{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T06:40:10Z","timestamp":1750228810049,"version":"3.41.0"},"publisher-location":"New York, NY, USA","reference-count":37,"publisher":"ACM","license":[{"start":{"date-parts":[[2015,6,7]],"date-time":"2015-06-07T00:00:00Z","timestamp":1433635200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.acm.org\/publications\/policies\/copyright_policy#Background"}],"funder":[{"DOI":"10.13039\/100006445","name":"National Science Foundation","doi-asserted-by":"publisher","award":["CCF 07-46608"],"award-info":[{"award-number":["CCF 07-46608"]}],"id":[{"id":"10.13039\/100006445","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["dl.acm.org"],"crossmark-restriction":true},"short-container-title":[],"published-print":{"date-parts":[[2015,6,7]]},"DOI":"10.1145\/2744769.2744782","type":"proceedings-article","created":{"date-parts":[[2015,6,2]],"date-time":"2015-06-02T05:35:02Z","timestamp":1433223302000},"page":"1-6","update-policy":"https:\/\/doi.org\/10.1145\/crossmark-policy","source":"Crossref","is-referenced-by-count":4,"title":["A SPICE model of flexible transition metal dichalcogenide field-effect transistors"],"prefix":"10.1145","author":[{"given":"Ying-Yu","family":"Chen","sequence":"first","affiliation":[{"name":"University of Illinois at Urbana-Champaign, IL"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zelei","family":"Sun","sequence":"additional","affiliation":[{"name":"University of Illinois at Urbana-Champaign, IL"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Deming","family":"Chen","sequence":"additional","affiliation":[{"name":"University of Illinois at Urbana-Champaign, IL"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"320","published-online":{"date-parts":[[2015,6,7]]},"reference":[{"key":"e_1_3_2_1_1_1","author":"Song X.","year":"2013","unstructured":"X. Song , J. Hu , and H. Zeng , \"Two-dimensional semiconductors: recent progress and future perspectives,\" J. Mater. Chem. C , 2013 . X. Song, J. Hu, and H. Zeng, \"Two-dimensional semiconductors: recent progress and future perspectives,\" J. Mater. Chem. C, 2013.","journal-title":"\"Two-dimensional semiconductors: recent progress and future perspectives,\" J. Mater. Chem."},{"key":"e_1_3_2_1_2_1","author":"Fang T.","year":"2008","unstructured":"T. Fang , A. Konar , H. Xing , and D. Jena , \"Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering,\" Phys. Rev. B , 2008 . T. Fang, A. Konar, H. Xing, and D. Jena, \"Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering,\" Phys. Rev. B, 2008.","journal-title":"Rev. B"},{"key":"e_1_3_2_1_3_1","volume-title":"Effect of edge roughness in graphene nanoribbon transistors,\" Applied Physics Letters","author":"Yoon Y.","year":"2007","unstructured":"Y. Yoon and J. Guo , \" Effect of edge roughness in graphene nanoribbon transistors,\" Applied Physics Letters , 2007 . Y. Yoon and J. Guo, \"Effect of edge roughness in graphene nanoribbon transistors,\" Applied Physics Letters, 2007."},{"key":"e_1_3_2_1_4_1","volume-title":"Graphene nano-ribbon field-effect transistors as future low-power devices,\" in IEEE International Symposium on Low Power Electronics and Design","author":"Chen Y.-Y.","year":"2013","unstructured":"Y.-Y. Chen , A. Sangai , M. Gholipour , and D. Chen , \" Graphene nano-ribbon field-effect transistors as future low-power devices,\" in IEEE International Symposium on Low Power Electronics and Design , 2013 . Y.-Y. Chen, A. Sangai, M. Gholipour, and D. 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Chen , \" Highly accurate SPICE-compatible modeling for single- and double-gate GNRFETs with studies on technology scaling,\" in Design , Automation and Test in Europe , 2014 . M. Gholipour, Y.-Y. Chen, A. Sangai, and D. Chen, \"Highly accurate SPICE-compatible modeling for single- and double-gate GNRFETs with studies on technology scaling,\" in Design, Automation and Test in Europe, 2014."},{"key":"e_1_3_2_1_7_1","volume-title":"Sangai et al., \"Analytical SPICE-compatible model of Schottky-barrier-type GNRFETs with performance analysis,\" IEEE Tran. on Very Large Scale Integration Systems","author":"Gholipour M.","year":"2015","unstructured":"M. Gholipour , Y.-Y. Chen , A. Sangai et al., \"Analytical SPICE-compatible model of Schottky-barrier-type GNRFETs with performance analysis,\" IEEE Tran. on Very Large Scale Integration Systems , 2015 . M. Gholipour, Y.-Y. Chen, A. Sangai et al., \"Analytical SPICE-compatible model of Schottky-barrier-type GNRFETs with performance analysis,\" IEEE Tran. on Very Large Scale Integration Systems, 2015."},{"key":"e_1_3_2_1_8_1","doi-asserted-by":"crossref","unstructured":"Y.-Y. Chen A. Sangai A. Rogachev et al. \"A SPICE-compatible model of MOS-type graphene nano-ribbon field-effect transistors enabling circuit-level delay and power analysis under process variation \" in IEEE Tran. on Nanotechnology 2015 (to appear).  Y.-Y. Chen A. Sangai A. Rogachev et al. \"A SPICE-compatible model of MOS-type graphene nano-ribbon field-effect transistors enabling circuit-level delay and power analysis under process variation \" in IEEE Tran. on Nanotechnology 2015 (to appear).","DOI":"10.1109\/TNANO.2015.2469647"},{"key":"e_1_3_2_1_9_1","volume-title":"Monolayer MoS2 transistors beyond the technology road map,\" IEEE Tran. on Electron Devices","author":"Alam K.","year":"2012","unstructured":"K. Alam and R. Lake , \" Monolayer MoS2 transistors beyond the technology road map,\" IEEE Tran. on Electron Devices , 2012 . K. Alam and R. Lake, \"Monolayer MoS2 transistors beyond the technology road map,\" IEEE Tran. on Electron Devices, 2012."},{"key":"e_1_3_2_1_10_1","volume-title":"Liu et al., \"A computational study of metal-contacts to beyond-graphene 2d semiconductor materials,\" in IEEE International Electron Devices Meeting","author":"Kang J.","year":"2012","unstructured":"J. Kang , D. Sarkar , W. Liu et al., \"A computational study of metal-contacts to beyond-graphene 2d semiconductor materials,\" in IEEE International Electron Devices Meeting , 2012 . J. Kang, D. Sarkar, W. Liu et al., \"A computational study of metal-contacts to beyond-graphene 2d semiconductor materials,\" in IEEE International Electron Devices Meeting, 2012."},{"key":"e_1_3_2_1_11_1","author":"Yoon Y.","year":"2011","unstructured":"Y. Yoon , K. Ganapathi , and S. Salahuddin , \"How good can monolayer MoS2 transistors be? \" Nano Letters , 2011 . Y. Yoon, K. Ganapathi, and S. Salahuddin, \"How good can monolayer MoS2 transistors be?\" Nano Letters, 2011.","journal-title":"\" Nano Letters"},{"key":"e_1_3_2_1_12_1","volume-title":"Lee et al., \"High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems,\" ACS Nano","author":"Chang H.-Y.","year":"2013","unstructured":"H.-Y. Chang , S. Yang , J. Lee et al., \"High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems,\" ACS Nano , 2013 . H.-Y. Chang, S. Yang, J. Lee et al., \"High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems,\" ACS Nano, 2013."},{"key":"e_1_3_2_1_13_1","author":"Pu J.","year":"2012","unstructured":"J. Pu , Y. Yomogida , K.-K. Liu Lett. , 2012 . J. Pu, Y. Yomogida, K.-K. Liu et al., \"Highly flexible MoS2 thin-film transistors with ion gel dielectrics,\" Nano Lett., 2012.","journal-title":"Lett."},{"key":"e_1_3_2_1_14_1","volume-title":"Bae et al., \"Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes,\" Small","author":"Yoon J.","year":"2013","unstructured":"J. Yoon , W. Park , G.- Y. Bae et al., \"Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes,\" Small , 2013 . J. Yoon, W. Park, G.-Y. Bae et al., \"Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes,\" Small, 2013."},{"key":"e_1_3_2_1_15_1","volume-title":"Cui et al., \"Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,\" ACS Nano","author":"Lee G.-H.","year":"2013","unstructured":"G.-H. Lee , Y.-J. Yu , X. Cui et al., \"Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,\" ACS Nano , 2013 . G.-H. Lee, Y.-J. Yu, X. Cui et al., \"Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures,\" ACS Nano, 2013."},{"key":"e_1_3_2_1_16_1","volume-title":"Yin et al., \"Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,\" Small","author":"He Q.","year":"2012","unstructured":"Q. He , Z. Zeng , Z. Yin et al., \"Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,\" Small , 2012 . Q. He, Z. Zeng, Z. Yin et al., \"Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications,\" Small, 2012."},{"key":"e_1_3_2_1_17_1","volume-title":"Brivio et al., \"Single-layer MoS2 transistors,\" Nature Nano","author":"Radisavljevic B.","year":"2011","unstructured":"B. Radisavljevic , A. Radenovic , J. Brivio et al., \"Single-layer MoS2 transistors,\" Nature Nano , 2011 . B. Radisavljevic, A. Radenovic, J. Brivio et al., \"Single-layer MoS2 transistors,\" Nature Nano, 2011."},{"key":"e_1_3_2_1_18_1","volume-title":"High performance multilayer MoS2 transistors with scandium contacts,\" Nano Letters","author":"Das S.","year":"2013","unstructured":"S. Das , H.-Y. Chen , A. V. Penumatcha , and J. Appenzeller , \" High performance multilayer MoS2 transistors with scandium contacts,\" Nano Letters , 2013 . S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, \"High performance multilayer MoS2 transistors with scandium contacts,\" Nano Letters, 2013."},{"key":"e_1_3_2_1_19_1","volume-title":"Lee et al., \"Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition,\" Nature Communications","author":"Zhu W.","year":"2014","unstructured":"W. Zhu , T. Low , Y.- H. Lee et al., \"Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition,\" Nature Communications , 2014 . W. Zhu, T. Low, Y.-H. Lee et al., \"Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition,\" Nature Communications, 2014."},{"key":"e_1_3_2_1_20_1","volume-title":"Chang et al., \"High-performance single layered wse2 p-fets with chemically doped contacts,\" Nano Letters","author":"Fang H.","year":"2012","unstructured":"H. Fang , S. Chuang , T. C. Chang et al., \"High-performance single layered wse2 p-fets with chemically doped contacts,\" Nano Letters , 2012 . H. Fang, S. Chuang, T. C. Chang et al., \"High-performance single layered wse2 p-fets with chemically doped contacts,\" Nano Letters, 2012."},{"key":"e_1_3_2_1_21_1","volume-title":"Lee et al., \"Integrated circuits based on bilayer MoS2 transistors,\" Nano Letters","author":"Wang H.","year":"2012","unstructured":"H. Wang , L. Yu , Y.- H. Lee et al., \"Integrated circuits based on bilayer MoS2 transistors,\" Nano Letters , 2012 . H. Wang, L. Yu, Y.-H. Lee et al., \"Integrated circuits based on bilayer MoS2 transistors,\" Nano Letters, 2012."},{"key":"e_1_3_2_1_22_1","volume-title":"Integrated circuits and logic operations based on single-layer MoS2,\" ACS Nano","author":"Radisavljevic B.","year":"2011","unstructured":"B. Radisavljevic , M. B. Whitwick , and A. Kis , \" Integrated circuits and logic operations based on single-layer MoS2,\" ACS Nano , 2011 . B. Radisavljevic, M. B. Whitwick, and A. Kis, \"Integrated circuits and logic operations based on single-layer MoS2,\" ACS Nano, 2011."},{"key":"e_1_3_2_1_23_1","volume-title":"Atomistic full-band simulations of monolayer MoS2 transistors,\" Applied Physics Letters","author":"Chang J.","year":"2013","unstructured":"J. Chang , L. F. Register , and S. K. Banerjee , \" Atomistic full-band simulations of monolayer MoS2 transistors,\" Applied Physics Letters , 2013 . J. Chang, L. F. Register, and S. K. Banerjee, \"Atomistic full-band simulations of monolayer MoS2 transistors,\" Applied Physics Letters, 2013."},{"key":"e_1_3_2_1_24_1","volume-title":"W","author":"Chang J.","year":"2014","unstructured":"J. Chang , L. F. Register , and S. K. Banerjee , \" Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo , W ; X = S, Se, Te) metal-oxide-semiconductor field effect transistors,\" Journal of Applied Physics , 2014 . J. Chang, L. F. Register, and S. K. Banerjee, \"Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors,\" Journal of Applied Physics, 2014."},{"key":"e_1_3_2_1_25_1","volume-title":"Single layer MoS2 band structure and transport,\" in International Semiconductor Device Research Symposium","author":"Salmani-Jelodar M.","year":"2011","unstructured":"M. Salmani-Jelodar , Y. Tan , and G. Klimeck , \" Single layer MoS2 band structure and transport,\" in International Semiconductor Device Research Symposium , 2011 . M. Salmani-Jelodar, Y. Tan, and G. Klimeck, \"Single layer MoS2 band structure and transport,\" in International Semiconductor Device Research Symposium, 2011."},{"key":"e_1_3_2_1_26_1","doi-asserted-by":"crossref","unstructured":"D. Jim\u00e9nez \"Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors \" Applied Physics Letters 2012.  D. Jim\u00e9nez \"Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors \" Applied Physics Letters 2012.","DOI":"10.1063\/1.4770313"},{"key":"e_1_3_2_1_27_1","author":"Yun W. S.","year":"2012","unstructured":"W. S. Yun , S. W. Han , S. C. Hong M = Mo , W; X = S, Se, Te),\" Phys. Rev. B , 2012 . W. S. Yun, S. W. Han, S. C. Hong et al., \"Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2h-MX2 semiconductors (M = Mo, W; X = S, Se, Te),\" Phys. Rev. B, 2012.","journal-title":"Phys. Rev. B"},{"key":"e_1_3_2_1_28_1","volume-title":"Schedin et al., \"Two-dimensional atomic crystals,\" Proceedings of the National Academy of Sciences of the United States of America","author":"Novoselov K. S.","year":"2005","unstructured":"K. S. Novoselov , D. Jiang , F. Schedin et al., \"Two-dimensional atomic crystals,\" Proceedings of the National Academy of Sciences of the United States of America , 2005 . K. S. Novoselov, D. Jiang, F. Schedin et al., \"Two-dimensional atomic crystals,\" Proceedings of the National Academy of Sciences of the United States of America, 2005."},{"key":"e_1_3_2_1_29_1","volume-title":"Ziegler et al., \"Bandgap engineering of strained monolayer and bilayer MoS2,\" Nano Letters","author":"Conley H. J.","year":"2013","unstructured":"H. J. Conley , B. Wang , J. I. Ziegler et al., \"Bandgap engineering of strained monolayer and bilayer MoS2,\" Nano Letters , 2013 . H. J. Conley, B. Wang, J. I. Ziegler et al., \"Bandgap engineering of strained monolayer and bilayer MoS2,\" Nano Letters, 2013."},{"key":"e_1_3_2_1_30_1","volume-title":"Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains,\" ACS Nano","author":"Johari P.","year":"2012","unstructured":"P. Johari and V. B. Shenoy , \" Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains,\" ACS Nano , 2012 . P. Johari and V. B. Shenoy, \"Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains,\" ACS Nano, 2012."},{"key":"e_1_3_2_1_31_1","volume-title":"Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2,\" Nano Letters","author":"He K.","year":"2013","unstructured":"K. He , C. Poole , K. F. Mak , and J. Shan , \" Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2,\" Nano Letters , 2013 . K. He, C. Poole, K. F. Mak, and J. Shan, \"Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2,\" Nano Letters, 2013."},{"key":"e_1_3_2_1_32_1","volume-title":"Channel length scaling of MoS2 mosfets,\" ACS Nano","author":"Liu H.","year":"2012","unstructured":"H. Liu , A. T. Neal , and P. D. Ye , \" Channel length scaling of MoS2 mosfets,\" ACS Nano , 2012 . H. Liu, A. T. Neal, and P. D. Ye, \"Channel length scaling of MoS2 mosfets,\" ACS Nano, 2012."},{"key":"e_1_3_2_1_33_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.909043"},{"key":"e_1_3_2_1_34_1","volume-title":"An accurate and verilog-a compatible compact model for graphene field-effect transistors,\" IEEE Tran. on Nanotechnology","author":"Landauer G.","year":"2014","unstructured":"G. Landauer , D. Jimenez , and J. Gonzalez , \" An accurate and verilog-a compatible compact model for graphene field-effect transistors,\" IEEE Tran. on Nanotechnology , 2014 . G. Landauer, D. Jimenez, and J. Gonzalez, \"An accurate and verilog-a compatible compact model for graphene field-effect transistors,\" IEEE Tran. on Nanotechnology, 2014."},{"key":"e_1_3_2_1_35_1","volume-title":"Najmaei et al., \"Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films,\" Nano Letters","author":"Liu H.","year":"2013","unstructured":"H. Liu , M. Si , S. Najmaei et al., \"Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films,\" Nano Letters , 2013 . H. Liu, M. Si, S. Najmaei et al., \"Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films,\" Nano Letters, 2013."},{"key":"e_1_3_2_1_36_1","unstructured":"\"Predictive technology model \" http:\/\/www.ptm.asu.edu 2014.  \"Predictive technology model \" http:\/\/www.ptm.asu.edu 2014."},{"key":"e_1_3_2_1_37_1","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4614-0445-3"}],"event":{"name":"DAC '15: The 52nd Annual Design Automation Conference 2015","sponsor":["SIGDA ACM Special Interest Group on Design Automation"],"location":"San Francisco California","acronym":"DAC '15"},"container-title":["Proceedings of the 52nd Annual Design Automation Conference"],"original-title":[],"link":[{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/2744769.2744782","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/dl.acm.org\/doi\/pdf\/10.1145\/2744769.2744782","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,18]],"date-time":"2025-06-18T06:12:02Z","timestamp":1750227122000},"score":1,"resource":{"primary":{"URL":"https:\/\/dl.acm.org\/doi\/10.1145\/2744769.2744782"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,6,7]]},"references-count":37,"alternative-id":["10.1145\/2744769.2744782","10.1145\/2744769"],"URL":"https:\/\/doi.org\/10.1145\/2744769.2744782","relation":{},"subject":[],"published":{"date-parts":[[2015,6,7]]},"assertion":[{"value":"2015-06-07","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}]}}