{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,19]],"date-time":"2025-06-19T04:25:35Z","timestamp":1750307135374,"version":"3.41.0"},"reference-count":24,"publisher":"Association for Computing Machinery (ACM)","issue":"1","license":[{"start":{"date-parts":[[2012,2,1]],"date-time":"2012-02-01T00:00:00Z","timestamp":1328054400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":["J. Emerg. Technol. Comput. Syst."],"published-print":{"date-parts":[[2012,2]]},"abstract":"<jats:p>A rapidly growing class of battery constrained electronic applications are those with very long sleep periods, such as structural health monitoring systems, biomedical implants, and wireless border security cameras. The traditional method for sleep-mode power reduction, transistor power gating, has drawbacks, including performance loss and residual leakage. This article presents a thorough evaluation of a new nanotechnology-enabled power gating structure, CMOS-compatible NEMS switches, in the presence of aggressive supply voltage scaling. Due to the infinite off-resistance of the NEMS switches, the average power consumption of an FFT processor performing 1 FFT per hour drops by around 30 times compared to a transistor-based power gating implementation. Additionally, the low on-resistance and nanoscale size means even with current prototypes, area overhead is as much as 5 times lower, with much room for improvement. The major drawback of NEMS switches is the high activation voltage, which can be many times higher than typical CMOS supply voltages. We demonstrate that with a charge pump, these voltages can be generated on-die, and the energy and bootup delay overhead is negligible compared to the FFT processing itself. These results show that NEMS-based power-gating warrants further investigation and the fabrication of a prototype.<\/jats:p>","DOI":"10.1145\/2093145.2093147","type":"journal-article","created":{"date-parts":[[2012,2,28]],"date-time":"2012-02-28T12:58:35Z","timestamp":1330433915000},"page":"1-18","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":3,"title":["From Transistors to NEMS"],"prefix":"10.1145","volume":"8","author":[{"given":"Michael B.","family":"Henry","sequence":"first","affiliation":[{"name":"Virginia Tech"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Leyla","family":"Nazhandali","sequence":"additional","affiliation":[{"name":"Virginia Tech"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"320","published-online":{"date-parts":[[2012,2]]},"reference":[{"key":"e_1_2_1_1_1","doi-asserted-by":"publisher","DOI":"10.1007\/s10776-009-0100-6"},{"key":"e_1_2_1_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2007.907828"},{"volume-title":"Proceedings of the IEEE\/ACM International Conference On Computer-Aided Design (ICCAD). 660--666","author":"Chen G. 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Nano-switch for study of gold contact behavior . In Proceedings of the IEEE Conference on Sensors. 248--251 . Fruehling, A., Xiao, S., Qi, M., Roy, K., and Peroulis, D. 2009. Nano-switch for study of gold contact behavior. In Proceedings of the IEEE Conference on Sensors. 248--251."},{"key":"e_1_2_1_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2014205"},{"volume-title":"Proceedings of the Design, Automation Test in Europe Conference Exhibition (DATE). 130--135","author":"Henry M.","key":"e_1_2_1_9_1","unstructured":"Henry , M. and Nazhandali , L . 2010. From transistors to MEMS: Throughput-aware power gating in CMOS circuits . In Proceedings of the Design, Automation Test in Europe Conference Exhibition (DATE). 130--135 . Henry, M. and Nazhandali, L. 2010. From transistors to MEMS: Throughput-aware power gating in CMOS circuits. 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RF MEMS switches are reliable: A comprehensive technology overview. MEMS Investor J. Maciel J. 2009. RF MEMS switches are reliable: A comprehensive technology overview. MEMS Investor J ."},{"volume-title":"Proceedings of the IEEE International Electron Devices Meeting (IEDM). 1--4.","author":"Nathanael R.","key":"e_1_2_1_14_1","unstructured":"Nathanael , R. , Pott , V. , Kam , H. , Jeon , J. , and Liu , T . -J. K. 2009. 4-terminal relay technology for complementary logic . In Proceedings of the IEEE International Electron Devices Meeting (IEDM). 1--4. Nathanael, R., Pott, V., Kam, H., Jeon, J., and Liu, T.-J. K. 2009. 4-terminal relay technology for complementary logic. 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