{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,25]],"date-time":"2026-04-25T21:52:07Z","timestamp":1777153927795,"version":"3.51.4"},"publisher-location":"New York, NY, USA","reference-count":20,"publisher":"ACM","license":[{"start":{"date-parts":[[2012,5,3]],"date-time":"2012-05-03T00:00:00Z","timestamp":1336003200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2012,5,3]]},"DOI":"10.1145\/2206781.2206865","type":"proceedings-article","created":{"date-parts":[[2012,5,7]],"date-time":"2012-05-07T18:47:53Z","timestamp":1336416473000},"page":"345-350","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":16,"title":["A dual-phase compression mechanism for hybrid DRAM\/PCM main memory architectures"],"prefix":"10.1145","author":[{"given":"Seungcheol","family":"Baek","sequence":"first","affiliation":[{"name":"Georgia Institute of Technology, Atlanta, USA"}]},{"given":"Hyung Gyu","family":"Lee","sequence":"additional","affiliation":[{"name":"Georgia Institute of Technology, Atlanta, USA"}]},{"given":"Chrysostomos","family":"Nicopoulos","sequence":"additional","affiliation":[{"name":"University of Cyprus, Nicosia, Cyprus"}]},{"given":"Jongman","family":"Kim","sequence":"additional","affiliation":[{"name":"Georgia Institute of Technology, Atlanta, USA"}]}],"member":"320","published-online":{"date-parts":[[2012,5,3]]},"reference":[{"key":"e_1_3_2_1_1_1","doi-asserted-by":"publisher","DOI":"10.5555\/998680.1006719"},{"key":"e_1_3_2_1_3_1","doi-asserted-by":"publisher","DOI":"10.1109\/2.722293"},{"key":"e_1_3_2_1_4_1","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2010.5488395"},{"key":"e_1_3_2_1_5_1","doi-asserted-by":"publisher","DOI":"10.1145\/1669112.1669157"},{"key":"e_1_3_2_1_6_1","first-page":"215","volume-title":"Proceedings of the HPCA","author":"Das R.","year":"2008","unstructured":"R. Das and et al. Performance and power optimization through data compression in network-on-chip architectures . Proceedings of the HPCA 2008 , pages 215 -- 225 . R. Das and et al. Performance and power optimization through data compression in network-on-chip architectures. Proceedings of the HPCA 2008, pages 215 -- 225."},{"key":"e_1_3_2_1_7_1","doi-asserted-by":"publisher","DOI":"10.1145\/1629911.1630086"},{"key":"e_1_3_2_1_8_1","doi-asserted-by":"publisher","DOI":"10.1109\/RTAS.2010.40"},{"key":"e_1_3_2_1_9_1","doi-asserted-by":"publisher","DOI":"10.1147\/rd.524.0439"},{"key":"e_1_3_2_1_10_1","unstructured":"HP Labs. CACTI: an integrated cache and memory access time cycle time area leakage and dynamic power model. http:\/\/www.hpl.hp.com\/research\/cacti\/.  HP Labs. CACTI: an integrated cache and memory access time cycle time area leakage and dynamic power model. http:\/\/www.hpl.hp.com\/research\/cacti\/."},{"key":"e_1_3_2_1_11_1","volume-title":"Proceedings of IEEE ISSCC","author":"Jung H.","year":"2011","unstructured":"H. Jung and et al. A 58nm 1.8v 1Gb PRAM with 6.4MB\/s program BW . In Proceedings of IEEE ISSCC 2011 . H. Jung and et al. A 58nm 1.8v 1Gb PRAM with 6.4MB\/s program BW. In Proceedings of IEEE ISSCC 2011."},{"key":"e_1_3_2_1_12_1","first-page":"487","volume-title":"Proceedings of the ISSCC","author":"Kang S.","year":"2006","unstructured":"S. Kang and et al. A 0.1\/spl mu\/m 1.8V 256Mb 66MHz synchronous burst PRAM . In Proceedings of the ISSCC 2006 , pages 487 -- 496 . S. Kang and et al. A 0.1\/spl mu\/m 1.8V 256Mb 66MHz synchronous burst PRAM. In Proceedings of the ISSCC 2006, pages 487 -- 496."},{"key":"e_1_3_2_1_13_1","volume-title":"Proceedings of the DSN","author":"Kong J.","year":"2010","unstructured":"J. Kong and H. Zhou . Improving privacy and lifetime of PCM-based main memory . In Proceedings of the DSN 2010 . J. Kong and H. Zhou. Improving privacy and lifetime of PCM-based main memory. In Proceedings of the DSN 2010."},{"key":"e_1_3_2_1_14_1","doi-asserted-by":"publisher","DOI":"10.1145\/1555754.1555758"},{"key":"e_1_3_2_1_15_1","doi-asserted-by":"publisher","DOI":"10.1109\/2.982916"},{"key":"e_1_3_2_1_16_1","doi-asserted-by":"publisher","DOI":"10.1145\/1555754.1555760"},{"key":"e_1_3_2_1_17_1","unstructured":"Samsung Electronics. DDR2 registered SDRAM module M393T5160QZA. Datasheet.  Samsung Electronics. DDR2 registered SDRAM module M393T5160QZA. Datasheet."},{"key":"e_1_3_2_1_18_1","doi-asserted-by":"publisher","DOI":"10.5555\/1950815.1950867"},{"key":"e_1_3_2_1_19_1","doi-asserted-by":"publisher","DOI":"10.1145\/360128.360154"},{"key":"e_1_3_2_1_20_1","doi-asserted-by":"publisher","DOI":"10.1145\/1669112.1669116"},{"key":"e_1_3_2_1_21_1","doi-asserted-by":"publisher","DOI":"10.1145\/1555754.1555759"}],"event":{"name":"GLSVLSI '12: Great Lakes Symposium on VLSI 2012","location":"Salt Lake City Utah USA","acronym":"GLSVLSI '12","sponsor":["SIGDA ACM Special Interest Group on Design Automation","IEEE CEDA","IEEE CASS"]},"container-title":["Proceedings of the great lakes symposium on VLSI"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/2206781.2206865","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/2206781.2206865","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T09:20:54Z","timestamp":1750238454000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/2206781.2206865"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2012,5,3]]},"references-count":20,"alternative-id":["10.1145\/2206781.2206865","10.1145\/2206781"],"URL":"https:\/\/doi.org\/10.1145\/2206781.2206865","relation":{},"subject":[],"published":{"date-parts":[[2012,5,3]]},"assertion":[{"value":"2012-05-03","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}