{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,17]],"date-time":"2026-05-17T20:06:49Z","timestamp":1779048409418,"version":"3.51.4"},"publisher-location":"New York, NY, USA","reference-count":12,"publisher":"ACM","license":[{"start":{"date-parts":[[2011,2,25]],"date-time":"2011-02-25T00:00:00Z","timestamp":1298592000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2011,2,25]]},"DOI":"10.1145\/1980022.1980263","type":"proceedings-article","created":{"date-parts":[[2011,5,17]],"date-time":"2011-05-17T08:59:14Z","timestamp":1305622754000},"page":"1120-1124","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":0,"title":["Y parameter modeling of MOSFET under illumination"],"prefix":"10.1145","author":[{"given":"B. K.","family":"Mishra","sequence":"first","affiliation":[{"name":"Thakur College of Engineering and Technology, Mumbai, India"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G. M.","family":"Phade","sequence":"additional","affiliation":[{"name":"SNDT University, Santacruz (West), Mumbai, India"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"320","published-online":{"date-parts":[[2011,2,25]]},"reference":[{"key":"e_1_3_2_1_1_1","unstructured":"H. Wang X. Li W. Wu G. Gildenblat 'Unified Non-Quasi-Static MOSFET Model for Large-Signal and Small-Signal Simulations"},{"key":"e_1_3_2_1_2_1","doi-asserted-by":"publisher","DOI":"10.1002\/mmce.v18:4"},{"key":"e_1_3_2_1_3_1","volume-title":"IEE Proc.-Circuits Devices Syst.","volume":"151","author":"Tong A. F.","unstructured":"A. F. Tong, K. S. Yeo, L. Jia, C. Q. Geng, J.-G. Ma and M. A. Do, 'Simple and accurate extraction methodology for RF MOSFET valid up to 20GHz', IEE Proc.-Circuits Devices Syst., Vol. 151, No. 6, December 2004"},{"key":"e_1_3_2_1_4_1","unstructured":"Y. S. Chi J. X. Lu S. Y. Zhang Z. J. Wu and F. Y. Huang ' An Analytical Parameter Extraction of the Small-Signal Model for RF MOSFETs' 0-7803-9339-2\/05\/2005 IEEE"},{"key":"e_1_3_2_1_5_1","unstructured":"Ickjin Kwon Minkyu Je Kwyro Lee and Hyungcheol Shin 'A New Small Signal Modeling of RF MOSFETs including Charge Conservation Capacitances'"},{"key":"e_1_3_2_1_6_1","volume-title":"MOS Transistor Model for RF IC Design","author":"Enz Christian","year":"2000","unstructured":"Christian Enz, 'MOS Transistor Model for RF IC Design', IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 35, NO. 2, JANUARY 2000"},{"key":"e_1_3_2_1_7_1","doi-asserted-by":"publisher","DOI":"10.1002\/0470863803"},{"key":"e_1_3_2_1_8_1","volume-title":"Mesra","author":"Computer","year":"1995","unstructured":"Computer Aided modeling of solid state photodetectors, Ph. D. thesis by B. K. Mishra, Birla institute of technology, Mesra, Ranchi, 1995"},{"key":"e_1_3_2_1_9_1","first-page":"277","article-title":"controlled characteristics of an InGaAs MISFET, P. Chakrabarti, B. K. Mishra, Y. Pratap Reddy and S. Prakash, Phys. stat","volume":"147","author":"Optically","year":"1995","unstructured":"Optically controlled characteristics of an InGaAs MISFET, P. Chakrabarti, B. K. Mishra, Y. Pratap Reddy and S. Prakash, Phys. stat. Sol. (a), Vol.-147, pp. 277--289, 1995","journal-title":"Sol. (a)"},{"key":"e_1_3_2_1_10_1","first-page":"361","volume-title":"Vol-39","author":"Microwave","year":"1993","unstructured":"Microwave characterization on an optically controlled high electron mobility transistor, B. K. Mishra, V. Pradeep and P. Chakrabarti, J. IETE, Vol-39, pp. 361--373, 1993"},{"key":"e_1_3_2_1_11_1","first-page":"296","volume-title":"Microwave and optical technology letters, vol.-8","author":"Microwave","unstructured":"Microwave model of an optically controlled GaAs MESFET, P. Chakrabarti, B. K. Mishra, K. Satish Kumar and S. K. Shrestha, Microwave and optical technology letters, vol.-8, pp. 296--300, 195"},{"key":"e_1_3_2_1_12_1","volume":"45","author":"Implanted GaAs Mesfet Optically","year":"1998","unstructured":"Optically controlled Ion-Implanted GaAs Mesfet Charactristic with Opaque Gate, Shubha, B. B. Pal and R. U. Khan, Journal on Electron Devices, Vol. 45, January 1998","journal-title":"Journal on Electron Devices"}],"event":{"name":"ICWET '11: International Conference & Workshop on Emerging Trends in Technology","location":"Mumbai Maharashtra India","acronym":"ICWET '11","sponsor":["Thakur College Of Engg. & Tech Thakur College Of Engineering & Technology","SIGAI ACM Special Interest Group on Artificial Intelligence"]},"container-title":["Proceedings of the International Conference & Workshop on Emerging Trends in Technology"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/1980022.1980263","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/1980022.1980263","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,5,17]],"date-time":"2026-05-17T19:36:37Z","timestamp":1779046597000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/1980022.1980263"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,2,25]]},"references-count":12,"alternative-id":["10.1145\/1980022.1980263","10.1145\/1980022"],"URL":"https:\/\/doi.org\/10.1145\/1980022.1980263","relation":{},"subject":[],"published":{"date-parts":[[2011,2,25]]},"assertion":[{"value":"2011-02-25","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}