{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,24]],"date-time":"2025-06-24T06:27:28Z","timestamp":1750746448281,"version":"3.41.0"},"publisher-location":"New York, NY, USA","reference-count":25,"publisher":"ACM","license":[{"start":{"date-parts":[[2013,5,29]],"date-time":"2013-05-29T00:00:00Z","timestamp":1369785600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2013,5,29]]},"DOI":"10.1145\/2463209.2488824","type":"proceedings-article","created":{"date-parts":[[2013,5,28]],"date-time":"2013-05-28T16:35:41Z","timestamp":1369758941000},"page":"1-6","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":36,"title":["On effective and efficient in-field TSV repair for stacked 3D ICs"],"prefix":"10.1145","author":[{"given":"Li","family":"Jiang","sequence":"first","affiliation":[{"name":"The Chinese University of Hong Kong, Shatin, N.T., Hong Kong"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fangming","family":"Ye","sequence":"additional","affiliation":[{"name":"Duke University, Durham, NC"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qiang","family":"Xu","sequence":"additional","affiliation":[{"name":"The Chinese University of Hong Kong, Shatin, N.T., Hong Kong"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Krishnendu","family":"Chakrabarty","sequence":"additional","affiliation":[{"name":"Duke University, Durham, NC"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bill","family":"Eklow","sequence":"additional","affiliation":[{"name":"Cisco Systems, San Jose, CA"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"320","published-online":{"date-parts":[[2013,5,29]]},"reference":[{"key":"e_1_3_2_1_1_1","unstructured":"International Technology Roadmap for Semiconductors (ITRS'11) available at http:\/\/www.itrs.net\/.  International Technology Roadmap for Semiconductors (ITRS'11) available at http:\/\/www.itrs.net\/."},{"key":"e_1_3_2_1_2_1","doi-asserted-by":"publisher","DOI":"10.1109\/ASPDAC.2012.6165055"},{"key":"e_1_3_2_1_3_1","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2009.5173329"},{"key":"e_1_3_2_1_4_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2010.09.031"},{"key":"e_1_3_2_1_5_1","volume-title":"Proc. IEEE International Conference on IC Design and Technology","author":"Dao T.","year":"2009","unstructured":"T. Dao , D. Triyoso , M. Petras , and M. Canonico . Through silicon via stress characterization . In Proc. IEEE International Conference on IC Design and Technology , 2009 . T. Dao, D. Triyoso, M. Petras, and M. Canonico. Through silicon via stress characterization. In Proc. IEEE International Conference on IC Design and Technology, 2009."},{"key":"e_1_3_2_1_6_1","first-page":"1073","volume-title":"Proc. IEEE Electronic Components and Technology Conference","author":"Selvanayagam C.","year":"2008","unstructured":"C. Selvanayagam , J. Lau , X. Zhang , S. Seah , K. Vaidyanathan , and T. C. Chai Nonlinear thermal stress\/strain analysis of copper filled TSV and their flip-chip micro-bumps . In Proc. IEEE Electronic Components and Technology Conference , pages 1073 -- 1081 , 2008 . C. Selvanayagam, J. Lau, X. Zhang, S. Seah, K. Vaidyanathan, and T. C. Chai Nonlinear thermal stress\/strain analysis of copper filled TSV and their flip-chip micro-bumps. In Proc. IEEE Electronic Components and Technology Conference, pages 1073--1081, 2008."},{"key":"e_1_3_2_1_7_1","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2010.2068572"},{"key":"e_1_3_2_1_8_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2010.07.024"},{"key":"e_1_3_2_1_9_1","first-page":"3F","volume-title":"Proc. IEEE International Reliability Physics Symposium","author":"Frank T.","unstructured":"T. Frank , C. Chappaz , P. Leduc , L. Arnaud , F. Lorut , S. Moreau , A. Thuaire , R. El Farhane , and L. Anghel . Resistance increase due to electromigration induced depletion under TSV . In Proc. IEEE International Reliability Physics Symposium , pages 3F .4.1--3F.4.6, 2011. T. Frank, C. Chappaz, P. Leduc, L. Arnaud, F. Lorut, S. Moreau, A. Thuaire, R. El Farhane, and L. Anghel. Resistance increase due to electromigration induced depletion under TSV. In Proc. IEEE International Reliability Physics Symposium, pages 3F.4.1--3F.4.6, 2011."},{"key":"e_1_3_2_1_10_1","first-page":"166","volume-title":"Proc. Design, Automation, and Test in Europe Conference Exhibition","author":"Hsieh A.","year":"2010","unstructured":"A. Hsieh , T. Hwang , M. Chang , M. Tsai , C. Tseng , and H.-C. Li . TSV redundancy : Architecture and design issues in 3D IC . In Proc. Design, Automation, and Test in Europe Conference Exhibition , pages 166 -- 171 , march 2010 . A. Hsieh, T. Hwang, M. Chang, M. Tsai, C. Tseng, and H.-C. Li. TSV redundancy: Architecture and design issues in 3D IC. In Proc. Design, Automation, and Test in Europe Conference Exhibition, pages 166--171, march 2010."},{"key":"e_1_3_2_1_11_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2009.2034408"},{"key":"e_1_3_2_1_12_1","doi-asserted-by":"publisher","DOI":"10.5555\/1509456.1509589"},{"key":"e_1_3_2_1_13_1","doi-asserted-by":"publisher","DOI":"10.1109\/IOLTS.2012.6313847"},{"key":"e_1_3_2_1_14_1","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2012.2198475"},{"key":"e_1_3_2_1_15_1","doi-asserted-by":"publisher","DOI":"10.1109\/ATS.2011.37"},{"key":"e_1_3_2_1_16_1","doi-asserted-by":"publisher","DOI":"10.1109\/ASPDAC.2012.6165053"},{"key":"e_1_3_2_1_17_1","doi-asserted-by":"publisher","DOI":"10.1145\/2228360.2228545"},{"key":"e_1_3_2_1_18_1","doi-asserted-by":"publisher","DOI":"10.5555\/2492708.2492905"},{"key":"e_1_3_2_1_19_1","doi-asserted-by":"publisher","DOI":"10.5555\/2133429.2133477"},{"key":"e_1_3_2_1_20_1","article-title":"On effective TSV repair for 3D-stacked ICs","author":"Jiang L.","unstructured":"L. Jiang , Q. Xu , and B. Eklow . On effective TSV repair for 3D-stacked ICs . IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, to appear. L. Jiang, Q. Xu, and B. Eklow. On effective TSV repair for 3D-stacked ICs. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, to appear.","journal-title":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, to appear."},{"key":"e_1_3_2_1_21_1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2074070"},{"key":"e_1_3_2_1_22_1","doi-asserted-by":"publisher","DOI":"10.1145\/1403375.1403590"},{"key":"e_1_3_2_1_23_1","first-page":"20","volume-title":"Proc. IEEE VLSI Test Symposium (VTS)","year":"2011","unstructured":"Huang, Yu-Jen, A built-in self-test scheme for the post-bond test of TSVs in 3D ICs . In Proc. IEEE VLSI Test Symposium (VTS) , pages 20 -- 25 , 2011 . Huang, Yu-Jen, et al. A built-in self-test scheme for the post-bond test of TSVs in 3D ICs. In Proc. IEEE VLSI Test Symposium (VTS), pages 20--25, 2011."},{"key":"e_1_3_2_1_24_1","doi-asserted-by":"publisher","DOI":"10.1016\/0304-3975(80)90009-2"},{"key":"e_1_3_2_1_25_1","series-title":"9","first-page":"842","volume-title":"National Academy of Sciences of the United States of America","author":"Berge C.","year":"1957","unstructured":"C. Berge . Two theorems in graph theory. In National Academy of Sciences of the United States of America , volume 43 of 9 , pages 842 -- 844 , 1957 . C. Berge. Two theorems in graph theory. In National Academy of Sciences of the United States of America, volume 43 of 9, pages 842--844, 1957."}],"event":{"name":"DAC '13: The 50th Annual Design Automation Conference 2013","sponsor":["EDAC Electronic Design Automation Consortium","SIGDA ACM Special Interest Group on Design Automation","IEEE-CEDA","SIGBED ACM Special Interest Group on Embedded Systems"],"location":"Austin Texas","acronym":"DAC '13"},"container-title":["Proceedings of the 50th Annual Design Automation Conference"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/2463209.2488824","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/2463209.2488824","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T08:39:29Z","timestamp":1750235969000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/2463209.2488824"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,5,29]]},"references-count":25,"alternative-id":["10.1145\/2463209.2488824","10.1145\/2463209"],"URL":"https:\/\/doi.org\/10.1145\/2463209.2488824","relation":{},"subject":[],"published":{"date-parts":[[2013,5,29]]},"assertion":[{"value":"2013-05-29","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}