applied potential and its asymptotic analysis. This scaling was motivated by the modeling of oxygen sensors. It is compared to the ones leading to (a) electroneutrality, (b) the existence of a depletion zone. With our scaling such a zone may appear within a boundary layer. A particular attention is paid to the qualitative dependence of the asymptotic solution to the boundary value of the concentration of carrier. <\/jats:p>","DOI":"10.1142\/s0218202501001409","type":"journal-article","created":{"date-parts":[[2002,7,27]],"date-time":"2002-07-27T10:58:59Z","timestamp":1027767539000},"page":"1431-1456","source":"Crossref","is-referenced-by-count":0,"title":["ON A NEW SCALING FOR SEMICONDUCTOR DEVICE EQUATIONS AND ITS ASYMPTOTIC ANALYSIS"],"prefix":"10.1142","volume":"11","author":[{"given":"J.","family":"HENRY","sequence":"first","affiliation":[{"name":"INRIA B.P. 105, 78153 Le Chesnay Cedex, France"}]},{"given":"B.","family":"LOURO","sequence":"additional","affiliation":[{"name":"CMAF, Av. Prof. Gama Pinto, 2, 1649-003 Lisboa, Portugal"}]},{"given":"A.","family":"VIEL","sequence":"additional","affiliation":[{"name":"UTC, Department of GI, BP 649, 60206 Compiegne Cedex, France"}]},{"given":"J. P.","family":"YVON","sequence":"additional","affiliation":[{"name":"INSA-Rennes, CS 14315, 35043 Rennes Cedex, France"}]}],"member":"219","published-online":{"date-parts":[[2011,10,24]]},"container-title":["Mathematical Models and Methods in Applied Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/www.worldscientific.com\/doi\/pdf\/10.1142\/S0218202501001409","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,3,25]],"date-time":"2024-03-25T08:11:33Z","timestamp":1711354293000},"score":1,"resource":{"primary":{"URL":"https:\/\/www.worldscientific.com\/doi\/10.1142\/S0218202501001409"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,11]]},"references-count":0,"journal-issue":{"issue":"08","published-print":{"date-parts":[[2001,11]]}},"alternative-id":["10.1142\/S0218202501001409"],"URL":"https:\/\/doi.org\/10.1142\/s0218202501001409","relation":{},"ISSN":["0218-2025","1793-6314"],"issn-type":[{"value":"0218-2025","type":"print"},{"value":"1793-6314","type":"electronic"}],"subject":[],"published":{"date-parts":[[2001,11]]}}}