{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,22]],"date-time":"2026-03-22T06:03:32Z","timestamp":1774159412797,"version":"3.50.1"},"publisher-location":"New York, NY, USA","reference-count":19,"publisher":"ACM","license":[{"start":{"date-parts":[[2013,5,29]],"date-time":"2013-05-29T00:00:00Z","timestamp":1369785600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2013,5,29]]},"DOI":"10.1145\/2463209.2488868","type":"proceedings-article","created":{"date-parts":[[2013,5,28]],"date-time":"2013-05-28T16:35:41Z","timestamp":1369758941000},"page":"1-6","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":68,"title":["Exploring tunnel-FET for ultra low power analog applications"],"prefix":"10.1145","author":[{"given":"Amit Ranjan","family":"Trivedi","sequence":"first","affiliation":[{"name":"Georgia Institute of Technology, Atlanta, GA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sergio","family":"Carlo","sequence":"additional","affiliation":[{"name":"Georgia Institute of Technology, Atlanta, GA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Saibal","family":"Mukhopadhyay","sequence":"additional","affiliation":[{"name":"Georgia Institute of Technology, Atlanta, GA"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"320","published-online":{"date-parts":[[2013,5,29]]},"reference":[{"key":"e_1_3_2_1_1_1","doi-asserted-by":"crossref","unstructured":"Bardon M. Neves H. Puers R. and Van C. 2010. Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junction Depletion Regions. In IEEE TED.  Bardon M. Neves H. Puers R. and Van C. 2010. Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junction Depletion Regions. In IEEE TED .","DOI":"10.1109\/TED.2010.2040661"},{"key":"e_1_3_2_1_3_1","doi-asserted-by":"crossref","unstructured":"Bhuwalka K. Schule J. and Eisele I. 2005. A Simulation Approach to Optimize the Electrical Parameters of a Vertical Tunnel FET. In IEEE TED.  Bhuwalka K. Schule J. and Eisele I. 2005. A Simulation Approach to Optimize the Electrical Parameters of a Vertical Tunnel FET. In IEEE TED .","DOI":"10.1109\/TED.2005.850618"},{"key":"e_1_3_2_1_4_1","volume-title":"Flicker Noise Characterization and Analytical Modeling of Homo and Hetero-Junction III-V Tunnel FETs. In Device Research Conference.","author":"Bijesh R.","unstructured":"Bijesh , R. , Mohata , D. , Liu , H. , and Dutta , S . 2012 . Flicker Noise Characterization and Analytical Modeling of Homo and Hetero-Junction III-V Tunnel FETs. In Device Research Conference. Bijesh, R., Mohata, D., Liu, H., and Dutta, S. 2012. Flicker Noise Characterization and Analytical Modeling of Homo and Hetero-Junction III-V Tunnel FETs. In Device Research Conference."},{"key":"e_1_3_2_1_5_1","unstructured":"Colibrys corp. \"http:\/\/www.colibrys.com\/e\/page\/183\/\".  Colibrys corp. \"http:\/\/www.colibrys.com\/e\/page\/183\/\"."},{"key":"e_1_3_2_1_6_1","doi-asserted-by":"crossref","unstructured":"Gandhi R. Chen Z. Singh N. and Banerjee K. 2011. CMOS-Compatible Verticle-Silicon-Nanowire Gate-All-around p-Type Tunneling FETs with \u2264 50mV\/decade Subthreshold Swing. In IEEE EDL.  Gandhi R. Chen Z. Singh N. and Banerjee K. 2011. CMOS-Compatible Verticle-Silicon-Nanowire Gate-All-around p-Type Tunneling FETs with \u2264 50mV\/decade Subthreshold Swing. In IEEE EDL .","DOI":"10.1109\/LED.2011.2165331"},{"key":"e_1_3_2_1_7_1","doi-asserted-by":"crossref","unstructured":"Harrison R. and Charles T.. 2003. A Low-Power Low-Noise CMOS Amplifier for Neural Recording Applications. In IEEE JSSC.  Harrison R. and Charles T.. 2003. A Low-Power Low-Noise CMOS Amplifier for Neural Recording Applications. In IEEE JSSC .","DOI":"10.1109\/JSSC.2003.811979"},{"key":"e_1_3_2_1_8_1","unstructured":"Hori S. Maeda T. Matsuno N. and Hida H. 2004. Low-power widely tunable Gm-C filter with an adaptive DC-blocking triode-biased MOSFET transconductor. In IEEE JSSC.  Hori S. Maeda T. Matsuno N. and Hida H. 2004. Low-power widely tunable Gm-C filter with an adaptive DC-blocking triode-biased MOSFET transconductor. In IEEE JSSC ."},{"key":"e_1_3_2_1_9_1","doi-asserted-by":"crossref","unstructured":"Ionescu et al. 2011. Ultra low power: emerging devices and their benefits for Integrated Circuits. In IEEE IEDM.  Ionescu et al. 2011. Ultra low power: emerging devices and their benefits for Integrated Circuits. In IEEE IEDM .","DOI":"10.1109\/IEDM.2011.6131563"},{"key":"e_1_3_2_1_10_1","doi-asserted-by":"crossref","unstructured":"Javey A. Guo J. Wang Q. Lundstrom M. and Dai H. 2003. Ballistic carbon nanotube field-effect transistor. In Nature.  Javey A. Guo J. Wang Q. Lundstrom M. and Dai H. 2003. Ballistic carbon nanotube field-effect transistor. In Nature .","DOI":"10.1038\/nature01797"},{"key":"e_1_3_2_1_11_1","doi-asserted-by":"crossref","unstructured":"Kim et al. 2008. Noise Properties of Coherent Tunneling Processes in Resonant Interband Tunneling Diode. In Journal of Korean Physical Society.  Kim et al. 2008. Noise Properties of Coherent Tunneling Processes in Resonant Interband Tunneling Diode. In Journal of Korean Physical Society .","DOI":"10.3938\/jkps.53.2002"},{"key":"e_1_3_2_1_12_1","doi-asserted-by":"crossref","unstructured":"Mookerjea et al. 2009. Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications. In IEEE IEDM.  Mookerjea et al. 2009. Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications. In IEEE IEDM .","DOI":"10.1109\/IEDM.2009.5424355"},{"key":"e_1_3_2_1_13_1","doi-asserted-by":"crossref","unstructured":"S\u00e1nchez-Sinencio E. Ramirez-Angulo J. Linares B. and Rodriguez A. 1989. Operational transconductance amplifier-based nonlinear function syntheses. In IEEE JSSC.  S\u00e1nchez-Sinencio E. Ramirez-Angulo J. Linares B. and Rodriguez A. 1989. Operational transconductance amplifier-based nonlinear function syntheses. In IEEE JSSC .","DOI":"10.1109\/4.44993"},{"key":"e_1_3_2_1_14_1","unstructured":"Synopsys TCAD http:\/\/www.synopsys.com.  Synopsys TCAD http:\/\/www.synopsys.com."},{"key":"e_1_3_2_1_15_1","doi-asserted-by":"crossref","unstructured":"Vandenberghe et al. 2008. Analytical Model for a Tunnel Field-Effect Transistor. In IEEE TED.  Vandenberghe et al. 2008. Analytical Model for a Tunnel Field-Effect Transistor. In IEEE TED .","DOI":"10.1109\/MELCON.2008.4618555"},{"key":"e_1_3_2_1_16_1","doi-asserted-by":"crossref","unstructured":"Verma N. and Chandrakasan A. 2007. An Ultra Low Energy 12-bit Rate-resolution Scalable SAR ADC for Wireless Sensor Nodes. In IEEE JSSC.  Verma N. and Chandrakasan A. 2007. An Ultra Low Energy 12-bit Rate-resolution Scalable SAR ADC for Wireless Sensor Nodes. In IEEE JSSC .","DOI":"10.1109\/JSSC.2007.897157"},{"key":"e_1_3_2_1_17_1","doi-asserted-by":"crossref","unstructured":"Wan J. Le Royer C. Zaslavsky A. Cr\u00edstoloveanu S. 2010. Low-frequency noise behavior of tunneling field effect transistors. In Applied Physics Letters.  Wan J. Le Royer C. Zaslavsky A. Cr\u00edstoloveanu S. 2010. Low-frequency noise behavior of tunneling field effect transistors. In Applied Physics Letters .","DOI":"10.1063\/1.3526722"},{"key":"e_1_3_2_1_18_1","doi-asserted-by":"publisher","DOI":"10.1109\/92.678895"},{"key":"e_1_3_2_1_19_1","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2002.1015057"},{"key":"e_1_3_2_1_20_1","doi-asserted-by":"crossref","unstructured":"Zierhofer et al. 1995. Electronic Design of a Cochlear Implant for Multichannel High-Rate Pulsatile Stimulation Strategies. In IEEE Transaction on Rehabilitation Engineering.  Zierhofer et al. 1995. Electronic Design of a Cochlear Implant for Multichannel High-Rate Pulsatile Stimulation Strategies. In IEEE Transaction on Rehabilitation Engineering .","DOI":"10.1109\/86.372900"}],"event":{"name":"DAC '13: The 50th Annual Design Automation Conference 2013","location":"Austin Texas","acronym":"DAC '13","sponsor":["EDAC Electronic Design Automation Consortium","SIGDA ACM Special Interest Group on Design Automation","IEEE-CEDA","SIGBED ACM Special Interest Group on Embedded Systems"]},"container-title":["Proceedings of the 50th Annual Design Automation Conference"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/2463209.2488868","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/2463209.2488868","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T08:39:38Z","timestamp":1750235978000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/2463209.2488868"}},"subtitle":["a case study on operational transconductance amplifier"],"short-title":[],"issued":{"date-parts":[[2013,5,29]]},"references-count":19,"alternative-id":["10.1145\/2463209.2488868","10.1145\/2463209"],"URL":"https:\/\/doi.org\/10.1145\/2463209.2488868","relation":{},"subject":[],"published":{"date-parts":[[2013,5,29]]},"assertion":[{"value":"2013-05-29","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}