{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,19]],"date-time":"2025-06-19T04:32:51Z","timestamp":1750307571662,"version":"3.41.0"},"publisher-location":"New York, NY, USA","reference-count":13,"publisher":"ACM","license":[{"start":{"date-parts":[[2010,2,26]],"date-time":"2010-02-26T00:00:00Z","timestamp":1267142400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2010,2,26]]},"DOI":"10.1145\/1741906.1742104","type":"proceedings-article","created":{"date-parts":[[2010,3,30]],"date-time":"2010-03-30T12:32:28Z","timestamp":1269952348000},"page":"859-862","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":2,"title":["Optically gated MOSFET modeling"],"prefix":"10.1145","author":[{"given":"B. K.","family":"Mishra","sequence":"first","affiliation":[{"name":"Mumbai University, Mumbai, India"}]},{"given":"G.","family":"Phade","sequence":"additional","affiliation":[{"name":"SNDT University, Santacruz (West), Mumbai"}]},{"given":"J.","family":"Lochan","sequence":"additional","affiliation":[{"name":"SNDT University, Santacruz (West), Mumbai"}]},{"given":"S. C.","family":"Patil","sequence":"additional","affiliation":[{"name":"SVKM's NMIMS, Vile Parle (West), Mumbai"}]}],"member":"320","published-online":{"date-parts":[[2010,2,26]]},"reference":[{"key":"e_1_3_2_1_1_1","volume-title":"Light Dependence of SOI MOSFET with Nonuniform Doping Profile","author":"Abraham George K.","year":"2000","unstructured":"George K. Abraham , B. B. Pal , and R. U. Khan ,' Light Dependence of SOI MOSFET with Nonuniform Doping Profile ', IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 47, NO. 7, JULY 2000 1469 George K. Abraham, B. B. Pal, and R. U. Khan,' Light Dependence of SOI MOSFET with Nonuniform Doping Profile', IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 47, NO. 7, JULY 2000 1469"},{"key":"e_1_3_2_1_2_1","volume-title":"Mesra","author":"Computer","year":"1995","unstructured":"Computer Aided modeling of solid state photodetectors, Ph.D thesis by B. K. Mishra, Birla institute of technology , Mesra , Ranchi , 1995 Computer Aided modeling of solid state photodetectors, Ph.D thesis by B. K. Mishra, Birla institute of technology, Mesra, Ranchi, 1995"},{"key":"e_1_3_2_1_3_1","first-page":"277","article-title":"controlled characteristics of an InGaAs MISFET, P. Chakrabarti, B. K. Mishra, Y. Pratap Reddy and S. Prakash, Phys. stat","volume":"147","author":"Optically","year":"1995","unstructured":"Optically controlled characteristics of an InGaAs MISFET, P. Chakrabarti, B. K. Mishra, Y. Pratap Reddy and S. Prakash, Phys. stat . Sol. (a) , Vol.- 147 , pp. 277 -- 289 , 1995 Optically controlled characteristics of an InGaAs MISFET, P. Chakrabarti, B. K. Mishra, Y. Pratap Reddy and S. Prakash, Phys. stat. Sol. (a), Vol.-147, pp. 277--289, 1995","journal-title":"Sol. (a)"},{"key":"e_1_3_2_1_4_1","volume-title":"Physics of semiconductor devices","author":"Sze S. M.","year":"1982","unstructured":"S. M. Sze , ' Physics of semiconductor devices ', 2 nd edition., New Delhi , 1982 . S. M. Sze, 'Physics of semiconductor devices', 2nd edition., New Delhi, 1982.","edition":"2"},{"key":"e_1_3_2_1_5_1","first-page":"361","volume-title":"Vol-39","author":"Microwave","year":"1993","unstructured":"Microwave characterization on an optically controlled high electron mobility transistor, B. K. Mishra, V. Pradeep and P. Chakrabarti, J. IETE , Vol-39 , pp. 361 -- 373 , 1993 Microwave characterization on an optically controlled high electron mobility transistor, B. K. Mishra, V. Pradeep and P. Chakrabarti, J. IETE, Vol-39, pp. 361--373, 1993"},{"key":"e_1_3_2_1_6_1","first-page":"296","volume-title":"Microwave and optical technology letters, vol.-8","author":"Microwave","unstructured":"Microwave model of an optically controlled GaAs MESFET, P. Chakrabarti , B. K. Mishra , K. Satish Kumar and S. K. Shrestha , Microwave and optical technology letters, vol.-8 , pp. 296 -- 300 , 195 Microwave model of an optically controlled GaAs MESFET, P. Chakrabarti, B. K. Mishra, K. Satish Kumar and S. K. Shrestha, Microwave and optical technology letters, vol.-8, pp. 296--300, 195"},{"key":"e_1_3_2_1_7_1","doi-asserted-by":"crossref","unstructured":"Journal on Electron Devices 1992 39 OPFET characteristics considering the effect of gate depletion with modulation due to incident radiation B. B. Pal and S. N. Chattopadhyay","DOI":"10.1109\/16.129077"},{"key":"e_1_3_2_1_8_1","volume":"45","author":"Implanted GaAs Mesfet Optically","year":"1998","unstructured":"Optically controlled Ion- Implanted GaAs Mesfet Charactristic with Opaque Gate , Shubha, B. B. Pal and R. U. Khan , Journal on Electron Devices , Vol. 45 , January 1998 Optically controlled Ion-Implanted GaAs Mesfet Charactristic with Opaque Gate, Shubha, B. B. Pal and R. U. Khan, Journal on Electron Devices, Vol. 45, January 1998","journal-title":"Journal on Electron Devices"},{"key":"e_1_3_2_1_9_1","volume-title":"MARCH","author":"Moon Byung-Jong","year":"1991","unstructured":"Byung-Jong Moon , Chan-Kwang Park , Kwyro Lee , and Michael Shur , ' New Short-Channel n-MOSFET Current-Voltage Model in Strong Inversion and Unified Parameter Extraction Method' , IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 38, NO. 3 , MARCH 1991 , pp-592 Byung-Jong Moon, Chan-Kwang Park, Kwyro Lee, and Michael Shur, 'New Short-Channel n-MOSFET Current-Voltage Model in Strong Inversion and Unified Parameter Extraction Method', IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 38, NO. 3, MARCH 1991, pp-592"},{"key":"e_1_3_2_1_10_1","volume-title":"VOL. 40","author":"Fjeldly Tor A.","year":"1993","unstructured":"Tor A. Fjeldly , Michael Shur ,' Threshold Voltage odeling and the Subthreshold Regime of Operation of Short-Channel MOSFE T's' , IEEE TRANSACTIONS ON ELECTRON DEVICES , VOL. 40 , NO. I , JANUARY 1993 , pp-137 Tor A. Fjeldly, Michael Shur,' Threshold Voltage odeling and the Subthreshold Regime of Operation of Short-Channel MOSFET's', IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 40, NO. I, JANUARY 1993, pp-137"},{"volume-title":"Microelectronics Research Center","author":"Campbell Joe C.","key":"e_1_3_2_1_11_1","unstructured":"Joe C. Campbell , Zhihong Huang , Ning Kong , and Jungwoo Oh ,' Si and Si-Compatible Photodetectors' , Microelectronics Research Center , The University of Texas , Austin, TX 78712 Joe C. Campbell, Zhihong Huang, Ning Kong, and Jungwoo Oh,' Si and Si-Compatible Photodetectors', Microelectronics Research Center, The University of Texas, Austin, TX 78712"},{"volume-title":"NAN0 Scale Quantum Devices Research Center","author":"Choi Hong Goo","key":"e_1_3_2_1_12_1","unstructured":"Hong Goo Choi , Yeon-Shik Choi , Young Chang . Io , and Hoon Kim' A Low Power SO1 MOSFET Photodetector with a Nanometer Scale Wire for Highly Integrated Circuit' , NAN0 Scale Quantum Devices Research Center , Korea Electronics Technology Institute Hong Goo Choi, Yeon-Shik Choi, Young Chang .Io, and Hoon Kim' A Low Power SO1 MOSFET Photodetector with a Nanometer Scale Wire for Highly Integrated Circuit', NAN0 Scale Quantum Devices Research Center, Korea Electronics Technology Institute"},{"key":"e_1_3_2_1_13_1","unstructured":"Nandita DasGupta 'Semiconductor Devices Modelling and Technology' PHI ISBN-81-203-2398-X  Nandita DasGupta 'Semiconductor Devices Modelling and Technology' PHI ISBN-81-203-2398-X"}],"event":{"name":"ICWET '10: International Conference and Workshop on Emerging Trends in Technology","sponsor":["UNITECH Unitech Engineers, India","AICTE All India Council for Technical Education","SIGAI ACM Special Interest Group on Artificial Intelligence","SIGARCH ACM Special Interest Group on Computer Architecture"],"location":"Mumbai Maharashtra India","acronym":"ICWET '10"},"container-title":["Proceedings of the International Conference and Workshop on Emerging Trends in Technology"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/1741906.1742104","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/1741906.1742104","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T12:41:02Z","timestamp":1750250462000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/1741906.1742104"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,2,26]]},"references-count":13,"alternative-id":["10.1145\/1741906.1742104","10.1145\/1741906"],"URL":"https:\/\/doi.org\/10.1145\/1741906.1742104","relation":{},"subject":[],"published":{"date-parts":[[2010,2,26]]},"assertion":[{"value":"2010-02-26","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}