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Syst."],"published-print":{"date-parts":[[2010,2]]},"abstract":"<jats:p>This article presents an analysis of the reliability of memories protected with Built-in Current Sensors (BICS) and a per-word parity bit when exposed to Single Event Upsets (SEUs). Reliability is characterized by Mean Time to Failure (MTTF) for which two analytic models are proposed. A simple model, similar to the one traditionally used for memories protected with scrubbing, is proposed for the low error rate case. A more complex Markov model is proposed for the high error rate case. The accuracy of the models is checked using a wide set of simulations. The results presented in this article allow fast estimation of MTTF enabling design of optimal memory configurations to meet specified MTTF goals at minimum cost. 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