{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,8]],"date-time":"2024-09-08T04:35:56Z","timestamp":1725770156673},"publisher-location":"New York, NY, USA","reference-count":17,"publisher":"ACM","content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2008,6,8]]},"DOI":"10.1145\/1391469.1391522","type":"proceedings-article","created":{"date-parts":[[2008,7,30]],"date-time":"2008-07-30T12:09:58Z","timestamp":1217419798000},"page":"205-210","update-policy":"http:\/\/dx.doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":26,"title":["A methodology for statistical estimation of read access yield in SRAMs"],"prefix":"10.1145","author":[{"given":"Mohamed H.","family":"Abu-Rahma","sequence":"first","affiliation":[{"name":"Qualcomm Incorporated, San Diego, CA and University of Waterloo, Waterloo, ON"}]},{"given":"Kinshuk","family":"Chowdhury","sequence":"additional","affiliation":[{"name":"Qualcomm Incorporated, San Diego, CA"}]},{"given":"Joseph","family":"Wang","sequence":"additional","affiliation":[{"name":"Qualcomm Incorporated, San Diego, CA"}]},{"given":"Zhiqin","family":"Chen","sequence":"additional","affiliation":[{"name":"Qualcomm Incorporated, San Diego, CA"}]},{"given":"Sei Seung","family":"Yoon","sequence":"additional","affiliation":[{"name":"Qualcomm Incorporated, San Diego, CA"}]},{"given":"Mohab","family":"Anis","sequence":"additional","affiliation":[{"name":"University of Waterloo, Waterloo, ON"}]}],"member":"320","published-online":{"date-parts":[[2008,6,8]]},"reference":[{"key":"e_1_3_2_1_1_1","unstructured":"The International Technology Roadmap for Semiconductors (ITRS) website: http:\/\/public.itrs.net. {Online}. The International Technology Roadmap for Semiconductors (ITRS) website: http:\/\/public.itrs.net. {Online}."},{"key":"e_1_3_2_1_2_1","first-page":"593","volume-title":"Challenge: variability characterization and modeling for 65- to 90-mn processes,\" CICC","author":"Masuda H.","year":"2005","unstructured":"H. Masuda , S. Ohkawa , A. Kurokawa , and M. Aoki , \" Challenge: variability characterization and modeling for 65- to 90-mn processes,\" CICC , 2005 , pp. 593 -- 599 . H. Masuda, S. Ohkawa, A. Kurokawa, and M. Aoki, \"Challenge: variability characterization and modeling for 65- to 90-mn processes,\" CICC, 2005, pp. 593--599."},{"key":"e_1_3_2_1_3_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.815862"},{"key":"e_1_3_2_1_4_1","doi-asserted-by":"publisher","DOI":"10.1109\/ICCAD.2004.1382599"},{"key":"e_1_3_2_1_5_1","doi-asserted-by":"publisher","DOI":"10.1109\/92.645062"},{"volume-title":"Statistical Analysis and Optimization for VLSI: Timing and Power","year":"2005","author":"Srivastava A.","key":"e_1_3_2_1_6_1","unstructured":"A. Srivastava , D. Sylvester , and D. Blaauw , Statistical Analysis and Optimization for VLSI: Timing and Power . Springer , 2005 . A. Srivastava, D. Sylvester, and D. Blaauw, Statistical Analysis and Optimization for VLSI: Timing and Power. Springer, 2005."},{"key":"e_1_3_2_1_7_1","doi-asserted-by":"publisher","DOI":"10.1145\/1146909.1146928"},{"key":"e_1_3_2_1_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/ICCAD.2004.1382534"},{"key":"e_1_3_2_1_9_1","first-page":"175","author":"Amrutur B.","year":"2000","unstructured":"B. Amrutur and M. Horowitz , \"Speed and power scaling of SRAM's,\" IEEE Journal of Solid-State Circuits , pp. 175 -- 185 , Feb 2000 . B. Amrutur and M. Horowitz, \"Speed and power scaling of SRAM's,\" IEEE Journal of Solid-State Circuits, pp. 175--185, Feb 2000.","journal-title":"\"Speed and power scaling of SRAM's,\" IEEE Journal of Solid-State Circuits"},{"key":"e_1_3_2_1_10_1","first-page":"915","volume-title":"Transistor matching in analog CMOS applications,\" IEDM","author":"Pelgrom M.","year":"1999","unstructured":"M. Pelgrom , H. Tuinhout , and M. Vertregt , \" Transistor matching in analog CMOS applications,\" IEDM 1999 , pp. 915 -- 918 . M. Pelgrom, H. Tuinhout, and M. Vertregt, \"Transistor matching in analog CMOS applications,\" IEDM 1999, pp. 915--918."},{"volume-title":"Fundamentals of modern VLSI devices","year":"1998","author":"Taur Y.","key":"e_1_3_2_1_11_1","unstructured":"Y. Taur and T. H. Ning , Fundamentals of modern VLSI devices . Cambridge University Press , 1998 . Y. Taur and T. H. Ning, Fundamentals of modern VLSI devices. Cambridge University Press, 1998."},{"key":"e_1_3_2_1_12_1","doi-asserted-by":"crossref","unstructured":"P. Kinget \"Device mismatch and tradeoffs in the design of analog circuits \" IEEE Journal of Solid-State Circuits pp. 1212--1224 2005. P. Kinget \"Device mismatch and tradeoffs in the design of analog circuits \" IEEE Journal of Solid-State Circuits pp. 1212--1224 2005.","DOI":"10.1109\/JSSC.2005.848021"},{"key":"e_1_3_2_1_13_1","first-page":"1148","volume-title":"Yield and speed optimization of a latch-type voltage sense amplifier,\" IEEE Journal of Solid-State Circuits","author":"Wicht B.","year":"2004","unstructured":"B. Wicht , T. Nirschl , and D. Schmitt-Landsiedel , \" Yield and speed optimization of a latch-type voltage sense amplifier,\" IEEE Journal of Solid-State Circuits , pp. 1148 -- 1158 , July 2004 . B. Wicht, T. Nirschl, and D. Schmitt-Landsiedel, \"Yield and speed optimization of a latch-type voltage sense amplifier,\" IEEE Journal of Solid-State Circuits, pp. 1148--1158, July 2004."},{"key":"e_1_3_2_1_14_1","first-page":"183","volume-title":"Impact of die-to-die and within-die parameter fluctuations on themaximum clock frequency distribution for gigascale integration,\" IEEE Journal of Solid-State Circuits","author":"Bowman K.","year":"2002","unstructured":"K. Bowman , S. Duvall , and J. Meindl , \" Impact of die-to-die and within-die parameter fluctuations on themaximum clock frequency distribution for gigascale integration,\" IEEE Journal of Solid-State Circuits , pp. 183 -- 190 , 2002 . K. Bowman, S. Duvall, and J. Meindl, \"Impact of die-to-die and within-die parameter fluctuations on themaximum clock frequency distribution for gigascale integration,\" IEEE Journal of Solid-State Circuits, pp. 183--190, 2002."},{"key":"e_1_3_2_1_15_1","first-page":"1787","author":"Mahmoodi H.","year":"2005","unstructured":"H. Mahmoodi , S. Mukhopadhyay , and K. Roy , \"Estimation of delay variations due to random-dopant fluctuations in nanoscale CMOS circuits,\" IEEE Journal of Solid-State Circuits , pp. 1787 -- 1796 , 2005 . H. Mahmoodi, S. Mukhopadhyay, and K. Roy, \"Estimation of delay variations due to random-dopant fluctuations in nanoscale CMOS circuits,\" IEEE Journal of Solid-State Circuits, pp. 1787--1796, 2005.","journal-title":"\"Estimation of delay variations due to random-dopant fluctuations in nanoscale CMOS circuits,\" IEEE Journal of Solid-State Circuits"},{"key":"e_1_3_2_1_16_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.891869"},{"key":"e_1_3_2_1_17_1","first-page":"397","volume-title":"Impact of STI-induced stress, inverse narrow width effect, and statistical V TH variations on leakage currents in 120 nm CMOS,\" ESSDERC","author":"Pacha C.","year":"2004","unstructured":"C. Pacha , B. Martin , K. von Arnim , R. Brederlow , D. Schmitt-Landsiedel , P. Seegebrecht , J. Berthold , and R. Thewes , \" Impact of STI-induced stress, inverse narrow width effect, and statistical V TH variations on leakage currents in 120 nm CMOS,\" ESSDERC , 2004 , pp. 397 -- 400 . C. Pacha, B. Martin, K. von Arnim, R. Brederlow, D. Schmitt-Landsiedel, P. Seegebrecht, J. Berthold, and R. Thewes, \"Impact of STI-induced stress, inverse narrow width effect, and statistical V TH variations on leakage currents in 120 nm CMOS,\" ESSDERC, 2004, pp. 397--400."}],"event":{"name":"DAC '08: The 45th Annual Design Automation Conference 2008","sponsor":["The EDA Consortium","IEEE\/CASS\/CANDE\/CEDA","SIGDA ACM Special Interest Group on Design Automation"],"location":"Anaheim California","acronym":"DAC '08"},"container-title":["Proceedings of the 45th annual Design Automation Conference"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/1391469.1391522","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,1,10]],"date-time":"2023-01-10T20:45:50Z","timestamp":1673383550000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/1391469.1391522"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2008,6,8]]},"references-count":17,"alternative-id":["10.1145\/1391469.1391522","10.1145\/1391469"],"URL":"http:\/\/dx.doi.org\/10.1145\/1391469.1391522","relation":{},"subject":[],"published":{"date-parts":[[2008,6,8]]},"assertion":[{"value":"2008-06-08","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}