{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,19]],"date-time":"2025-06-19T04:55:00Z","timestamp":1750308900495,"version":"3.41.0"},"publisher-location":"New York, NY, USA","reference-count":20,"publisher":"ACM","license":[{"start":{"date-parts":[[2005,4,17]],"date-time":"2005-04-17T00:00:00Z","timestamp":1113696000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2005,4,17]]},"DOI":"10.1145\/1057661.1057713","type":"proceedings-article","created":{"date-parts":[[2005,8,3]],"date-time":"2005-08-03T08:31:47Z","timestamp":1123057907000},"page":"213-216","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":6,"title":["Low-power circuits using dynamic threshold devices"],"prefix":"10.1145","author":[{"given":"Paul","family":"Beckett","sequence":"first","affiliation":[{"name":"RMIT University"}]}],"member":"320","published-online":{"date-parts":[[2005,4,17]]},"reference":[{"key":"e_1_3_2_1_1_1","doi-asserted-by":"publisher","DOI":"10.1145\/996566.996801"},{"key":"e_1_3_2_1_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/5.371964"},{"key":"e_1_3_2_1_3_1","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/19\/3\/009"},{"key":"e_1_3_2_1_4_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1506941"},{"key":"e_1_3_2_1_5_1","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.42.351"},{"key":"e_1_3_2_1_6_1","doi-asserted-by":"publisher","DOI":"10.1109\/16.641365"},{"key":"e_1_3_2_1_7_1","doi-asserted-by":"publisher","DOI":"10.1109\/16.568045"},{"key":"e_1_3_2_1_8_1","doi-asserted-by":"publisher","DOI":"10.1049\/el:20040028"},{"key":"e_1_3_2_1_9_1","doi-asserted-by":"publisher","DOI":"10.1109\/PROC.1968.6618"},{"key":"e_1_3_2_1_10_1","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.42.2009"},{"key":"e_1_3_2_1_11_1","first-page":"45","volume-title":"60th Device Research Conference, DRC2002","author":"Lin H.-C.","year":"2002","unstructured":"H.-C. Lin , M.-F. Wang , F.-J. Hou , J.-T. Liu , F.-H. Ko , H.-L. Chen , G.-W. Huang , T.-Y. Huang and S. M. Sze , \" Nano-Scale Implantless Schottky-Barrier SOI FinFETs with Excellent Ambipolar Performance,\" Proc . 60th Device Research Conference, DRC2002 , pp 45 -- 46 , 2002 . H.-C. Lin, M.-F. Wang, F.-J. Hou, J.-T. Liu, F.-H. Ko, H.-L. Chen, G.-W. Huang, T.-Y. Huang and S. M. Sze, \"Nano-Scale Implantless Schottky-Barrier SOI FinFETs with Excellent Ambipolar Performance,\" Proc. 60th Device Research Conference, DRC2002, pp 45--46, 2002."},{"key":"e_1_3_2_1_12_1","doi-asserted-by":"publisher","DOI":"10.1109\/WOFE.1997.621159"},{"key":"e_1_3_2_1_13_1","first-page":"733","volume-title":"International Electron Devices Meeting, IEDM '98","author":"Ieong M.","year":"1998","unstructured":"M. Ieong , P. M. Solomon , S. E. Laux , H.-S. P. Wong and D. Chidambarrao , \" Comparison of Raised and Schottky Source\/Drain MOSFETs Using a Novel Tunneling Contact Model,\" Proc . International Electron Devices Meeting, IEDM '98 , San Francisco, CA, USA , pp 733 -- 736 , 1998 . M. Ieong, P. M. Solomon, S. E. Laux, H.-S. P. Wong and D. Chidambarrao, \"Comparison of Raised and Schottky Source\/Drain MOSFETs Using a Novel Tunneling Contact Model,\" Proc. International Electron Devices Meeting, IEDM '98, San Francisco, CA, USA, pp 733--736, 1998."},{"key":"e_1_3_2_1_14_1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1998.746385"},{"key":"e_1_3_2_1_15_1","doi-asserted-by":"publisher","DOI":"10.1109\/16.57165"},{"key":"e_1_3_2_1_16_1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2002.1175824"},{"key":"e_1_3_2_1_17_1","first-page":"115","volume-title":"IEEE International SOI Conference","author":"Chen Q.","year":"2002","unstructured":"Q. Chen , L. Wang and J. D. Meindl , \" Impact of High-K Dielectrics on Undoped Double-Gate MOSFET Scaling,\" Proc . IEEE International SOI Conference , pp 115 -- 116 , 2002 . Q. Chen, L. Wang and J. D. Meindl, \"Impact of High-K Dielectrics on Undoped Double-Gate MOSFET Scaling,\" Proc. IEEE International SOI Conference, pp 115--116, 2002."},{"key":"e_1_3_2_1_18_1","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.42.2073"},{"key":"e_1_3_2_1_19_1","first-page":"57","volume-title":"International Electron Devices Meeting, IEDM2000","author":"Kedzierski J.","year":"2000","unstructured":"J. Kedzierski , P. Xuan , E. H. Anderson , J. Bokor , T.-J. King and C. Hu , \" Complementary Silicide Source\/Drain Thin-Body MOSFETs for the 20 nm Gate Length Regime,\" Proc . International Electron Devices Meeting, IEDM2000 , San Francisco, CA, USA , pp 57 -- 60 , 2000 . J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, T.-J. King and C. Hu, \"Complementary Silicide Source\/Drain Thin-Body MOSFETs for the 20 nm Gate Length Regime,\" Proc. International Electron Devices Meeting, IEDM2000, San Francisco, CA, USA, pp 57--60, 2000."},{"key":"e_1_3_2_1_20_1","doi-asserted-by":"publisher","DOI":"10.1145\/1024393.1024396"}],"event":{"name":"GLSVLSI05: Great Lakes Symposium on VLSI 2005","sponsor":["ACM Association for Computing Machinery","SIGDA ACM Special Interest Group on Design Automation"],"location":"Chicago Illinois USA","acronym":"GLSVLSI05"},"container-title":["Proceedings of the 15th ACM Great Lakes symposium on VLSI"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/1057661.1057713","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/1057661.1057713","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T21:26:00Z","timestamp":1750281960000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/1057661.1057713"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2005,4,17]]},"references-count":20,"alternative-id":["10.1145\/1057661.1057713","10.1145\/1057661"],"URL":"https:\/\/doi.org\/10.1145\/1057661.1057713","relation":{},"subject":[],"published":{"date-parts":[[2005,4,17]]},"assertion":[{"value":"2005-04-17","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}